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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK49N65W,S1F

Name: TK49N65W,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK49N65W,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK49N65W,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK49N65W,S1F.pdf

Description:: PB-F POWER MOSFET TRANSISTOR TO2

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Product details

Overview

TK49N65W,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 650 V V_DSS, 49.2 A continuous drain current, and ultra-low R_DS(ON) of 0.048 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in PFC and LLC resonant topologies.

For engineers reviewing the TK49N65W,S1F datasheet, TK49N65W,S1F pinout, TK49N65W,S1F application, or TK49N65W,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 764 mJ), gate charge (Q_g = 160 nC), thermal resistance (R_th(ch-c) = 0.313 °C/W), and TO-247 package compatibility with heatsink mounting.

Technical Context

This DTMOS™-based device uses Toshiba's proprietary super-junction structure to achieve low conduction loss while maintaining fast switching performance. Its enhancement-mode threshold voltage (V_th = 2.5–3.5 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.

Designed for hard-switched and resonant converter applications, the TK49N65W,S1F integrates robust avalanche capability (I_AR = 13 A, E_AS = 764 mJ) and high dv/dt immunity (≥50 V/ns), supporting stable operation under transient overvoltage and inductive load switching conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal AC input (85–265 VAC) rectified bus voltages with margin
R_DS(ON)	0.048 Ω (typ.) - reduces conduction loss in high-current PFC stages, improving efficiency >96%
I_D (DC)	49.2 A - enables single-device use in 1–2 kW industrial SMPS without paralleling
E_AS	764 mJ - withstands single-pulse inductive energy without failure in flyback or forward converters
Q_g	160 nC - balances switching speed and gate driver power loss in 65–100 kHz designs
R_th(ch-c)	0.313 °C/W - allows direct heatsink mounting for thermal management in compact enclosures
dv/dt immunity	≥50 V/ns - prevents false turn-on during high-slew-rate commutation in bridge configurations

Pinout & Package

TO-247 package (JEITA SC-65 / Toshiba 2-16L1A), with isolated heatsink-connected drain tab. Weight: 6.15 g (typ.). Mounting torque: 0.8 N·m.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; low Q_gs1 (40 nC) enables fast turn-on with minimal Miller effect
2 (Drain)	High-side power node	Electrically connected to heatsink; requires insulated mounting when chassis-ground referenced
3 (Source)	Power return reference	Serves as local ground for gate driver; critical for minimizing common-source inductance in high-di/dt layouts

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 0.048 Ω R_DS(ON) at 650 V - 30% lower on-resistance than planar MOSFETs in same package
Enhancement-mode gate	V_th = 2.5–3.5 V ensures clean turn-off at 0 V gate bias and avoids unintended conduction during startup
Integrated body diode	V_DSF = −1.7 V (max) and t_rr = 500 ns support synchronous rectification in LLC half-bridge outputs
Avalanche-rated design	Guaranteed single-pulse E_AS = 764 mJ eliminates need for external snubbers in clamp circuits
ESD-sensitive handling	Requires Class 1C ESD controls (≤1 kV HBM); gate oxide integrity maintained only with proper grounding protocols

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 1.5 kW active-clamp forward converter for telecom rectifiers. IC Role / Device Role / Timing Role: High-side switching element operating at 100 kHz with 50% duty cycle, handling 49 A peak current. Use Value: Low R_DS(ON) reduces conduction loss by 2.1 W vs. legacy 600 V MOSFETs, lowering heatsink size by 35%.	Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive feeding 3-phase induction motor. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–16 kHz PWM stage, leveraging avalanche ruggedness for fault tolerance. Use Value: 764 mJ E_AS rating eliminates need for external clamping diodes during short-circuit events.
EV Onboard Charger	Renewable Energy Inverter
Use Scenario: Boost switch in bidirectional OBC PFC stage interfacing 400 V battery with 230 VAC grid. IC Role / Device Role / Timing Role: Unidirectional high-side switch conducting 49.2 A DC during charging, with 650 V blocking during discharging. Use Value: 0.313 °C/W R_th(ch-c) enables direct heatsink coupling, reducing thermal interface layers and system BOM cost.	Use Scenario: DC-link switch in 5 kW string inverter converting PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Fast-switching element in interleaved boost stage operating at 65 kHz with soft switching. Use Value: 160 nC total gate charge optimizes trade-off between switching loss and gate driver dissipation in high-frequency operation.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 1.5 kW active-clamp forward converter for telecom rectifiers.

IC Role / Device Role / Timing Role: High-side switching element operating at 100 kHz with 50% duty cycle, handling 49 A peak current.

Use Value: Low R_DS(ON) reduces conduction loss by 2.1 W vs. legacy 600 V MOSFETs, lowering heatsink size by 35%.

Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive feeding 3-phase induction motor.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–16 kHz PWM stage, leveraging avalanche ruggedness for fault tolerance.

