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Renesas H5N5016PL-E
- Part No.:
- H5N5016PL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
H5N5016PL-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:42
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Product details
Overview
H5N5016PL-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in industrial and commercial DC-DC converters, motor drives, and UPS systems. It features 500 V VDSS, 50 A continuous drain current (ID), and low 0.108 Ω typical RDS(on) at VGS = 10 V, enabling efficient high-voltage switching with minimal conduction loss.
For engineers reviewing the H5N5016PL-E datasheet, H5N5016PL-E pinout, H5N5016PL-E application, or H5N5016PL-E equivalent, key selection criteria include its TO-3PL package thermal performance (θch-c = 0.5 °C/W), built-in fast-recovery body diode (trr = 230 ns), and avalanche-rated operation (EAR = 5.5 mJ) for robustness in inductive load switching.
Technical Context
This MOSFET employs planar vertical DMOS architecture optimized for high-voltage, high-current switching with low gate charge (Qg = 130 nC) and fast turn-on/turn-off times (td(on) = 60 ns, td(off) = 250 ns). Its gate threshold voltage range (VGS(off) = 1.5–4.0 V) ensures reliable enhancement-mode operation across temperature.
The integrated body-drain diode supports synchronous rectification and freewheeling functions without external diodes. Thermal design is enabled by direct-flange mounting (Drain = case) and a maximum channel temperature rating of 150 °C, supporting continuous operation up to 250 W at Tc = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands up to 500 V drain-to-source blocking voltage, suitable for 400 V bus applications with safety margin. |
| ID (continuous) | 50 A - Supports high-current loads such as 3 kW motor inverters or industrial SMPS primary switches. |
| RDS(on) (typ) | 0.108 Ω - Delivers ≤ 270 W conduction loss at 50 A, reducing heatsink requirements in high-efficiency designs. |
| trr (body diode) | 230 ns - Enables fast freewheeling in hard-switched topologies with low reverse recovery loss. |
| Qg | 130 nC - Allows efficient gate drive with standard 1–2 A peak drivers; reduces switching loss at 100 kHz+ frequencies. |
| θch-c | 0.5 °C/W - Enables direct heatsinking via flanged Drain terminal, supporting high-power density layouts. |
| EAR | 5.5 mJ - Rated for single-pulse avalanche energy, enhancing ruggedness during inductive load turn-off transients. |
Pinout & Package
Package: TO-3PL (RENESAS code PRSS0004ZF-A), metal-flanged through-hole package with isolated gate and source terminals; Drain connected directly to flange for optimal thermal and electrical path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate (G) | Control electrode | High-impedance input requiring <130 nC total charge; must be driven with low-inductance path to minimize ringing. |
| 2 - Drain (D) | Main current output / heat sink interface | Electrically and thermally tied to metal flange; requires insulated mounting hardware when heatsink is grounded. |
| 3 - Source (S) | Reference node / return path | Common reference for gate drive and load return; layout must minimize inductance to preserve switching speed and stability. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.108 Ω typ at 25 A/10 V enables <270 W conduction loss at full rated current, improving system efficiency over competing 500 V MOSFETs. |
| Built-in fast-recovery diode | 230 ns reverse recovery time and 1.5 µC Qrr reduce switching loss and EMI in flyback and half-bridge freewheeling paths. |
| Avalanche-rated | 10 A IAP and 5.5 mJ EAR support unclamped inductive switching without external snubbers in motor control and relay driving. |
| High thermal conductivity package | 0.5 °C/W channel-to-case impedance allows 250 W dissipation at 25 °C case temperature, simplifying thermal management. |
| Robust gate oxide | ±30 V VGS rating protects against transient overvoltage during PCB handling and gate driver overshoot. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: High-side switching in three-phase IGBT/MOSFET inverter stages for HVAC compressors and servo amplifiers. IC Role / Device Role / Timing Role: Main power switch controlling phase current flow; operates at 8–20 kHz PWM with precise dead-time control. Use Value: Low RDS(on) and fast trr reduce conduction and recovery losses, improving inverter efficiency by ≥1.2% versus legacy 500 V MOSFETs. |
Use Scenario: Battery-charging boost converter and inverter output stage in line-interactive and online UPS systems. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in PFC and DC-AC inversion; handles bidirectional current during battery backup mode. Use Value: Integrated body diode eliminates need for external antiparallel diode, saving board space and reducing BOM count in compact 1–3 kVA designs. |
| DC-DC Converters | Industrial Lighting Ballasts |
|
Use Scenario: Primary switch in isolated forward or half-bridge DC-DC converters for factory automation controllers and PLC power supplies. IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–250 kHz; subjected to repetitive avalanche stress during startup and fault conditions. Use Value: Avalanche energy rating (5.5 mJ) ensures reliable operation under output short-circuit and overload events without derating. |
