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Infineon Technologies IRF540ZPBF

Part No.:
IRF540ZPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRF540ZPBF.pdf
Description:
MOSFET N-CH 100V 36A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,343

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Product details

Overview

IRF540ZPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, rated for 100V VDSS, 36A continuous drain current at TC = 25°C, and 26.5mΩ RDS(on) at VGS = 10V. It features 175°C maximum junction temperature, fast switching (tr = 51ns, tf = 39ns), and tested repetitive avalanche capability up to Tjmax, making it suitable for DC-DC converters, motor drives, and power supply primary-side switching.

For engineers reviewing the IRF540ZPBF datasheet, IRF540ZPBF pinout, IRF540ZPBF application, or IRF540ZPBF equivalent, key selection criteria include verified RDS(on) at 10V gate drive, body diode reverse recovery charge (Qrr = 41–62nC), thermal resistance (RθJC = 1.64°C/W), and avalanche energy rating (EAS = 83mJ).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per die area while maintaining robust safe operating area (SOA) up to 100V and 36A. Its gate threshold voltage (VGS(th) = 2.0–4.0V) enables reliable turn-on with standard 10V logic-level drivers.

The integrated body diode exhibits VSD = 1.3V at IS = 22A and trr = 33–50ns, supporting synchronous rectification and inductive load commutation. Thermal design is supported by validated transient impedance curves and linear derating (1.64°C/W junction-to-case).

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - Maximum blocking voltage before avalanche; defines upper limit for DC bus or flyback primary applications.
RDS(on)26.5mΩ max @ VGS = 10V, TJ = 25°C - Directly determines conduction loss in high-current paths (e.g., 36A × 26.5mΩ = 34W worst-case Pcond).
ID (cont)36A @ TC = 25°C - Continuous current rating under heatsink-cooled conditions; derates to 25A at TC = 100°C.
Qg63nC max - Total gate charge required for full turn-on; impacts driver sizing and switching loss (e.g., 12Ω gate resistor yields ~42ns delay).
EAS83mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching without failure if Tj ≤ 175°C.
tr/tf51ns/39ns - Rise/fall times at VDD = 50V, ID = 22A, RG = 12Ω; sets hard-switching frequency ceiling (~200kHz practical limit).
TJ max175°C - Maximum junction temperature; allows operation in high-ambient industrial environments with appropriate thermal management.

Pinout & Package

IRF540ZPBF is housed in a through-hole TO-220AB package with isolated tab (electrically connected to drain). The package provides low thermal resistance (RθJC = 1.64°C/W) and mechanical stability for PCB mounting with screw torque of 10 lbf·in (1.1N·m).

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path collectorElectrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
SourceCurrent return path / reference nodeCommon return for load current and gate drive reference; connects to power ground or low-side switch node.
GateControl terminalHigh-impedance input requiring <200nA leakage; sensitive to ESD; must be driven with ≥10V for full RDS(on) specification.

Key Features

FeatureDesign Value
Ultra-low RDS(on)26.5mΩ at 10V gate drive reduces conduction losses in high-current DC-DC stages and motor H-bridges.
175°C junction ratingEnables operation in sealed enclosures or high-ambient environments without derating beyond thermal limits.
Fast switching speed51ns rise / 39ns fall time minimizes transition losses in hard-switched topologies up to 200kHz.
Repetitive avalanche ratedValidated for repeated unclamped inductive switching events as long as Tj remains ≤175°C.
Lead-free constructionComplies with RoHS Directive 2011/65/EU; Pb-free plating on leads and tab meets JEDEC J-STD-020 reflow profile.

Applications

DC-DC Converter Primary SwitchBrushed DC Motor Driver

Use Scenario: High-efficiency 48V-to-12V buck converter in telecom power systems operating at 100kHz with 30A output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated by PWM controller.

Use Value: 26.5mΩ RDS(on) limits conduction loss to <2.4W at 30A, enabling >94% efficiency without forced air cooling.

Use Scenario: Half-bridge H-bridge for 24V brushed motor control in industrial automation, reversing direction via complementary drive.

IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET configuration; synchronized with high-side device using dead-time control.