Use Value: 764 mJ E_AS rating eliminates need for external clamping diodes during short-circuit events.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Boost switch in bidirectional OBC PFC stage interfacing 400 V battery with 230 VAC grid.

IC Role / Device Role / Timing Role: Unidirectional high-side switch conducting 49.2 A DC during charging, with 650 V blocking during discharging.

Use Value: 0.313 °C/W R_th(ch-c) enables direct heatsink coupling, reducing thermal interface layers and system BOM cost.

Use Scenario: DC-link switch in 5 kW string inverter converting PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Fast-switching element in interleaved boost stage operating at 65 kHz with soft switching.

Use Value: 160 nC total gate charge optimizes trade-off between switching loss and gate driver dissipation in high-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	R_DS(ON) = 0.052 Ω, Q_g = 145 nC, TO-247 package	Lower gate charge improves switching efficiency above 120 kHz but reduced avalanche energy (E_AS = 520 mJ)	Prefer STW48N65M5 for higher-frequency PFC where gate drive loss dominates; retain TK49N65W,S1F for ruggedness-critical industrial inverters.
IXTH50N65X2	R_DS(ON) = 0.045 Ω, E_AS = 820 mJ, TO-247 package	Higher avalanche rating and lower on-resistance, but gate threshold (V_th = 3.0–4.5 V) increases risk of partial turn-on near controller V_OH	Choose IXTH50N65X2 for maximum reliability in unregulated line surges; verify gate driver high-level output ≥4.5 V before substitution.

Compared with STW48N65M5 and IXTH50N65X2, the TK49N65W,S1F offers balanced performance: its 0.048 Ω R_DS(ON) and 764 mJ E_AS suit mid-frequency (65–100 kHz) industrial SMPS where both conduction loss and fault tolerance are critical, while its 2.5–3.5 V V_th ensures compatibility with widely deployed 10 V gate drivers.

Availability

TK49N65W,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, EV onboard chargers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for TK49N65W,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO/TS 16949.

The TK49N65W,S1F belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for the TK49N65W,S1F?

The TK49N65W,S1F has a maximum continuous drain current (I_D) of 49.2 A at T_c = 25 °C. This rating assumes proper heatsinking and derating per the channel-to-case thermal resistance (R_th(ch-c) = 0.313 °C/W). At elevated case temperatures, the current must be reduced linearly to maintain T_ch ≤ 150 °C.

Does the TK49N65W,S1F have avalanche capability, and how is it specified?

Yes, the TK49N65W,S1F is fully avalanche-rated with guaranteed single-pulse avalanche energy (E_AS) of 764 mJ at T_ch = 25 °C. This is measured under standardized conditions (V_DD = 90 V, L = 8 mH, R_G = 25 Ω, I_AR = 13 A) and enables reliable operation in inductive switching circuits without external protection components.

What is the gate threshold voltage range for the TK49N65W,S1F, and why does it matter?

The TK49N65W,S1F has a gate threshold voltage (V_th) range of 2.5–3.5 V at V_DS = 10 V and I_D = 2.5 mA. This tight range ensures consistent turn-on behavior across temperature and process variation, preventing partial conduction during controller startup or noise transients - critical for stable operation in high-noise industrial environments.

Can the TK49N65W,S1F be used in place of older 600 V MOSFETs like the TK40N60U?

Yes, the TK49N65W,S1F can replace the TK40N60U in most applications due to its higher voltage rating (650 V vs. 600 V), lower R_DS(ON) (0.048 Ω vs. 0.065 Ω), and improved avalanche ruggedness. However, gate charge (160 nC vs. ~120 nC) is higher, so gate driver sizing and switching loss analysis must be re-verified for optimal performance.

Is the TK49N65W,S1F RoHS-compliant and lead-free?

Yes, the TK49N65W,S1F is RoHS-compliant and lead-free, as indicated by the underlined lot marking per Toshiba's environmental labeling convention. It meets Directive 2011/65/EU requirements, and full compliance documentation is available through Toshiba's official product change notifications and material declarations.

TK49N65W,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 49.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 24.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 400W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK49N65W,S1F FAQ

1.How can I place an order for TK49N65W,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK49N65W,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK49N65W,S1F reliable?

The price and inventory of TK49N65W,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK49N65W,S1F is usually 5 days.

3.What payment methods are accepted for TK49N65W,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK49N65W,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK49N65W,S1F?

TK49N65W,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK49N65W,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK49N65W,S1F?

For technical support, including TK49N65W,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK49N65W,S1F requirements.

6.How does Aetrix verify that TK49N65W,S1F is sourced from the original manufacturer or authorized distributors?

All TK49N65W,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK49N65W,S1F meets industry standards.

7.What is the process for return or replacement of TK49N65W,S1F?

All TK49N65W,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK49N65W,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK49N65W,S1F part is unused and in its original packaging.

Return procedure for TK49N65W,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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