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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7821TRPBF

Name: IRF7821TRPBF
Brand: Infineon Technologies
SKU: IRF7821TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7821TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7821TRPBF.pdf

Description:: MOSFET N-CH 30V 13.6A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7821TRPBF from Infineon Technologies is a 30V, 13A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, featuring 7.0 mΩ R_DS(on) at V_GS = 10 V, 9.3 nC total gate charge, and fully characterized avalanche capability. It serves as the synchronous rectifier FET in high-frequency point-of-load buck converters for server VRMs and telecom power supplies.

For engineers reviewing the IRF7821TRPBF datasheet, IRF7821TRPBF pinout, IRF7821TRPBF application, or IRF7821TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V (9.1 mΩ max), Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery charge (Q_rr = 23–35 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET is optimized for synchronous rectification in non-isolated DC/DC converters operating above 300 kHz. Its low gate charge (Q_g = 9.3 nC typ.) and minimized Q_gd/Q_gs1 ratio reduce switching losses and mitigate C_dv/dt turn-on risk in high-dV/dt node environments.

The device integrates a robust intrinsic body diode with t_rr = 28–42 ns and Q_rr = 23–35 nC under V_DD = 20 V, I_F = 10 A conditions, enabling efficient freewheeling while minimizing cross-conduction loss in dual-FET topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 24 V intermediate bus architectures
R_DS(on) @ V_GS = 10 V	7.0 mΩ typ. - Enables <1.2 W conduction loss at 13 A RMS in 48 V→12 V buck stages
Q_g	9.3 nC typ. - Reduces gate drive power and enables use with low-current PWM controllers
Q_gd	2.9 nC typ. - Low Miller charge improves noise immunity and dV/dt ruggedness in sync-FET position
t_rr	28–42 ns - Limits reverse recovery tail current, reducing shoot-through risk during dead-time transitions
R_θJA	50 °C/W - Supports 1.6 W continuous dissipation at T_A = 70 °C without forced airflow

Pinout & Package

IRF7821TRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1–3 and 5–7 are source terminals; Pin 4 is gate; Pins 6 and 8 are drain (internally paralleled with die substrate).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Source	Common source node for internal parallel FETs; low-inductance connection critical for sync-FET body diode commutation
4	Gate	Control terminal requiring <9.3 nC charge to fully enhance; sensitive to dV/dt coupling from drain node
6, 8	Drain	Main power output node tied to switching node; thermally connected to exposed pad for PCB heat spreading

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	9.1 mΩ max - Ensures stable on-resistance under typical controller gate drive voltages
Full avalanche rating	E_AS = 44 mJ - Withstands unclamped inductive energy during startup/fault without failure
Optimized Q_gd/Q_gs1 ratio	2.9 nC / 2.5 nC ≈ 1.16 - Minimizes Miller-induced false turn-on in high-dV/dt synchronous rectifier applications
Enhanced body diode	Q_rr = 23–35 nC - Reduces stored charge loss and associated voltage overshoot during reverse recovery

Applications

Server VRM Synchronous Rectifier

Telecom Intermediate Bus Converter

Use Scenario: 48 V to 12 V step-down conversion in high-density server power modules with >500 kHz switching frequency.

IC Role / Device Role / Timing Role: Synchronous rectifier FET replacing Schottky diode to reduce conduction loss and improve efficiency at light-to-moderate loads.

Use Value: 7.0 mΩ R_DS(on) cuts conduction loss by >65% vs. 40 V Schottky, directly improving full-load efficiency by 1.2–1.8%.

Use Scenario: 24 V to 5 V/3.3 V point-of-load regulation in telecom line cards with strict thermal constraints.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck stage, operating with tight dead-time control to avoid shoot-through.

Use Value: 28–42 ns t_rr and low Q_rr enable reliable operation at 1 MHz with <100 ns dead time, preserving efficiency.

