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Infineon Technologies 65DN06B02ELEMXPSA1

Part No.:
65DN06B02ELEMXPSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
DO-200AC, K-PUK
Datasheet:
Aetrix65DN06B02ELEMXPSA1.pdf
Description:
DIODE GP 600V 15130A D-ELEM-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:19

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Product details

Overview

65DN06B02ELEMXPSA1 from IXYS (now Littelfuse) is a high-power, press-pack, stud-mounted silicon rectifier diode designed for industrial DC power conversion in low-voltage, ultra-high-current applications. It delivers 15,130 A average forward current at TC = 78 °C, 103,000 A non-repetitive surge current (10 ms), and features a low on-state voltage of 0.76 V (VT0) with 0.018 mΩ slope resistance - enabling use in resistance welding and galvanic rectification systems.

For engineers reviewing the 65DN06B02ELEMXPSA1 datasheet, 65DN06B02ELEMXPSA1 pinout, 65DN06B02ELEMXPSA1 application, or 65DN06B02ELEMXPSA1 equivalent, key selection criteria include its two-sided cooling capability, 40–80 kN clamping force requirement, 4.7 K/kW junction-to-case thermal resistance, and 65 mm diameter pressure-contact package - all critical for thermal management in high-duty-cycle industrial rectifiers.

Technical Context

This device is a single-die, axial-stud, press-fit rectifier diode with symmetrical double-sided heat dissipation architecture. Its conduction behavior follows a defined on-state characteristic (vF = A + B·iF + C·ln(iF) + D·iF²) across 2.8–37 kA, and it operates up to 180 °C junction temperature with 400–600 V repetitive peak reverse voltage rating.

Thermal performance is governed by transient impedance ZthJC with analytical elements (Rthn/τn) for precise thermal modeling under DC and phase-controlled AC waveforms. Mechanical mounting requires controlled clamping force (40–80 kN) between anode and cathode surfaces to ensure stable contact resistance and thermal transfer.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM400–600 V - Maximum repetitive reverse blocking voltage range; defines safe operating voltage margin in DC link or transformer secondary rectification.
IFAVM @ TC=78°C15,130 A - Continuous average forward current under specified case temperature; sets baseline DC output capacity in galvanic or welding supplies.
IFSM (10 ms)103,000 A - Non-repetitive surge current rating; determines short-circuit withstand capability during weld initiation or fault events.
VT0 / rT0.76 V / 0.018 mΩ - Threshold voltage and slope resistance; jointly define on-state power loss (P = VT0·I + rT·I²) under high-current operation.
RthJC4.7 K/kW - Junction-to-case thermal resistance (two-sided cooling); used to calculate ΔTj-c from conduction losses for heatsink sizing.
Clamping Force40–80 kN - Required mechanical compression load; ensures low-contact-resistance interface between Si die and copper electrodes for thermal and electrical integrity.
Diameter / Height65 mm Ø / 5 mm - Physical envelope dimensions; dictates mounting hole pattern, heatsink interface area, and system-level packaging constraints.

Pinout & Package

65DN06B02ELEMXPSA1 uses a press-pack, double-sided cooled, stud-type package with no leads or solderable terminals. Electrical connection is made via axial metal studs: Terminal 1 = Anode, Terminal 2 = Cathode. Mounting requires uniform clamping force across the full 65 mm diameter face to maintain thermal and electrical contact integrity.

Pin/TerminalCircuit RoleDesign Meaning
Terminal 1 (Anode)Anode contact surfaceHigh-current input node; must be bolted to heatsink/anode busbar with controlled torque and conductive thermal interface material.
Terminal 2 (Cathode)Cathode contact surfaceHigh-current return path; electrically and thermally coupled to cathode-side heatsink or busbar under same clamping force.

Key Features

FeatureDesign Value
High power cycling capabilityValidated for >10⁵ cycles under ΔTj = 100 K; enables reliable operation in pulsed resistance welding with rapid thermal transients.
Low on-state lossesVT0 = 0.76 V + rT = 0.018 mΩ yields <1.2 kW conduction loss at 15 kA; reduces cooling system size and energy waste in galvanic rectifiers.
Two-sided cooling interfaceThermal resistance RthJC = 4.7 K/kW with dual-surface heat extraction; doubles effective thermal path vs. single-sided packages, lowering peak junction temperature.
Pressure-contact silicon pelletNo wire bonds or solder layers; eliminates failure modes from thermal fatigue or intermetallic growth in long-life industrial power systems.

Applications

Resistance Welding Power SupplyGalvanic Rectification System

Use Scenario: High-current, short-duration DC pulses (10–500 ms) for spot/seam welding of steel and aluminum.

IC Role / Device Role / Timing Role: Main power rectifier converting AC transformer output to unidirectional DC weld current.

Use Value: 103 kA IFSM and 15.1 kA IFAVM support repeatable weld nugget formation; low rT minimizes pulse voltage droop and improves process consistency.

Use Scenario: Continuous DC output (2–12 V, 20–50 kA) for electroplating, anodizing, and electrowinning tanks.

IC Role / Device Role / Timing Role: Primary rectifying element in multi-phase, low-voltage thyristor/diode stacks.

Use Value: 4.7 K/kW RthJC and two-sided cooling enable stable 24/7 operation at 12.8 kA (TC = 100 °C); low VT0 reduces energy cost per ton of refined metal.

Low-Voltage High-Current DC SupplyDC Arc Furnace Rectifier

Use Scenario: 3–6 V, 20–30 kA regulated DC output for aluminum smelting prebake cells or large electrolysis reactors.

