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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TW027N65C,S1F

Name: TW027N65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW027N65C,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TW027N65C,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TW027N65C,S1F.pdf

Description:: G3 650V SIC-MOSFET TO-247 27MOH

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Product details

Overview

TW027N65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-efficiency switching in DC-DC converters and industrial SMPS. It delivers 650 V drain-source breakdown voltage, 27 mΩ typical R_DS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates up to 175 °C channel temperature.

For engineers reviewing the TW027N65C,S1F datasheet, TW027N65C,S1F pinout, TW027N65C,S1F application, or TW027N65C,S1F equivalent, key selection criteria include its third-generation SiC chip architecture, gate drive compatibility with 0 V/18 V logic, low Q_g (65 nC), and TO-247 package thermal performance for high-power density designs.

Technical Context

This SiC MOSFET employs a third-generation chip design featuring an integrated SiC Schottky barrier diode, enabling unidirectional reverse recovery with t_rr = 55 ns (T_c = 25 °C) and Q_rr = 358 nC. Its enhancement-mode operation requires V_GS ≥ 3.0 V to turn on, with recommended gate drive of 0 V (off) and 18 V (on).

The device supports high-frequency switching with C_iss = 2288 pF, C_oss = 249 pF, and E_oss = 23 µJ at 400 V, while maintaining robust safe operating area (SOA) up to 170 A pulsed drain current and 156 W power dissipation at T_c = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 650 V in boost PFC and isolated DC-DC topologies
R_DS(ON)	27 mΩ (typ.) at V_GS = 18 V, I_D = 29 A - Enables low conduction loss in 3–5 kW industrial power supplies
V_th	3.0–5.0 V - High threshold improves noise immunity and reduces false turn-on in noisy EMI environments
V_DSF	−1.35 V (typ.) - Low forward drop of integrated SiC body diode minimizes reverse conduction loss in synchronous rectification
Q_g	65 nC (typ.) - Supports efficient 100–500 kHz switching with moderate gate driver strength (e.g., 4.7 Ω RG)
t_rr	55 ns (T_c = 25 °C) - Fast, soft reverse recovery reduces switching stress and EMI in hard-switched converters
R_th(ch-c)	0.961 °C/W - Enables direct heatsink mounting for thermal management in compact 3U power modules

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), thermally optimized with drain-connected heatsink tab. Weight: 6.15 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives 0 V / 18 V gate drive; high input impedance enables low drive power; sensitive to ESD
2: Drain (heatsink)	High-side power terminal	Electrically and thermally connected to case; must be isolated from PCB ground plane when mounted to heatsink
3: Source	Reference and return path	Serves as signal reference for gate drive; carries full load current and reverse diode current; low-inductance layout critical

Key Features

Feature	Design Value
Integrated SiC Schottky body diode	Eliminates need for external anti-parallel diode; enables bidirectional current handling with predictable t_rr and Q_rr
Third-generation SiC chip design	Optimized cell layout and trench structure reduce R_DS(ON) × area and improve dynamic ruggedness under short-circuit conditions
High V_th range (3.0–5.0 V)	Reduces risk of spurious turn-on during dV/dt transients in high-side configurations without active Miller clamp
Low E_oss (23 µJ @ 400 V)	Minimizes turn-off energy loss in ZVS and hard-switched topologies, improving efficiency above 200 kHz
Robust SOA (170 A pulsed)	Supports overload and short-circuit withstand capability in UPS and motor drive inverters without immediate failure

Applications

Industrial Switching Power Supplies	Server & Telecom Rectifiers
Use Scenario: 3.3 kW LLC resonant converter in 1U server PSU with 48 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with ZVS. Use Value: Low R_DS(ON) and E_oss reduce conduction and switching losses, enabling >97% peak efficiency and 85 °C case temperature.	Use Scenario: Active clamp forward converter in 48 V telecom rectifier with 200 A output. IC Role / Device Role / Timing Role: Main switch controlling primary energy transfer; synchronized with clamp FET. Use Value: Integrated SiC diode eliminates external diode and reduces component count; fast t_rr prevents shoot-through during dead-time transitions.
Renewable Energy Inverters	EV Onboard Chargers
Use Scenario: DC-DC stage in solar string inverter with 1000 V PV input and 400 V battery bus. IC Role / Device Role / Timing Role: Isolated bidirectional buck-boost switch handling regenerative current. Use Value: −1.35 V V_DSF and 175 °C T_ch rating allow reliable reverse conduction and high ambient operation in rooftop enclosures.	Use Scenario: Secondary-side synchronous rectifier in 11 kW OBC with GaN primary and SiC secondary. IC Role / Device Role / Timing Role: Unidirectional freewheeling switch replacing Si diode in phase-shifted full-bridge. Use Value: 27 mΩ R_DS(ON) cuts conduction loss by 65% vs. 600 V Si MOSFET; low Q_g enables simple gate drive with minimal propagation delay.

Industrial Switching Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW LLC resonant converter in 1U server PSU with 48 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with ZVS.

Use Value: Low R_DS(ON) and E_oss reduce conduction and switching losses, enabling >97% peak efficiency and 85 °C case temperature.

Use Scenario: Active clamp forward converter in 48 V telecom rectifier with 200 A output.

