FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AM70N25-50BMOSFET N-CH 250V 62A TO-263 |
40 | 0.00 |
|
Datasheet |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GPI65007DF56GaNFET N-CH 650V 7A DFN5x6 |
40 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 7A | 6V | - | 1.5V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 76.1 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
FCH110N65F-F155MOSFET N-CH 650V 35A TO247 |
69 | 0.00 |
|
Datasheet |
FRFET®, SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
CC-C2-B15-0322SiC Power MOSFET 1200V 12A |
30 | 0.00 |
|
Datasheet |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Ta) | 15V | 135mOhm @ 10A, 15V | 3.2V @ 5mA | 40 nC @ 15 V | +15V, -5V | 1810 pF @ 200 V | - | 100W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
|
FCH043N60POWER FIELD-EFFECT TRANSISTOR, 7 |
50 | 0.00 |
|
Datasheet |
SuperFET® II | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
NC1M120C75HTNGSiC MOSFET N 1200V 75mohm 47A 4 |
100 | 0.00 |
|
Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 47A (Tc) | 20V | 75mOhm @ 20A, 20V | 2.8V @ 5mA | - | +20V, -5V | 1450 pF @ 1000 V | - | 288W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
NC1M120C75RRNGSiC MOSFET N 1200V 75mohm 46A 7 |
100 | 0.00 |
|
Datasheet |
NC1M | TO-263-8, DPak (7 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 46A (Tc) | 18V | 75mOhm @ 20A, 18V | 2.3V @ 5mA | - | +18V, -5V | 1402 pF @ 1000 V | - | 240W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7L |
|
IRFF130Power Field-Effect Transistor, 8 |
52 | 0.00 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NC1M120C40GTNGSiC MOSFET N 1200V 40mohm 76A 3 |
100 | 0.00 |
|
Datasheet |
NC1M | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 375W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
|
NC1M120C40HTNGSiC MOSFET N 1200V 40mohm 75A 4 |
100 | 0.00 |
|
Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 20V | 40mOhm @ 35A, 20V | 2.8V @ 10mA | - | +20V, -5V | 2534 pF @ 1000 V | - | 366W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
NC1M120C35HTNGSIC MOSFET 1200V 35M 75A TO247- |
100 | 0.00 |
|
Datasheet |
NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 75A (Tc) | - | 50mOhm @ 33.3A, 18V | 4.5V @ 15mA | 190 nC @ 18 V | +18V, -5V | 2834 pF @ 1 kV | - | 386W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
NC2M120C20HTNGSIC MOSFET 1200V 20M 126A TO247 |
100 | 0.00 |
|
Datasheet |
NC2M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 126A (Tc) | - | 30mOhm @ 63A, 20V | 4.5V @ 20mA | 282 nC @ 20 V | +20V, -5V | 4615 pF @ 1 kV | - | 625W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
AMTP65H150G4LSGBGAN FET N-CH 650V 13A DFN8X8 |
35 | 0.00 |
|
Datasheet |
- | 4-PowerTSFN | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 13A (Tc) | 10V | 180mOhm @ 10A, 10V | 1V @ 250µA | 8.8 nC @ 6 V | ±18V | 760 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-DFN (8x8) |
|
BSS123MOSFET N-CH 100V 170MA SOT23-3 |
9,485 | 0.00 |
|
Datasheet |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA | 4.5V, 10V | 5Ohm @ 200mA, 10V | 2.5V @ 250µA | 1.8 nC @ 10 V | ±20V | 14 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
SSM3J327R,LFMOSFET P-CH 20V 3.9A SOT23F |
6,138 | 0.00 |
|
Datasheet |
U-MOSVI | SOT-23-3 Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-23F |
|
|
AON7407MOSFET P-CH 20V 14.5A/40A 8DFN |
8,237 | 0.00 |
|
Datasheet |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 14.5A (Ta), 40A (Tc) | 1.8V, 4.5V | 9.5mOhm @ 14A, 4.5V | 900mV @ 250µA | 53 nC @ 4.5 V | ±8V | 4195 pF @ 10 V | - | 3.1W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN-EP (3x3) |
|
NTLJS3D0N02P8ZTAGMOSFET N-CH 20V 12.1A 6PQFN |
4,768 | 0.00 |
|
Datasheet |
- | 6-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12.1A (Ta) | 1.8V, 4.5V | 3.8mOhm @ 10A, 4.5V | 1.2V @ 250µA | 21 nC @ 4.5 V | ±12V | 2165 pF @ 10 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-PQFN (2x2) |
|
NTD3055L104T4GMOSFET N-CH 60V 12A DPAK |
5,130 | 0.00 |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 5V | 104mOhm @ 6A, 5V | 2V @ 250µA | 20 nC @ 5 V | ±15V | 440 pF @ 25 V | - | 1.5W (Ta), 48W (Tj) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | DPAK |
|
IRF7821TRPBFMOSFET N-CH 30V 13.6A 8SO |
9,346 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1010 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF540ZPBFMOSFET N-CH 100V 36A TO220AB |
5,343 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
