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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AM70N25-50B

AM70N25-50B

MOSFET N-CH 250V 62A TO-263

Analog Power Inc.

40 0.00
RFQ
AM70N25-50B

Datasheet

* - Bulk Active - - - - - - - - - - - - - - - - -
GPI65007DF56

GPI65007DF56

GaNFET N-CH 650V 7A DFN5x6

GaNPower

40 0.00
RFQ
GPI65007DF56

Datasheet

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 7A 6V - 1.5V @ 3.5mA 2.1 nC @ 6 V +7.5V, -12V 76.1 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

Fairchild Semiconductor

69 0.00
RFQ
FCH110N65F-F155

Datasheet

FRFET®, SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
CC-C2-B15-0322

CC-C2-B15-0322

SiC Power MOSFET 1200V 12A

CoolCAD

30 0.00
RFQ
CC-C2-B15-0322

Datasheet

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Ta) 15V 135mOhm @ 10A, 15V 3.2V @ 5mA 40 nC @ 15 V +15V, -5V 1810 pF @ 200 V - 100W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247
FCH043N60

FCH043N60

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

50 0.00
RFQ
FCH043N60

Datasheet

SuperFET® II TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 43mOhm @ 38A, 10V 3.5V @ 250µA 215 nC @ 10 V ±20V 12225 pF @ 400 V - 592W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
NC1M120C75HTNG

NC1M120C75HTNG

SiC MOSFET N 1200V 75mohm 47A 4

NovuSem

100 0.00
RFQ
NC1M120C75HTNG

Datasheet

NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A (Tc) 20V 75mOhm @ 20A, 20V 2.8V @ 5mA - +20V, -5V 1450 pF @ 1000 V - 288W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NC1M120C75RRNG

NC1M120C75RRNG

SiC MOSFET N 1200V 75mohm 46A 7

NovuSem

100 0.00
RFQ
NC1M120C75RRNG

Datasheet

NC1M TO-263-8, DPak (7 Leads + Tab) Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 46A (Tc) 18V 75mOhm @ 20A, 18V 2.3V @ 5mA - +18V, -5V 1402 pF @ 1000 V - 240W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-263-7L
IRFF130

IRFF130

Power Field-Effect Transistor, 8

Flip Electronics

52 0.00
RFQ

-

- - Tray Active - - - - - - - - - - - - - - - - -
NC1M120C40GTNG

NC1M120C40GTNG

SiC MOSFET N 1200V 40mohm 76A 3

NovuSem

100 0.00
RFQ
NC1M120C40GTNG

Datasheet

NC1M TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 76A (Tc) 20V 40mOhm @ 35A, 20V 2.8V @ 10mA - +20V, -5V 2534 pF @ 1000 V - 375W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3L
NC1M120C40HTNG

NC1M120C40HTNG

SiC MOSFET N 1200V 40mohm 75A 4

NovuSem

100 0.00
RFQ
NC1M120C40HTNG

Datasheet

NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 20V 40mOhm @ 35A, 20V 2.8V @ 10mA - +20V, -5V 2534 pF @ 1000 V - 366W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NC1M120C35HTNG

NC1M120C35HTNG

SIC MOSFET 1200V 35M 75A TO247-

NextGen Components

100 0.00
RFQ
NC1M120C35HTNG

Datasheet

NC1M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1.2 kV 75A (Tc) - 50mOhm @ 33.3A, 18V 4.5V @ 15mA 190 nC @ 18 V +18V, -5V 2834 pF @ 1 kV - 386W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
NC2M120C20HTNG

NC2M120C20HTNG

SIC MOSFET 1200V 20M 126A TO247

NextGen Components

100 0.00
RFQ
NC2M120C20HTNG

Datasheet

NC2M TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1.2 kV 126A (Tc) - 30mOhm @ 63A, 20V 4.5V @ 20mA 282 nC @ 20 V +20V, -5V 4615 pF @ 1 kV - 625W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
AMTP65H150G4LSGB

AMTP65H150G4LSGB

GAN FET N-CH 650V 13A DFN8X8

Analog Power Inc.

35 0.00
RFQ
AMTP65H150G4LSGB

Datasheet

- 4-PowerTSFN Bulk Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 10A, 10V 1V @ 250µA 8.8 nC @ 6 V ±18V 760 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-DFN (8x8)
BSS123

BSS123

MOSFET N-CH 100V 170MA SOT23-3

onsemi

9,485 0.00
RFQ
BSS123

Datasheet

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 170mA 4.5V, 10V 5Ohm @ 200mA, 10V 2.5V @ 250µA 1.8 nC @ 10 V ±20V 14 pF @ 25 V - 350mW (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3
SSM3J327R,LF

SSM3J327R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage

6,138 0.00
RFQ
SSM3J327R,LF

Datasheet

U-MOSVI SOT-23-3 Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 290 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23F
AON7407

AON7407

MOSFET P-CH 20V 14.5A/40A 8DFN

Alpha & Omega Semiconductor Inc.

8,237 0.00
RFQ
AON7407

Datasheet

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 14.5A (Ta), 40A (Tc) 1.8V, 4.5V 9.5mOhm @ 14A, 4.5V 900mV @ 250µA 53 nC @ 4.5 V ±8V 4195 pF @ 10 V - 3.1W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3x3)
NTLJS3D0N02P8ZTAG

NTLJS3D0N02P8ZTAG

MOSFET N-CH 20V 12.1A 6PQFN

onsemi

4,768 0.00
RFQ
NTLJS3D0N02P8ZTAG

Datasheet

- 6-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 12.1A (Ta) 1.8V, 4.5V 3.8mOhm @ 10A, 4.5V 1.2V @ 250µA 21 nC @ 4.5 V ±12V 2165 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN (2x2)
NTD3055L104T4G

NTD3055L104T4G

MOSFET N-CH 60V 12A DPAK

onsemi

5,130 0.00
RFQ
NTD3055L104T4G

Datasheet

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 5V 104mOhm @ 6A, 5V 2V @ 250µA 20 nC @ 5 V ±15V 440 pF @ 25 V - 1.5W (Ta), 48W (Tj) -55°C ~ 155°C (TJ) - - Surface Mount DPAK
IRF7821TRPBF

IRF7821TRPBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies

9,346 0.00
RFQ
IRF7821TRPBF

Datasheet

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SO
IRF540ZPBF

IRF540ZPBF

MOSFET N-CH 100V 36A TO220AB

Infineon Technologies

5,343 0.00
RFQ
IRF540ZPBF

Datasheet

HEXFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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