Industrial PLC Power Supply

Networking Switch ASIC Core Rail

Use Scenario: 24 V input to 5 V/3.3 V auxiliary rails in programmable logic controller power systems with wide ambient temperature range.

IC Role / Device Role / Timing Role: High-reliability synchronous rectifier subjected to repeated thermal cycling and transient overloads.

Use Value: Fully characterized avalanche rating (E_AS = 44 mJ) ensures robustness against inductive kickback during hot-plug events.

Use Scenario: 12 V to 1.0 V core supply for multi-core network processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Control FET in multiphase buck converter where fast switching and low Q_g minimize driver loading.

Use Value: 9.3 nC Q_g allows direct drive from integrated PWM controller outputs without external buffer stages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 10.5 nC; SO-8 with enhanced thermal pad	Slightly lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Preferred for ultra-high-efficiency 12 V→1 V VRMs where conduction loss dominates
IPB070N03L3G	R_DS(on) = 7.0 mΩ @ 10 V; Q_g = 12.5 nC; TO-263-3 package	Larger footprint and higher R_θJA (40 °C/W) requires heatsink for >10 A continuous	Selected when board space permits and higher single-pulse avalanche margin (E_AS = 110 mJ) is required

Compared with Si7852DP-T1-GE3 and IPB070N03L3G, IRF7821TRPBF offers the best balance of low Q_g, controlled Q_gd/Q_gs1, and SO-8 manufacturability-making it optimal for compact, high-frequency synchronous buck designs where gate drive efficiency and layout simplicity are critical.

Availability

IRF7821TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, industrial PLC power supplies, and networking switch ASIC core rails requiring stable component supply and long-term production continuity.

Supply support for IRF7821TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line delivers high-efficiency, high-reliability discrete transistors optimized for switched-mode power supplies, motor drives, and DC/DC conversion in computing and communications infrastructure.

FAQ

Is IRF7821TRPBF suitable for 4.5 V gate drive in synchronous buck applications?

Yes. The device is fully specified down to V_GS = 4.5 V, with R_DS(on) ≤ 9.1 mΩ max at that voltage. Its low threshold voltage (V_GS(th) = 1.0–2.6 V) ensures strong enhancement under typical controller gate drive levels, making it ideal for 5 V or 4.5 V logic-level synchronous rectification.

What is the maximum continuous drain current at 70 °C ambient?

The datasheet specifies 11 A continuous drain current at T_A = 70 °C with SO-8 mounting on 1 in² 2-oz copper. This rating assumes standard JEDEC test board conditions and accounts for thermal derating beyond 25 °C ambient, verified via R_θJA = 50 °C/W and P_D = 1.6 W at 70 °C.

Does IRF7821TRPBF have a qualified avalanche rating?

Yes. It is fully characterized for unclamped inductive switching with E_AS = 44 mJ at T_J = 25 °C and I_AS = 10 A. Test conditions follow JEDEC JESD24-11, and the rating is validated across temperature and pulse width per Figure 13c in the official datasheet.

How does the body diode performance compare to discrete Schottky diodes?

While its V_SD = 1.0 V forward drop is higher than Schottky diodes (~0.4 V), the IRF7821TRPBF's Q_rr = 23–35 nC and t_rr = 28–42 ns enable faster, more predictable recovery than most Schottkys in high-dI/dt applications. This reduces voltage spikes and EMI in synchronous rectifier configurations.

IRF7821TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7821TRPBF FAQ

1.How can I place an order for IRF7821TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7821TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7821TRPBF reliable?

The price and inventory of IRF7821TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7821TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7821TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7821TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7821TRPBF?

IRF7821TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7821TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7821TRPBF?

For technical support, including IRF7821TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7821TRPBF requirements.

6.How does Aetrix verify that IRF7821TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7821TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7821TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7821TRPBF?

All IRF7821TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7821TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7821TRPBF part is unused and in its original packaging.

Return procedure for IRF7821TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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