Use Scenario: High-frequency electronic ballast for HID lamps (e.g., metal halide, high-pressure sodium) in street lighting and industrial facilities. IC Role / Device Role / Timing Role: Resonant tank switch in series-resonant inverter topology; conducts high di/dt currents with low switching loss. Use Value: Low Crss (37 pF) and high |yfs| (38 S) enable stable zero-voltage switching (ZVS) behavior and tight gain control across lamp aging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW50N50FD | 500 V, 50 A, RDS(on) = 0.11 Ω, TO-3PF package, no specified avalanche rating | Lacks documented avalanche energy spec; higher Ciss (5900 pF) increases gate drive loss | Preferred where cost sensitivity outweighs ruggedness requirements; verify layout for higher gate charge demand. |
| IXFH50N50P | 500 V, 50 A, RDS(on) = 0.10 Ω, TO-247 package, EAS = 1200 mJ (repetitive) | Higher avalanche capability but larger footprint and higher Coss (850 pF); requires larger heatsink due to θjc = 0.75 °C/W | Selected for designs needing repetitive avalanche tolerance and lower RDS(on), accepting trade-offs in size and thermal resistance. |
Compared with STW50N50FD and IXFH50N50P, the H5N5016PL-E offers superior thermal resistance (0.5 °C/W vs. ≥0.75 °C/W), tighter RDS(on) distribution, and verified single-pulse avalanche capability-making it optimal for space-constrained, high-reliability industrial switching where flange-mount thermal performance is critical.
Availability
H5N5016PL-E is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and high-efficiency DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for H5N5016PL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The H5N5016PL-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for rugged, high-efficiency power conversion in industrial equipment where thermal performance and avalanche reliability are critical.
FAQ
What is the maximum continuous drain current rating for the H5N5016PL-E?
The H5N5016PL-E has a maximum continuous drain current (ID) rating of 50 A at Tc = 25 °C. This rating assumes proper heatsinking via the flanged Drain terminal and derates linearly above 25 °C case temperature per the published thermal derating curve. At Tc = 100 °C, the usable ID drops to approximately 20 A.
Does the H5N5016PL-E include an integrated body diode, and what are its key parameters?
Yes, the H5N5016PL-E integrates a fast-recovery body-drain diode with a typical forward voltage (VDF) of 1.05 V at 50 A and reverse recovery time (trr) of 230 ns. Its reverse recovery charge (Qrr) is 1.5 µC under standard test conditions (IF = 50 A, diF/dt = 100 A/µs), enabling efficient freewheeling in hard-switched topologies.
What is the gate-to-source voltage limit for the H5N5016PL-E, and why is it important?
The H5N5016PL-E specifies a gate-to-source voltage limit (VGS) of ±30 V. Exceeding this rating risks permanent gate oxide damage. This robust rating allows compatibility with standard ±15 V gate drivers and provides margin against transient overshoot during fast switching, especially in high-dV/dt environments like motor drives.
How does the thermal performance of the H5N5016PL-E compare to TO-247 packaged MOSFETs?
The H5N5016PL-E's TO-3PL package delivers a channel-to-case thermal impedance (θch-c) of 0.5 °C/W-significantly lower than typical TO-247 devices (0.75–1.0 °C/W). This enables higher power dissipation at the same case temperature or smaller heatsinks, making the H5N5016PL-E advantageous in space-constrained industrial power modules.
Is the H5N5016PL-E suitable for avalanche-prone applications such as relay driving or inductive load switching?
Yes, the H5N5016PL-E is explicitly rated for single-pulse avalanche operation with IAP = 10 A and EAR = 5.5 mJ at Tch ≤ 150 °C. This makes it suitable for controlled unclamped inductive switching in applications like solenoid drivers, contactor control, and motor phase commutation where energy absorption without external clamping is required.
H5N5016PL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
H5N5016PL-E FAQ
1.How can I place an order for H5N5016PL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for H5N5016PL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H5N5016PL-E reliable?
The price and inventory of H5N5016PL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N5016PL-E is usually 5 days.
3.What payment methods are accepted for H5N5016PL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N5016PL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H5N5016PL-E?
H5N5016PL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H5N5016PL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H5N5016PL-E?
For technical support, including H5N5016PL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N5016PL-E requirements.
6.How does Aetrix verify that H5N5016PL-E is sourced from the original manufacturer or authorized distributors?
All H5N5016PL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N5016PL-E meets industry standards.
7.What is the process for return or replacement of H5N5016PL-E?
All H5N5016PL-E units undergo pre-shipment inspection (PSI). If there is an issue with H5N5016PL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H5N5016PL-E part is unused and in its original packaging.
Return procedure for H5N5016PL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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