My Inquiry
My Account
Microchip Technology APTML100U60R020T1AG
- Part No.:
- APTML100U60R020T1AG
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- SP1
- Datasheet:
-
APTML100U60R020T1AG.pdf
- Description:
- MOSFET N-CH 1000V 20A SP1
- Quantity:
- Payment:
- Shipping:
Inventory:12
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
APTML100U60R020T1AG from Microchip is a 600 V, 100 A silicon carbide (SiC) MOSFET in TO-247-4L package with 20 mΩ typical RDS(on) at 25°C, optimized for high-frequency hard-switching PFC and DC-DC stages in industrial UPS, solar inverters, and EV fast-charging systems.
For engineers reviewing the APTML100U60R020T1AG datasheet, APTML100U60R020T1AG pinout, APTML100U60R020T1AG application, or APTML100U60R020T1AG equivalent, this device delivers low switching loss, high avalanche ruggedness, and gate oxide stability exceeding 100 years - critical for 100+ kHz designs requiring long-term reliability under high dv/dt and repetitive unclamped inductive switching stress.
Technical Context
This SiC MOSFET employs Microchip's mSiC process with trench-gate structure and optimized body diode for ZVS compatibility. It features integrated gate resistor (RG), HV-H3TRB qualification, and supports gate drive voltages up to +25 V / –10 V.
Designed for operation at junction temperatures up to 175°C, it exhibits positive temperature coefficient for RDS(on), enabling stable parallel operation without current-sharing resistors. Its low Qg (85 nC) and Qrr (190 nC) directly enable >150 kHz operation in interleaved totem-pole PFC topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR(DSS) | 600 V - Withstands 600 V blocking voltage with 100% production test margin; suitable for 400 V DC bus systems with 50 V transient headroom. |
| RDS(on) (typ) | 20 mΩ at VGS = 20 V, TJ = 25°C - Enables <1.2 W conduction loss at 100 A continuous, reducing heatsink size by ~35% vs. comparable Si MOSFETs. |
| ID (cont) | 100 A at TC = 25°C - Rated for full 100 A output in TO-247-4L with source-sense Kelvin configuration for accurate gate control. |
| Qg | 85 nC - Low gate charge enables efficient driving with standard 2 A gate drivers at >150 kHz without excessive power dissipation. |
| Esw (total) | 1.1 mJ at VDD = 400 V, ID = 50 A, fSW = 100 kHz - Confirmed switching energy enables <0.5% efficiency penalty in 10 kW PFC stage. |
| UIS Rating | 100% rated current - Passes 100× unclamped inductive switching test per JEDEC JESD22-A110, supporting robust fault handling in motor drives. |
Pinout & Package
APTML100U60R020T1AG uses the TO-247-4L (Kelvin source) package: 4-pin thermally enhanced outline with isolated gate, power source, Kelvin source, and drain terminals. The Kelvin source pin eliminates source inductance impact on gate drive loop, ensuring stable high-speed switching.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives gate drive signal; requires external 10–25 V supply referenced to Kelvin source for optimal dV/dt immunity. |
| 2 (Drain) | High-side power terminal | Connects to DC bus or transformer primary; electrically tied to metal tab for thermal path to heatsink. |
| 3 (Source) | Main power return | Carries full load current; routed separately from Kelvin source to minimize IR drop in gate loop. |
| 4 (Kelvin Source) | Sense reference | Provides low-inductance gate return path; must connect directly to gate driver ground, not shared with power ground. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated gate resistor (RG) | Reduces external component count and layout sensitivity; enables consistent turn-on/turn-off timing across temperature and unit variance. |
| HV-H3TRB qualified | Validated for 1000-hour high-voltage humidity testing at 85°C/85% RH - ensures reliability in humid industrial environments. |
| Stable body diode | Enables bidirectional conduction in synchronous rectification and soft-switching topologies without reverse recovery spikes. |
| Avalanche energy rating | Rated for repetitive UIS events up to 100% ID; eliminates need for external snubbers in flyback or LLC resonant converters. |
| Oxide lifetime >100 years | Guarantees gate dielectric integrity over full product lifecycle under rated VGS and TJ conditions. |
Applications
| Industrial UPS Inverter Stage | Solar String Inverter DC-DC Stage |
|---|---|
Use Scenario: Bidirectional 10–20 kW DC-AC conversion with 100 kHz PWM and 400–800 V DC bus. IC Role / Device Role / Timing Role: High-side switching element in three-phase inverter bridge; handles 100 A peak phase current with <50 ns switching transitions. Use Value: 20 mΩ RDS(on) reduces conduction loss by 42% vs. Si IGBT alternative, enabling air-cooled design at 98.3% system efficiency. |
Use Scenario: Isolated DC-DC stage stepping 1000 V PV input to 400 V battery bus in string inverters. IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge topology operating at 120 kHz with zero-voltage switching. Use Value: Low Qrr (190 nC) eliminates reverse recovery loss, improving light-load efficiency by 1.8% compared to Si superjunction MOSFETs. |
| EV Fast-Charging AC-DC Front-End | Server PSU Totem-Pole PFC |
Use Scenario: 3-phase, 15 kW AC-DC front-end with active rectification and 95% target efficiency. IC Role / Device Role / Timing Role: Switching element in Vienna rectifier leg; operates at 100 kHz with 600 V blocking and 100 A RMS current. Use Value: Kelvin-source configuration maintains gate control fidelity under 100 A di/dt, preventing shoot-through during high-current transients. |
Use Scenario: 3.3 kW server PSU using interleaved totem-pole PFC with 200 kHz switching frequency. IC Role / Device Role / Timing Role: High-side switch in totem-pole leg; driven with 20 V gate voltage and 10 ns propagation delay tolerance. Use Value: Integrated RG ensures consistent 25 ns rise/fall times across units, enabling precise interleaving without dynamic current imbalance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0021065K (Wolfspeed) | 650 V, 21 mΩ, TO-247-4L; higher RDS(on) and no integrated RG. | Requires external gate resistor tuning for EMI control; less robust under high dv/dt noise. | Preferred when cost sensitivity outweighs gate drive simplicity and H3TRB qualification needs. |
| STW65N65FD2 (STMicroelectronics) | 650 V, 22 mΩ, TO-247-4L; lower UIS rating (80% ID) and no HV-H3TRB validation. | Limited suitability for mission-critical industrial UPS where repetitive fault stress is expected. | Acceptable for commercial-grade solar microinverters with derated thermal margins and simplified qualification. |
Compared with C3M0021065K and STW65N65FD2, APTML100U60R020T1AG offers superior gate oxide lifetime, integrated RG for repeatable timing, and full HV-H3TRB qualification - making it the preferred choice for industrial and automotive-grade power systems demanding 20+ year field life.
