STMicroelectronics SCT20N120AG

Overview

SCT20N120AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide power MOSFET with 1200 V V_DS, 20 A I_D (T_C = 25 °C), 189 mΩ R_DS(on) at T_J = 150 °C, and HiP247 package. It delivers high-temperature operation up to 200 °C junction, low switching energy (E_on = 160 µJ, E_off = 90 µJ), and fast intrinsic body diode recovery (t_rr = 15 ns) for high-efficiency EV charger DC-DC stages.

For engineers reviewing the SCT20N120AG datasheet, SCT20N120AG pinout, SCT20N120AG application, or SCT20N120AG equivalent, key selection criteria include its 1.14 °C/W junction-to-case thermal resistance, tight R_DS(on) temperature coefficient, robust 45 A pulsed drain current, and AEC-Q101 qualification for automotive-grade reliability in high-voltage power conversion.

Technical Context

This SiC MOSFET uses a planar gate structure optimized for high-voltage blocking and low capacitance (C_iss = 650 pF, C_rss = 14 pF), enabling stable switching at 800 V bus voltage with 6.8 Ω gate resistor. Its body diode exhibits soft reverse recovery (Q_rr = 75 nC, I_rrm = 8 A) and minimal voltage overshoot under dI/dt = 1650 A/µs.

The device operates across -55 °C to 200 °C junction range with gate threshold voltage tightly controlled (V_GS(th) = 2–3.5 V) and normalized R_DS(on) variation <15% from 25 °C to 200 °C, supporting consistent conduction loss in thermally demanding motor drive inverters and on-board chargers.

Key Specifications

Pinout & Package

The SCT20N120AG is housed in the HiP247 package - a modified TO-247 outline with enhanced thermal performance and isolated tab (D), featuring 3-pin configuration: Drain (Tab), Gate (Pin 1), Source (Pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065120K and SCT3022KL, the SCT20N120AG offers superior thermal robustness (200 °C T_J max), simpler 3-pin layout, and tighter V_GS(th) distribution - making it preferred for cost-sensitive, high-reliability automotive and industrial designs where gate drive simplicity and thermal margin outweigh ultra-low R_DS(on).

Availability

SCT20N120AG is available at Aetrix Electronics and suitable for motor drives, EV chargers, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SCT20N120AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The SCT series is ST's dedicated silicon carbide power MOSFET product line, engineered specifically for high-efficiency, high-power-density applications in electric mobility, renewable energy, and industrial automation where thermal resilience and switching speed are critical.

FAQ

What is the maximum gate-source voltage rating for SCT20N120AG?

The absolute maximum V_GS is -10 V to +25 V, with recommended operating range of -5 V to +20 V. Exceeding +25 V risks permanent gate oxide damage, while negative gate bias below -10 V may cause irreversible threshold shift. ST specifies ±20 V as safe gate drive window for reliable 10-year operation under AEC-Q101 conditions.

Does SCT20N120AG require a negative gate voltage for reliable turn-off?

No - the device turns off fully with 0 V gate drive due to its enhancement-mode structure and 2–3.5 V V_GS(th). However, applying -2 V to -5 V improves noise immunity in high-dv/dt environments and reduces Miller-induced false turn-on risk during hard switching. ST validates -5 V as optimal for automotive OBC applications per DS12516 test conditions.

How does the HiP247 package differ from standard TO-247?

HiP247 retains TO-247 mechanical footprint and pinout but features optimized internal die attach, copper leadframe, and enhanced thermal interface between die and tab. This yields 1.14 °C/W R_thj-case - ~20% better than standard TO-247 - while maintaining compatibility with existing heatsink tooling and assembly processes without requiring retooling.

Can SCT20N120AG replace silicon IGBTs directly in existing designs?

Yes, in many cases - especially where gate drive voltage and layout accommodate 20 V V_GS and faster switching. Key considerations include reducing gate resistor value (to control dV/dt), adding RC snubbers near drain, and verifying bus voltage overshoot remains within 1200 V rating. ST provides layout guidelines in AN5021 to ensure successful Si-to-SiC transition without redesign.