Infineon Technologies D2601N90TXPSA1

Overview

D2601N90TXPSA1 from Infineon Technologies is a high-voltage, high-current press-pack rectifier diode designed for medium-voltage converter and crowbar applications. It delivers 9000 V repetitive peak reverse voltage (VRRM), 2200 A average forward current at 100 °C case temperature (IFAVM), and 52 kA surge current capability (IFSM) in a hermetically sealed ceramic package with dual-sided cooling interface.

For engineers reviewing the D2601N90TXPSA1 datasheet, D2601N90TXPSA1 pinout, D2601N90TXPSA1 application, or D2601N90TXPSA1 equivalent, key selection criteria include clamping force range (36–52 kN), junction-to-case thermal resistance (7.5 K/kW), and reverse recovery charge (25 mAs at 1000 V), critical for high-reliability pulsed-power and drive rectification designs.

Technical Context

This device is a silicon-based, pressure-contact rectifier diode optimized for forced-cooled, high-power industrial systems requiring full 50/60 Hz blocking over -40 °C to +160 °C junction temperature range. Its low slope resistance (0.414 mΩ max) and threshold voltage (0.944 V max) ensure minimal conduction loss under high DC load conditions.

The diode features asymmetric thermal impedance behavior depending on cooling configuration: two-sided cooling yields lowest transient thermal resistance (ZthJC), while anode- or cathode-sided cooling increases effective RthJC to 13.3–17.2 K/kW. Reverse recovery performance is characterized at both 100 V and 1000 V reverse bias, with peak reverse recovery current up to 400 A and recovered charge up to 25 mAs.

Key Specifications

Pinout & Package

Package: Press-pack ceramic housing with dual-sided copper terminals (anode and cathode), 121 mm max diameter, 86 mm contact diameter, 26 mm height, hermetically sealed. Requires external mechanical clamping for electrical and thermal contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier applications.

Compared with DD900S90K22 and SKKH 2200/90, D2601N90TXPSA1 offers superior thermal performance under dual-sided cooling and guaranteed hermeticity-critical for offshore, rail traction, and unventilated converter enclosures where long-term corrosion resistance and thermal predictability are non-negotiable.

Availability

D2601N90TXPSA1 is available at Aetrix Electronics and suitable for medium voltage converters, crowbar protection systems, and pulsed power supplies requiring stable component supply under extended production cycles and high-reliability qualification.

Supply support for D2601N90TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

D2601N90TXPSA1 belongs to Infineon's high-power press-pack diode product line, engineered specifically for grid-connected medium-voltage power conversion where mechanical robustness, thermal stability, and long-term reliability outweigh compactness or ease of assembly.

FAQ

What is the recommended clamping force range for D2601N90TXPSA1?

The datasheet specifies a clamping force range of 36–52 kN. Applying force below 36 kN risks elevated contact resistance and thermal runaway; exceeding 52 kN may deform copper terminals or compromise ceramic housing integrity. Force must be evenly distributed across both anode and cathode surfaces using calibrated hydraulic or torque-controlled tooling.

Does D2601N90TXPSA1 require a heatsink, and what cooling configurations are supported?

Yes-D2601N90TXPSA1 requires external heatsinking. It supports dual-sided (two-sided), anode-sided, or cathode-sided cooling. Dual-sided cooling achieves the lowest RthJC (7.5 K/kW); anode- or cathode-sided configurations increase RthJC to 13.3–17.2 K/kW and require derating of IFAVM by ~15–25% depending on thermal interface quality.

How does reverse recovery behavior differ between 100 V and 1000 V test conditions?

At VR = 100 V, typical Qr is 12.5 mAs and IRM is 250 A; at VR = 1000 V, Qr rises to 25 mAs and IRM reaches 400 A. This voltage-dependent recovery reflects increased stored charge in the drift region and higher electric field acceleration of minority carriers-critical for snubber design in high-voltage DC link applications.

Can D2601N90TXPSA1 be paralleled with other diodes for higher current handling?

Parallel operation is not recommended without active current balancing. The device lacks integrated current-sharing features, and parameter spread (e.g., V(TO), rT) combined with thermal coupling effects can cause uneven current distribution. For >2200 A requirements, use multiple independent strings with individual heatsinks and matched thermal paths instead of direct paralleling.