IC Role / Device Role / Timing Role: Main switch controlling primary energy transfer; synchronized with clamp FET.

Use Value: Integrated SiC diode eliminates external diode and reduces component count; fast t_rr prevents shoot-through during dead-time transitions.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-DC stage in solar string inverter with 1000 V PV input and 400 V battery bus.

IC Role / Device Role / Timing Role: Isolated bidirectional buck-boost switch handling regenerative current.

Use Value: −1.35 V V_DSF and 175 °C T_ch rating allow reliable reverse conduction and high ambient operation in rooftop enclosures.

Use Scenario: Secondary-side synchronous rectifier in 11 kW OBC with GaN primary and SiC secondary.

IC Role / Device Role / Timing Role: Unidirectional freewheeling switch replacing Si diode in phase-shifted full-bridge.

Use Value: 27 mΩ R_DS(ON) cuts conduction loss by 65% vs. 600 V Si MOSFET; low Q_g enables simple gate drive with minimal propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC27N65C	R_DS(ON) = 28 mΩ (typ.), V_th = 2.5–4.5 V, no integrated diode, C_iss = 2100 pF	Requires external SiC diode; lower V_th increases risk of false turn-on in high-dV/dt layouts	Preferred where discrete diode control is needed or gate drive is limited to ≤15 V
WOLFSPEED C3M0027065K	R_DS(ON) = 27 mΩ (typ.), V_th = 2.5–4.5 V, integrated diode, Q_g = 52 nC, TO-247-3L	Lower Q_g enables faster switching but reduced gate margin; same package footprint	Selected when minimizing gate drive loss is prioritized over noise immunity in tightly controlled EMI environments

Compared with STPSC27N65C and C3M0027065K, the TW027N65C,S1F offers superior noise immunity via higher V_th, built-in diode integration, and proven thermal resistance (0.961 °C/W), making it optimal for industrial SMPS where reliability under variable line conditions is critical.

Availability

TW027N65C,S1F is available at Aetrix Electronics and suitable for industrial switching power supplies, server/telecom rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TW027N65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on reliability, efficiency, and industrial-grade performance.

The TW027N65C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-voltage, high-frequency switching applications in industrial power conversion systems where thermal stability and dynamic ruggedness are essential.

FAQ

What is the maximum continuous drain current rating for TW027N65C,S1F at Tc = 100 °C?

The TW027N65C,S1F supports 42 A continuous drain current (I_D) at case temperature T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This rating reflects derating from the 58 A value at T_c = 25 °C due to thermal limitations, and must be validated against actual heatsink performance and ambient conditions in the final design.

Does TW027N65C,S1F require a negative gate voltage for reliable turn-off?

No, the TW027N65C,S1F does not require negative gate voltage for turn-off. Its recommended gate-source drive is 0 V (off) and +18 V (on), and the absolute maximum V_GS rating allows only −10 V minimum. The device's high V_th (3.0–5.0 V) ensures robust off-state margin with zero-volt gate bias under normal operating conditions.

How does the integrated SiC Schottky diode in TW027N65C,S1F affect reverse recovery behavior?

The integrated SiC Schottky diode in TW027N65C,S1F eliminates minority-carrier storage, resulting in soft, fast, and temperature-stable reverse recovery with t_rr = 55 ns and Q_rr = 358 nC at T_c = 25 °C. Unlike silicon body diodes, it shows no current tail and minimal dependence on dI/dt or temperature, reducing switching loss and EMI in hard-switched topologies.

What is the guaranteed channel-to-case thermal resistance (Rth(ch-c)) for TW027N65C,S1F?

The guaranteed maximum channel-to-case thermal resistance for TW027N65C,S1F is 0.961 °C/W, measured under standard mounting conditions per JEDEC JESD51-14. This value enables accurate junction temperature estimation when paired with verified heatsink thermal resistance and power dissipation data in the TW027N65C,S1F application.

Is TW027N65C,S1F suitable for use in automotive onboard chargers (OBCs)?

The TW027N65C,S1F is not qualified to AEC-Q101 and is not intended for automotive safety-critical systems. While its electrical and thermal specs meet many OBC requirements (e.g., 650 V rating, 175 °C T_ch), Toshiba explicitly excludes automotive use per its "Unintended Use" disclaimer. For automotive OBCs, AEC-Q101-qualified alternatives must be selected instead of TW027N65C,S1F.

TW027N65C,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 37mOhm @ 29A, 18V

Vgs(th) (Max) @ Id:: 5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 18 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 2288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TW027N65C,S1F FAQ

1.How can I place an order for TW027N65C,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TW027N65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TW027N65C,S1F reliable?

The price and inventory of TW027N65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW027N65C,S1F is usually 5 days.

3.What payment methods are accepted for TW027N65C,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW027N65C,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TW027N65C,S1F?

TW027N65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TW027N65C,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TW027N65C,S1F?

For technical support, including TW027N65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW027N65C,S1F requirements.

6.How does Aetrix verify that TW027N65C,S1F is sourced from the original manufacturer or authorized distributors?

All TW027N65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW027N65C,S1F meets industry standards.

7.What is the process for return or replacement of TW027N65C,S1F?

All TW027N65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW027N65C,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TW027N65C,S1F part is unused and in its original packaging.

Return procedure for TW027N65C,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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