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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
D3041N65TXPSA1 DIODE GEN PURP 6.5KV 4090A Infineon Technologies	4,966	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	6500 V	4090A	1.7 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 6500 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
D3001N68TXPSA1 DIODE GEN PURP 6.8KV 3910A Infineon Technologies	3,717	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	6800 V	3910A	1.7 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 6800 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
D2601N85TXPSA1 DIODE GEN PURP 8.5KV 3040A Infineon Technologies	7,416	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	8500 V	3040A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 8500 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
D2601N90TXPSA1 DIODE GEN PURP 9KV 3040A Infineon Technologies	7,931	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	9000 V	3040A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 9000 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
D3501N42TVFXPSA1 DIODE GP 4.2KV 4870A D12035K-1 Infineon Technologies	7,405	RFQ	-	-	DO-200AE	Tray	Active	Standard	4200 V	4870A	-	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4200 V	-	-	-	Chassis Mount	BG-D12035K-1	160°C (Max)
D1961SH45TXPSA1 DIODE GEN PURP 4.5KV 2380A Infineon Technologies	3,234	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	4500 V	2380A	2.5 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 4500 V	-	-	-	Chassis Mount	-	0°C ~ 140°C
D1721NH90TAOSA1 DIODE GEN PURP 2160A D10026K-1 Infineon Technologies	4,076	RFQ	Datasheet	-	DO-200, Variant	Tray	Not For New Designs	Standard	-	2160A	-	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 9000 V	-	-	-	Chassis Mount	BG-D10026K-1	0°C ~ 140°C
D6001N50TXPSA1 DIODE GEN PURP 5KV 8010A Infineon Technologies	2,515	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	5000 V	8010A	1.3 V @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	400 mA @ 5000 V	-	-	-	Chassis Mount	-	-40°C ~ 160°C
BAW78DE6327HTSA1 DIODE GEN PURP 400V 1A SOT89 Infineon Technologies	8,545	RFQ	Datasheet	-	TO-243AA	Tape & Reel (TR)	Obsolete	Standard	400 V	1A	1.6 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 400 V	10pF @ 0V, 1MHz	-	-	Surface Mount	PG-SOT89	150°C (Max)
SDT04S60 DIODE SIL CARB 600V 4A TO220-2-2 Infineon Technologies	9,688	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	4A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	150pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C

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