FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT34F60SMOSFET N-CH 600V 36A D3PAK |
86 | 0.00 |
|
Datasheet |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
H5N5016PL-EN-CHANNEL POWER MOSFET |
42 | 0.00 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GPI65030DFNGANFET N-CH 650V 30A DFN8X8 |
100 | 0.00 |
|
Datasheet |
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.2V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
GPI65030TO5LGaNFET N-CH 650V 30A TO263-5L |
26 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.4V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
|
APT75M50LMOSFET N-CH 500V 75A TO264 |
9 | 0.00 |
|
Datasheet |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
IV1Q12160T4SIC MOSFET, 1200V 160MOHM, TO-24 |
96 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXFH12N100QMOSFET N-CH 1000V 12A TO247AD |
54 | 0.00 |
|
Datasheet |
HiPerFET™, Q Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
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APT6017LFLLGMOSFET N-CH 600V 35A TO264 |
15 | 0.00 |
|
Datasheet |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
AS2M040120PN-CHANNEL SILICON CARBIDE POWER |
50 | 0.00 |
|
Datasheet |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 55mOhm @ 40A, 20V | 4V @ 10mA | 142 nC @ 20 V | +25V, -10V | 2946 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SCT20N120AGSICFET N-CH 1200V 20A HIP247 |
43 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 153W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
|
HCT7000MMOSFET N-CH 60V 200MA 3SMD |
2,430 | 0.00 |
|
Datasheet |
- | 3-SMD, No Lead | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-SMD |
|
IXFX64N60Q3MOSFET N-CH 600V 64A PLUS247-3 |
17 | 0.00 |
|
Datasheet |
HiPerFET™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
APT40N60JCU2MOSFET N-CH 600V 40A SOT227 |
28 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
GPI65060DFCGaNFET N-CH 650V 60A DFN8x8 cu |
91 | 0.00 |
|
Datasheet |
- | 8-DFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 60A | 6V | 30mOhm @ 6A, 12V | 1.2V @ 3.5mA | 16 nC @ 6 V | +7.5V, -12V | 420 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (8x8) |
|
AS1M025120TN-CHANNEL SILICON CARBIDE POWER |
13 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 195 nC @ 20 V | +25V, -10V | 4200 pF @ 1000 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
APT77N60JC3MOSFET N-CH 600V 77A ISOTOP |
83 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
IXFZ520N075T2MOSFET N-CH 75V 465A DE475 |
60 | 0.00 |
|
Datasheet |
HiPerFET™, TrenchT2™ | 6-SMD, Flat Leads | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 465A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DE475 |
|
APT40M35JVRMOSFET N-CH 400V 93A SOT227 |
2 | 0.00 |
|
- |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 93A (Tc) | 10V | 35mOhm @ 46.5A, 10V | 4V @ 5mA | 1065 nC @ 10 V | ±30V | 20160 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
APTML100U60R020T1AGMOSFET N-CH 1000V 20A SP1 |
12 | 0.00 |
|
Datasheet |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 720mOhm @ 10A, 10V | 4V @ 2.5mA | - | ±30V | 6000 pF @ 25 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
VMO650-01FMOSFET N-CH 100V 690A Y3-DCB |
2 | 0.00 |
|
- |
HiPerFET™ | Y3-DCB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 690A (Tc) | 10V | 1.8mOhm @ 500mA, 10V | 6V @ 130mA | 2300 nC @ 10 V | ±20V | 59000 pF @ 25 V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Y3-DCB |
