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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
65DN06B02ELEMXPSA1 DIODE GP 600V 15130A D-ELEM-1 Infineon Technologies	19	RFQ	Datasheet	-	DO-200AC, K-PUK	Bulk	Active	Standard	600 V	15130A	890 mV @ 8000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	-	-	Clamp On	BG-D-ELEM-1	180°C (Max)
IDH06SG60CXKSA2 DIODE SIL CARB 600V 6A TO220-2-1 Infineon Technologies	37	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	6A	2.3 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
46DN06B02ELEMXPSA1 DIODE GP 600V 10450A D-ELEM-1 Infineon Technologies	5	RFQ	Datasheet	-	DO-200AC, K-PUK	Bulk	Active	Standard	600 V	10450A	980 mV @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 600 V	-	-	-	Clamp On	BG-D-ELEM-1	180°C (Max)
IDYH10G200C5XKSA1 SIC DISCRETE Infineon Technologies	47	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	35A	1.75 V @ 10 A	-	-	150 µA @ 2000 V	1140pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
IDYH25G200C5XKSA1 SIC DISCRETE Infineon Technologies	56	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	77A	1.75 V @ 25 A	-	-	375 µA @ 2000 V	1140pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
IDYH40G200C5XKSA1 SIC DISCRETE Infineon Technologies	66	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	114A	1.75 V @ 40 A	-	-	600 µA @ 2000 V	4550pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
ND89N12KHPSA1 DIODE GEN PURP 1.2KV 89A PB20-1 Infineon Technologies	16	RFQ	Datasheet	-	Module	Tray	Active	Standard	1200 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1200 V	-	-	-	Chassis Mount	BG-PB20-1	-40°C ~ 135°C
ND89N16KHPSA1 DIODE GEN PURP 1.6KV 89A PB20-1 Infineon Technologies	11	RFQ	Datasheet	-	Module	Tray	Active	Standard	1600 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-	-	-	Chassis Mount	BG-PB20-1	-40°C ~ 135°C
D1800N48TVFXPSA1 DIODE GEN PURP 4.8KV 1800A Infineon Technologies	8	RFQ	Datasheet	-	DO-200AC, K-PUK	Tray	Active	Standard	4800 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4800 V	-	-	-	Clamp On	-	-40°C ~ 160°C
DZ1070N22KHPSA3 DIODE GP 2.2KV 1100A MODULE Infineon Technologies	2	RFQ	Datasheet	-	Module	Tray	Active	Standard	2200 V	1100A	1.11 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 2200 V	-	-	-	Chassis Mount	Module	-40°C ~ 150°C

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