Use Value: 175°C Tjmax and 36A rating support 100% duty cycle stall current without thermal shutdown in enclosed cabinets.

AC-DC SMPS Primary SideLED Driver High-Side Switch

Use Scenario: Flyback converter primary switch in 65W offline LED driver with universal AC input (85–265VAC).

IC Role / Device Role / Timing Role: Main switching element clamped by RCD snubber; subjected to 100V+ VDS spikes during turn-off.

Use Value: 100V VDSS and 83mJ EAS ensure reliable operation under reflected output voltage plus leakage inductance spikes.

Use Scenario: Constant-current LED string driver with high-side current sensing and PWM dimming at 1kHz.

IC Role / Device Role / Timing Role: High-side series pass switch between DC bus and LED anode; controlled by isolated gate driver.

Use Value: Fast tf = 39ns ensures clean PWM edges for flicker-free dimming; low Qg reduces driver power consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06L60V VDSS, 50A ID, 14mΩ RDS(on), TO-220 packageLower voltage rating limits use to ≤48V systems; higher current capacity suits larger motors.Select when lower conduction loss at ≤48V is prioritized over 100V headroom.
IRFZ44NPBF55V VDSS, 49A ID, 28mΩ RDS(on), TO-220 packageReduced voltage margin increases risk of avalanche in 48V+ inductive loads; similar thermal performance.Choose only for cost-sensitive ≤36V designs where 55V rating is sufficient and 28mΩ is acceptable.

Compared with STP55NF06L and IRFZ44NPBF, IRF540ZPBF offers superior 100V blocking capability and proven repetitive avalanche behavior-critical for flyback, boost, and motor freewheeling applications where voltage transients exceed 60V.

Availability

IRF540ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC SMPS requiring stable component supply and long-term industrial availability.

Supply support for IRF540ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF540ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and consumer power supplies.

FAQ

Is IRF540ZPBF logic-level compatible?

No. IRF540ZPBF has a gate threshold voltage range of 2.0–4.0V but requires ≥10V VGS to achieve its specified 26.5mΩ RDS(on). Driving it with 5V logic results in significantly higher on-resistance (>100mΩ), excessive conduction loss, and potential thermal runaway. A dedicated gate driver or level-shifter is mandatory for microcontroller-based control.

What is the maximum recommended gate resistor value for reliable switching?

For stable turn-on without oscillation and minimal switching loss, a gate resistor of 10–22Ω is recommended when driven by a 1A peak gate driver. Values above 47Ω increase switching time disproportionately, raising transition losses; values below 5Ω risk ringing due to gate loop inductance and require careful PCB layout with short, wide traces and local decoupling.

Does IRF540ZPBF have a built-in ESD protection diode?

No. IRF540ZPBF lacks integrated gate protection diodes. Its gate oxide is susceptible to ESD damage from human handling or system transients. Always use grounded wrist straps during assembly, install TVS diodes across gate-source in final circuits, and avoid floating gate connections during testing or debugging.

Can IRF540ZPBF replace IRF540N in existing designs?

Yes, with verification. IRF540ZPBF improves upon IRF540N with lower RDS(on) (26.5mΩ vs. 44mΩ), faster switching, and enhanced avalanche ruggedness. However, layout and thermal design must confirm that reduced conduction loss does not mask underlying issues like inadequate heatsinking or marginal SOA margins under fault conditions.

IRF540ZPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
26.5mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1770 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
92W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRF540ZPBF FAQ

1.How can I place an order for IRF540ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF540ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF540ZPBF reliable?

The price and inventory of IRF540ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF540ZPBF is usually 5 days.

3.What payment methods are accepted for IRF540ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF540ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF540ZPBF?

IRF540ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF540ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF540ZPBF?

For technical support, including IRF540ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF540ZPBF requirements.

6.How does Aetrix verify that IRF540ZPBF is sourced from the original manufacturer or authorized distributors?

All IRF540ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF540ZPBF meets industry standards.

7.What is the process for return or replacement of IRF540ZPBF?

All IRF540ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF540ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF540ZPBF part is unused and in its original packaging.

Return procedure for IRF540ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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