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Infineon Technologies IDH06SG60CXKSA2

Part No.:
IDH06SG60CXKSA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixIDH06SG60CXKSA2.pdf
Description:
DIODE SIL CARB 600V 6A TO220-2-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:37

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Product details

Overview

IDH06SG60CXKSA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 6 A continuous forward current at TC < 130 °C, with zero reverse recovery charge and <10 ns capacitive switching time-designed for high-efficiency CCM PFC stages in server SMPS.

For engineers reviewing the IDH06SG60CXKSA2 datasheet, IDH06SG60CXKSA2 pinout, IDH06SG60CXKSA2 application, or IDH06SG60CXKSA2 equivalent, key selection criteria include its 2.1–2.3 V forward voltage at 6 A/25 °C, 8 nC total capacitive charge, 2.1 K/W junction-to-case thermal resistance, and PG-TO220-2 package with isolated case.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in temperature-independent switching behavior and no reverse recovery loss-enabling operation up to 175 °C junction temperature without performance degradation. Its dv/dt ruggedness of 50 V/ns and surge capability of 190 A (10 µs) support robust hard-switching in high-frequency power converters.

The device exhibits low stored capacitance energy (e.g., 3.5 µJ at 600 V) and stable 130 pF capacitance at 1 V reverse bias, with capacitance collapsing to ~20 pF at 300–600 V-critical for minimizing turn-on losses in totem-pole PFC and solar string inverters.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports 400 V AC input rectification with 50% safety margin in industrial PFC designs
IF (cont.)6 A @ TC < 130 °C - enables compact heatsink design in 1–3 kW power supplies
VF2.1–2.3 V @ 6 A, 25 °C - reduces conduction loss vs. Si diodes by ~40% at same current
QC8 nC - determines turn-on gate drive loss in synchronous rectifiers and totem-pole topologies
RthJC2.1 K/W - allows direct mounting to heatsink with predictable thermal path for thermal modeling
tc<10 ns - defines capacitive displacement current duration, independent of temperature or load
IR0.5–50 µA @ 600 V, 25 °C - ensures low leakage in high-impedance DC bus monitoring circuits

Pinout & Package

PG-TO220-2 package with electrically isolated metal tab (case), 2-pin configuration: Pin 1 = Cathode (C), Pin 2 = Anode (A). The isolated case enables direct heatsinking without insulating pads in grounded-source topologies.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (marked "C")CathodeHigh-side connection point; carries full output current in boost PFC; thermally coupled to case
Pin 2 (marked "A")AnodeLow-side return path; connects to switching node in totem-pole or half-bridge configurations
Metal Tab (Case)Isolated Thermal PathElectrically isolated from both pins; rated for 260 °C wave soldering at 1.6 mm from case; mounts directly to heatsink

Key Features

FeatureDesign Value
No reverse recovery (trr = 0)Eliminates switching loss and EMI associated with minority carrier tail current in Si diodes
Temperature-independent switchingCapacitive switching time and QC remain stable from –55 °C to 175 °C, enabling consistent timing in wide-temp environments
High dv/dt ruggedness50 V/ns rating prevents spurious turn-on during fast voltage transients in high-dV/dt gate drivers
Low QC/IF Figure of Merit8 nC / 6 A = 1.33 nC/A - benchmark value for high-frequency SiC diode efficiency in >100 kHz PFC
JEDEC-qualified reliabilityQualified per J-STD-20 and JESD22 for automotive and industrial applications with 175 °C max operating temperature

Applications

Server-Scale CCM PFCSolar String Inverters

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 1U/2U 1–3 kW server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Output rectifier in interleaved boost stage; handles 6 A RMS current with minimal reverse recovery loss.

Use Value: Enables >98.5% efficiency at 230 V AC input by eliminating trr-related losses and reducing VF-dependent conduction loss.

Use Scenario: DC-link freewheeling path in 1500 V-class string inverters with dual-MPPT architecture.

IC Role / Device Role / Timing Role: Anti-parallel diode in SiC MOSFET half-bridge; clamps inductive kick during dead-time with zero recovery overshoot.

Use Value: Prevents voltage spikes exceeding 600 V rating during fast commutation, improving system reliability under partial shading conditions.