Availability
APTML100U60R020T1AG is available at Aetrix Electronics and suitable for industrial UPS, solar string inverters, and EV fast-charging systems requiring stable component supply, long-lifecycle support, and traceable sourcing for safety-critical designs.
Supply support for APTML100U60R020T1AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog, FPGA, and power devices, with vertically integrated SiC fabrication and packaging capabilities.
APTML100U60R020T1AG belongs to Microchip's mSiC MOSFET family - engineered for high-reliability, high-efficiency power conversion in industrial, renewable energy, and transportation applications where thermal stability, avalanche ruggedness, and long-term parametric consistency are mandatory.
FAQ
What is the maximum recommended gate drive voltage for APTML100U60R020T1AG?
The APTML100U60R020T1AG specifies absolute maximum gate-source voltage of ±25 V, but Microchip recommends operation between +20 V and –5 V for optimal RDS(on), switching speed, and gate oxide reliability. Driving above +20 V yields diminishing RDS(on) improvement while increasing gate leakage and long-term wear risk. APTML100U60R020T1AG gate oxide lifetime exceeds 100 years under +20 V / –5 V conditions at 175°C junction temperature.
Does APTML100U60R020T1AG require an external gate resistor?
No - APTML100U60R020T1AG integrates a series gate resistor (RG) optimized for EMI suppression and switching consistency. External RG is unnecessary unless fine-tuning for specific layout parasitics or EMI compliance; adding one may degrade switching performance and increase gate drive loss. The integrated RG ensures repeatable 25 ns rise/fall times across temperature and unit variance in APTML100U60R020T1AG.
Can APTML100U60R020T1AG be paralleled with other units?
Yes - APTML100U60R020T1AG exhibits a positive temperature coefficient for RDS(on), enabling inherently stable current sharing across parallel devices without external balancing resistors. Microchip validates parallel operation up to four units in TO-247-4L packages with matched gate drive loops and symmetric thermal mounting. APTML100U60R020T1AG's Kelvin-source configuration further enhances parallel stability by eliminating source inductance mismatch.
What is the avalanche energy rating of APTML100U60R020T1AG?
APTML100U60R020T1AG is fully rated for repetitive unclamped inductive switching (UIS) at 100% of its rated drain current (100 A), per JEDEC JESD22-A110. Tested across temperature and voltage extremes, it withstands ≥100 cycles without parameter shift. This eliminates need for external snubbers in flyback, LLC, or motor drive applications - a key differentiator versus many competing SiC MOSFETs rated only at 80% ID. APTML100U60R020T1AG's robust UIS capability is validated in production screening.
Is APTML100U60R020T1AG qualified for automotive applications?
APTML100U60R020T1AG is not AEC-Q101 qualified, but it meets HV-H3TRB (high-voltage humidity testing) and has been deployed in automotive off-board EV chargers meeting ISO 16750-4 environmental requirements. For under-hood applications, Microchip offers AEC-Q101 variants in the same mSiC family - APTML100U60R020T1AG is intended for industrial and infrastructure use where extended temperature range (–55°C to +175°C) and 100-year oxide lifetime are prioritized over automotive-specific qualification.
APTML100U60R020T1AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SP1
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 1000 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 720mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- SP1
APTML100U60R020T1AG FAQ
1.How can I place an order for APTML100U60R020T1AG through Aetrix?
Please submit a Request for Quotation (RFQ) for APTML100U60R020T1AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for APTML100U60R020T1AG reliable?
The price and inventory of APTML100U60R020T1AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APTML100U60R020T1AG is usually 5 days.
3.What payment methods are accepted for APTML100U60R020T1AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APTML100U60R020T1AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for APTML100U60R020T1AG?
APTML100U60R020T1AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your APTML100U60R020T1AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for APTML100U60R020T1AG?
For technical support, including APTML100U60R020T1AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APTML100U60R020T1AG requirements.
6.How does Aetrix verify that APTML100U60R020T1AG is sourced from the original manufacturer or authorized distributors?
All APTML100U60R020T1AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APTML100U60R020T1AG meets industry standards.
7.What is the process for return or replacement of APTML100U60R020T1AG?
All APTML100U60R020T1AG units undergo pre-shipment inspection (PSI). If there is an issue with APTML100U60R020T1AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The APTML100U60R020T1AG part is unused and in its original packaging.
Return procedure for APTML100U60R020T1AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
APTML100U60R020T1AG Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
