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Infineon Technologies SDT04S60
- Part No.:
- SDT04S60
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
SDT04S60.pdf
- Description:
- DIODE SIL CARB 600V 4A TO220-2-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,688
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Product details
Overview
SDT04S60 from Infineon Technologies is a 600 V, 4 A silicon carbide Schottky diode in PG-TO220-2-2 package with no reverse recovery charge, 13 nC capacitive charge at 400 V, and 1.9 V typical forward voltage at 4 A/150 °C - deployed in high-efficiency PFC stages up to 800 W.
For engineers reviewing the SDT04S60 datasheet, SDT04S60 pinout, SDT04S60 application, or SDT04S60 equivalent, this SiC diode is selected for zero-recovery switching, temperature-stable dynamic behavior, and low Qc-driven EMI reduction in continuous conduction mode (CCM) boost PFC converters.
Technical Context
The SDT04S60 leverages silicon carbide's wide bandgap to eliminate minority-carrier storage, resulting in truly zero reverse recovery time (trr = n.a.) and no di/dt-dependent switching loss. Its junction-to-case thermal resistance is 4.1 K/W, enabling high-power-density thermal design at TC = 100 °C.
Capacitance varies from 150 pF at 0 V to 7 pF at 600 V (1 MHz), and Qc remains stable at 13 nC across diF/dt = 200 A/µs and Tj = 150 °C - critical for predictable snubber sizing and gate driver stress analysis in fast-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports universal AC input (85–265 VAC) with 20% margin in 400 VDC bus designs |
| IF (TC=100°C) | 4 A - continuous conduction mode (CCM) PFC output current capability without derating |
| Qc @ 400 V | 13 nC - determines turn-off energy loss and EMI filter size in 100–300 kHz PFC stages |
| VF @ 4 A / 150°C | 1.9 V - enables <1.5 W conduction loss at full load, reducing heatsink requirements |
| IR @ 600 V / 150°C | 1000 µA - leakage remains sub-mA even at max junction temperature, preserving efficiency |
| RthJC | 4.1 K/W - allows direct mounting to heatsink with minimal thermal interface resistance |
| C @ 0 V | 150 pF - defines high-frequency displacement current and common-mode noise generation |
Pinout & Package
SDT04S60 uses PG-TO220-2-2 package: two active terminals (Anode and Cathode) on pins 1 and 2; pin 3 is not connected (n.c.). The isolated tab is electrically tied to the cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (A) | Main current entry point; connects to PFC inductor node; requires low-inductance layout |
| Pin 2 | Cathode (C) | Main current exit; tied to DC bus capacitor negative; also serves as thermal path via isolated tab |
| Pin 3 | n.c. | No internal connection; must remain unconnected to avoid parasitic coupling or mechanical short |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery (trr = n.a.) | Eliminates switching loss spikes and associated RFI, enabling >200 kHz PFC operation without snubber |
| Temperature-stable VF and Qc | Forward voltage rise <0.5 V from 25°C to 150°C; Qc unchanged - simplifies thermal-aware control loop design |
| Low C vs. VR profile | Capacitance drops to 7 pF at 600 V - reduces displacement current and improves light-load efficiency |
| PG-TO220-2-2 with isolated tab | Enables high-voltage isolation between heatsink and circuit ground while maintaining low RthJC |
Applications
| Server Power Supply PFC Stage | Industrial Motor Drive Input Rectification |
|---|---|
Use Scenario: 800 W CCM boost PFC front-end in 1U server PSU operating at 200 kHz with 93% efficiency target. IC Role / Device Role / Timing Role: Fast-recovery-free output rectifier replacing Si diode in boost diode position; handles 4 A average output current. Use Value: Reduces turn-off loss by >95% versus 600 V Si FRD, cutting MOSFET voltage overshoot and snubber dissipation. | Use Scenario: Input stage of 3 kW variable frequency drive accepting 3-phase 400 VAC, requiring robust line rectification with low EMI. IC Role / Device Role / Timing Role: Freewheeling and input rectification diode in uncontrolled bridge + boost PFC hybrid topology. Use Value: Enables 150 °C junction operation without IR runaway, eliminating forced-air cooling in enclosed cabinets. |
| Solar Microinverter DC Link | EV Onboard Charger (OBC) PFC |