Industrial UPS SystemsMotor Drive Braking Circuits

Use Scenario: Bidirectional DC bus clamp in online double-conversion UPS with 400–800 V DC link.

IC Role / Device Role / Timing Role: Regenerative energy recapture diode during battery charging phase; conducts 32 A surge for 10 ms.

Use Value: Sustains 23 A surge at 150 °C case temperature without thermal runaway, supporting IEC 62040-3 compliant overload testing.

Use Scenario: Dynamic braking path in servo drives controlling 3–7.5 kW permanent magnet motors.

IC Role / Device Role / Timing Role: Freewheeling path for regenerative energy during rapid deceleration; absorbs 5.1 A²s surge energy.

Use Value: Limits brake resistor sizing by absorbing 2.5 A²s energy at 150 °C, reducing system footprint and thermal management complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D06060E (Wolfspeed)Same 600 V/6 A rating; 2.5 V VF typ. @ 6 A/25 °C; TO-220AC package with non-isolated tabRequires insulating pad for heatsink mounting; higher VF increases conduction loss by ~15%Prefer IDH06SG60CXKSA2 when electrical isolation of case is required or lower VF is critical for efficiency targets
STPSC6H065 (STMicroelectronics)650 V rating; 1.7 V VF @ 6 A/25 °C; D2PAK package with higher RthJA (62 K/W)Higher voltage margin but larger footprint; less suitable for space-constrained 1U PSU layoutsPrefer IDH06SG60CXKSA2 when thermal resistance and package height are constrained in high-density designs

Compared with C3D06060E and STPSC6H065, IDH06SG60CXKSA2 offers the lowest combined VF/QC FoM (1.33 nC/A), isolated TO220-2 packaging, and JEDEC-qualified reliability-making it optimal for thermally demanding, safety-critical CCM PFC deployments.

Availability

IDH06SG60CXKSA2 is available at Aetrix Electronics and suitable for server power supplies, solar string inverters, and industrial UPS systems requiring stable component supply with guaranteed long-term availability and traceable lot-level sourcing.

Supply support for IDH06SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH06SG60CXKSA2 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature power conversion where zero-recovery loss and thermal stability are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous forward current IF = 6 A only when case temperature TC remains below 130 °C. At TC = 150 °C, derated IF drops to 23 A for 10 ms surge, but continuous operation requires TC ≤ 130 °C to maintain reliability and avoid thermal runaway.

Does IDH06SG60CXKSA2 require a gate driver or control signal?

No. As a passive Schottky diode, IDH06SG60CXKSA2 operates autonomously based on voltage polarity across its anode and cathode terminals. It has no gate terminal, no control interface, and no bias requirements-unlike actively controlled devices such as MOSFETs or IGBTs.

Can this diode replace a silicon fast recovery diode in an existing PFC design?

Yes, but layout and thermal validation are required. While pin-compatible in PG-TO220-2, the lower VF and zero trr reduce conduction and switching losses-but also increase peak di/dt, potentially stressing gate drivers and increasing EMI. Snubber redesign and EMI filter requalification are recommended.

Is the metal tab electrically isolated from both pins?

Yes. The PG-TO220-2 package features an electrically isolated metal tab (case), confirmed by Infineon's outline drawing and insulation test data. This allows direct mounting to a grounded heatsink without dielectric pads-critical for high-voltage isolation in 400–800 V DC bus applications.

IDH06SG60CXKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
2.3 V @ 6 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-1
Operating Temperature - Junction:
-55°C ~ 175°C

IDH06SG60CXKSA2 FAQ

1.How can I place an order for IDH06SG60CXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH06SG60CXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH06SG60CXKSA2 reliable?

The price and inventory of IDH06SG60CXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH06SG60CXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH06SG60CXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH06SG60CXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH06SG60CXKSA2?

IDH06SG60CXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH06SG60CXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH06SG60CXKSA2?

For technical support, including IDH06SG60CXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH06SG60CXKSA2 requirements.

6.How does Aetrix verify that IDH06SG60CXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH06SG60CXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH06SG60CXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH06SG60CXKSA2?

All IDH06SG60CXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH06SG60CXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH06SG60CXKSA2 part is unused and in its original packaging.

Return procedure for IDH06SG60CXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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