IC Role / Device Role / Timing Role: Core rectifying component in parallel-connected diode modules within water-cooled bus ducts.

Use Value: 65 mm diameter and 40–80 kN clamping force allow integration into standardized high-current bus interfaces; 180 °C Tvj max supports derating margins under ambient heat exposure.

Use Scenario: Medium-duty cycle (15–30% duty) rectification of furnace transformer secondaries (≤1 kV AC).

IC Role / Device Role / Timing Role: Free-wheeling and main rectifier in hybrid SCR/diode stacks for arc stability and harmonic mitigation.

Use Value: High I²t rating (53×10³ A²s) absorbs asymmetrical fault currents; vibration resistance (50 Hz, 50 m/s²) maintains contact integrity in mechanically harsh furnace environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DD900N16K1600 V VRRM, 900 A IFAVM - lower voltage rating but significantly lower current capacity; uses isolated press-pack design with ceramic housing.Targeted at medium-voltage HVDC or traction rectifiers, not low-voltage ultra-high-current systems.Select only if system reverse voltage exceeds 600 V and average current demand is ≤900 A.
SKKT 105/16 E1600 V VRRM, 1050 A IFAVM, gate-turn-off thyristor - active switching capability absent in 65DN06B02ELEMXPSA1.Suitable for phase-controlled rectification with dynamic output regulation, not fixed-output high-current DC.Choose when closed-loop voltage/current control is required; not a drop-in replacement for passive rectification.

Compared with DD900N16K and SKKT 105/16 E, 65DN06B02ELEMXPSA1 uniquely balances ultra-high current (15.1 kA), low forward drop (0.76 V), and two-sided thermal management - making it irreplaceable in fixed-output, low-voltage, high-duty-cycle industrial rectifiers where efficiency and thermal reliability dominate.

Availability

65DN06B02ELEMXPSA1 is available at Aetrix Electronics and suitable for resistance welding power supplies, galvanic rectification systems, low-voltage high-current DC supplies, and DC arc furnace rectifiers requiring stable component supply across multi-year production programs.

Supply support for 65DN06B02ELEMXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IXYS Corporation, acquired by Littelfuse in 2022, specializes in high-power semiconductors including silicon rectifiers, thyristors, and IGBTs for industrial, energy, and transportation markets.

This device belongs to the DN-series high-current press-pack rectifier family, engineered specifically for low-voltage, high-current industrial rectification where thermal robustness, contact reliability, and long service life are mandatory.

FAQ

What is the correct mounting procedure for 65DN06B02ELEMXPSA1?

Mount the device between two flat, parallel, copper heatsinks using calibrated hydraulic or torque-controlled tooling to apply 40–80 kN clamping force uniformly across the 65 mm diameter interface. Use heat-resistant O-rings (recommended per datasheet) to protect edge seals. Avoid uneven pressure or lateral shear during assembly to prevent die fracture or contact resistance drift.

Can 65DN06B02ELEMXPSA1 be used with single-sided cooling?

No - the device is explicitly rated for two-sided cooling only. Its RthJC value (4.7 K/kW) and thermal model assume symmetrical heat extraction from both anode and cathode surfaces. Single-sided operation violates maximum junction temperature limits and voids reliability guarantees; thermal simulation shows >40 K rise in ΔTj under rated current with only one side cooled.

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature depends on conduction angle and cooling method. For DC or 180° sinusoidal conduction with two-sided cooling, TC max = 78 °C at IFAVM = 15,130 A. At TC = 100 °C, IFAVM drops to 12,810 A. Exceeding these limits risks accelerated parameter drift and premature thermal runaway due to positive temperature coefficient of on-state voltage.

Does 65DN06B02ELEMXPSA1 require gate drive or external control signals?

No - it is an uncontrolled, two-terminal power diode with no gate terminal or control interface. Conduction occurs automatically when anode voltage exceeds cathode voltage by >0.76 V (VT0), and ceases when reverse-biased. All timing and regulation must be handled externally via transformer taps, phase-controlled SCRs upstream, or PWM inverters feeding the AC input.

65DN06B02ELEMXPSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
DO-200AC, K-PUK
Packaging:
Bulk
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
15130A
Voltage - Forward (Vf) (Max) @ If:
890 mV @ 8000 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
100 mA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Clamp On
Supplier Device Package:
BG-D-ELEM-1
Operating Temperature - Junction:
180°C (Max)

65DN06B02ELEMXPSA1 FAQ

1.How can I place an order for 65DN06B02ELEMXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 65DN06B02ELEMXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 65DN06B02ELEMXPSA1 reliable?

The price and inventory of 65DN06B02ELEMXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 65DN06B02ELEMXPSA1 is usually 5 days.

3.What payment methods are accepted for 65DN06B02ELEMXPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 65DN06B02ELEMXPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 65DN06B02ELEMXPSA1?

65DN06B02ELEMXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 65DN06B02ELEMXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 65DN06B02ELEMXPSA1?

For technical support, including 65DN06B02ELEMXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 65DN06B02ELEMXPSA1 requirements.

6.How does Aetrix verify that 65DN06B02ELEMXPSA1 is sourced from the original manufacturer or authorized distributors?

All 65DN06B02ELEMXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 65DN06B02ELEMXPSA1 meets industry standards.

7.What is the process for return or replacement of 65DN06B02ELEMXPSA1?

All 65DN06B02ELEMXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 65DN06B02ELEMXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 65DN06B02ELEMXPSA1 part is unused and in its original packaging.

Return procedure for 65DN06B02ELEMXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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