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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT34F60S

APT34F60S

MOSFET N-CH 600V 36A D3PAK

Microchip Technology

86 0.00
RFQ
APT34F60S

Datasheet

POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 190mOhm @ 17A, 10V 5V @ 1mA 165 nC @ 10 V ±30V 6640 pF @ 25 V - 624W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
H5N5016PL-E

H5N5016PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

42 0.00
RFQ
H5N5016PL-E

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
GPI65030DFN

GPI65030DFN

GANFET N-CH 650V 30A DFN8X8

GaNPower

100 0.00
RFQ
GPI65030DFN

Datasheet

- Die Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 30A 6V - 1.2V @ 3.5mA 5.8 nC @ 6 V +7.5V, -12V 241 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
GPI65030TO5L

GPI65030TO5L

GaNFET N-CH 650V 30A TO263-5L

GaNPower

26 0.00
RFQ
GPI65030TO5L

Datasheet

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 30A 6V - 1.4V @ 3.5mA 5.8 nC @ 6 V +7.5V, -12V 241 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
APT75M50L

APT75M50L

MOSFET N-CH 500V 75A TO264

Microchip Technology

9 0.00
RFQ
APT75M50L

Datasheet

POWER MOS 8™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 75A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
IV1Q12160T4

IV1Q12160T4

SIC MOSFET, 1200V 160MOHM, TO-24

Inventchip

96 0.00
RFQ
IV1Q12160T4

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IXFH12N100Q

IXFH12N100Q

MOSFET N-CH 1000V 12A TO247AD

IXYS

54 0.00
RFQ
IXFH12N100Q

Datasheet

HiPerFET™, Q Class TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 90 nC @ 10 V ±20V 2900 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD (IXFH)
APT6017LFLLG

APT6017LFLLG

MOSFET N-CH 600V 35A TO264

Microsemi Corporation

15 0.00
RFQ
APT6017LFLLG

Datasheet

POWER MOS 7® TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 170mOhm @ 17.5A, 10V 5V @ 2.5mA 100 nC @ 10 V ±30V 4500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264 [L]
AS2M040120P

AS2M040120P

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED

50 0.00
RFQ
AS2M040120P

Datasheet

- TO-247-3 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 55mOhm @ 40A, 20V 4V @ 10mA 142 nC @ 20 V +25V, -10V 2946 pF @ 1000 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
SCT20N120AG

SCT20N120AG

SICFET N-CH 1200V 20A HIP247

STMicroelectronics

43 0.00
RFQ
SCT20N120AG

Datasheet

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 20V 239mOhm @ 10A, 20V 3.5V @ 1mA 45 nC @ 20 V +25V, -10V 650 pF @ 400 V - 153W (Tc) -55°C ~ 200°C (TJ) Automotive AEC-Q101 Through Hole HiP247™
HCT7000M

HCT7000M

MOSFET N-CH 60V 200MA 3SMD

TT Electronics/Optek Technology

2,430 0.00
RFQ
HCT7000M

Datasheet

- 3-SMD, No Lead Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±40V 60 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-SMD
IXFX64N60Q3

IXFX64N60Q3

MOSFET N-CH 600V 64A PLUS247-3

IXYS

17 0.00
RFQ
IXFX64N60Q3

Datasheet

HiPerFET™ TO-247-3 Variant Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
APT40N60JCU2

APT40N60JCU2

MOSFET N-CH 600V 40A SOT227

Microchip Technology

28 0.00
RFQ
APT40N60JCU2

Datasheet

- SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 20A, 10V 3.9V @ 1mA 259 nC @ 10 V ±20V 7015 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227
GPI65060DFC

GPI65060DFC

GaNFET N-CH 650V 60A DFN8x8 cu

GaNPower

91 0.00
RFQ
GPI65060DFC

Datasheet

- 8-DFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 60A 6V 30mOhm @ 6A, 12V 1.2V @ 3.5mA 16 nC @ 6 V +7.5V, -12V 420 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (8x8)
AS1M025120T

AS1M025120T

N-CHANNEL SILICON CARBIDE POWER

ANBON SEMICONDUCTOR (INT'L) LIMITED

13 0.00
RFQ
AS1M025120T

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 195 nC @ 20 V +25V, -10V 4200 pF @ 1000 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
APT77N60JC3

APT77N60JC3

MOSFET N-CH 600V 77A ISOTOP

Microchip Technology

83 0.00
RFQ
APT77N60JC3

Datasheet

- SOT-227-4, miniBLOC Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXFZ520N075T2

IXFZ520N075T2

MOSFET N-CH 75V 465A DE475

IXYS

60 0.00
RFQ
IXFZ520N075T2

Datasheet

HiPerFET™, TrenchT2™ 6-SMD, Flat Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 465A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DE475
APT40M35JVR

APT40M35JVR

MOSFET N-CH 400V 93A SOT227

Microchip Technology

2 0.00
RFQ

-

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 400 V 93A (Tc) 10V 35mOhm @ 46.5A, 10V 4V @ 5mA 1065 nC @ 10 V ±30V 20160 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
APTML100U60R020T1AG

APTML100U60R020T1AG

MOSFET N-CH 1000V 20A SP1

Microchip Technology

12 0.00
RFQ
APTML100U60R020T1AG

Datasheet

- SP1 Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 20A (Tc) 10V 720mOhm @ 10A, 10V 4V @ 2.5mA - ±30V 6000 pF @ 25 V - 520W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount SP1
VMO650-01F

VMO650-01F

MOSFET N-CH 100V 690A Y3-DCB

IXYS

2 0.00
RFQ

-

HiPerFET™ Y3-DCB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 690A (Tc) 10V 1.8mOhm @ 500mA, 10V 6V @ 130mA 2300 nC @ 10 V ±20V 59000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Y3-DCB
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