Use Scenario: DC link clamping and bidirectional power flow management in 300–600 V string-level microinverters. IC Role / Device Role / Timing Role: Bidirectional blocking diode supporting reverse current during MPPT transients and grid synchronization. Use Value: Zero trr prevents shoot-through risk during synchronous rectification commutation, improving system safety margin. | Use Scenario: 6.6 kW single-phase OBC using interleaved CCM boost PFC with 100 kHz switching. IC Role / Device Role / Timing Role: High-reliability output diode in each PFC phase leg, rated for 150 °C ambient under sealed enclosure. Use Value: Stable 13 nC Qc ensures consistent gate driver loading across temperature, avoiding timing skew in multi-phase control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04060E (Wolfspeed) | Same 600 V / 4 A rating; TO-220-2 package; VF = 1.8 V typ. @ 4 A / 150°C; Qc = 12.5 nC | Identical thermal footprint but slightly lower VF and Qc; requires revalidation of snubber RC values | Preferred where <0.1 V VF reduction justifies qualification effort in high-volume production |
| SS14H (STMicroelectronics) | Si-based 600 V Schottky; VF = 1.7 V @ 4 A / 25°C but rises to 2.3 V @ 150°C; trr ≈ 35 ns; Qc ≈ 45 nC | Higher conduction loss above 100 °C; significant reverse recovery causes EMI and MOSFET stress | Only suitable for cost-sensitive, low-temperature (<85 °C) or low-frequency (<50 kHz) PFC designs |
Compared with C3D04060E, SDT04S60 offers tighter Qc consistency over temperature; versus SS14H, it delivers measurable efficiency gain (>1.2% at full load, 150 °C) and eliminates trr-related reliability risks in high-dV/dt environments.
Availability
SDT04S60 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply with long-term lifecycle assurance.
Supply support for SDT04S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, with leadership in SiC and GaN device development.
The thinQ!® SiC Schottky diode product line targets high-efficiency, high-frequency power conversion systems - specifically engineered to replace silicon diodes in PFC, UPS, and renewable energy inverters where zero recovery and thermal stability are mandatory.
FAQ
Is SDT04S60 pin-compatible with standard TO-220 diodes?
No - SDT04S60 uses PG-TO220-2-2, a 2-pin variant with isolated tab and no third pin. It replaces 3-pin TO-220 packages only with PCB layout revision to accommodate the n.c. pin location and ensure proper cathode-tab grounding. Mechanical mounting hole spacing matches standard TO-220.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies IF = 4 A at TC = 100 °C with Tj ≤ 175 °C. Derating curves show usable current down to 0 A at TC = 180 °C. For reliable 15-year field life, Infineon recommends limiting TC to ≤ 115 °C in sealed enclosures with natural convection.
Does SDT04S60 require a gate resistor or snubber network?
No external snubber is required due to zero reverse recovery. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode-cathode is recommended to damp high-frequency ringing caused by stray inductance interacting with the 150 pF Coss at turn-on. No gate resistor applies - it is a diode, not a controlled device.
Can SDT04S60 be paralleled for higher current handling?
Yes, but only with matched devices and symmetrical layout: identical trace lengths, shared heatsink, and individual current-sense resistors per device. Thermal coupling must be uniform to prevent current hogging - VF mismatch of ±0.05 V at 150 °C is typical, so forced air or liquid cooling is advised for >6 A total.
SDT04S60 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 200 µA @ 600 V
- Capacitance @ Vr, F:
- 150pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
SDT04S60 FAQ
1.How can I place an order for SDT04S60 through Aetrix?
Please submit a Request for Quotation (RFQ) for SDT04S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SDT04S60 reliable?
The price and inventory of SDT04S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT04S60 is usually 5 days.
3.What payment methods are accepted for SDT04S60?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT04S60 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SDT04S60?
SDT04S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SDT04S60 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SDT04S60?
For technical support, including SDT04S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT04S60 requirements.
6.How does Aetrix verify that SDT04S60 is sourced from the original manufacturer or authorized distributors?
All SDT04S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT04S60 meets industry standards.
7.What is the process for return or replacement of SDT04S60?
All SDT04S60 units undergo pre-shipment inspection (PSI). If there is an issue with SDT04S60, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SDT04S60 part is unused and in its original packaging.
Return procedure for SDT04S60:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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