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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies D2601N85TXPSA1

Name: D2601N85TXPSA1
Brand: Infineon Technologies
SKU: D2601N85TXPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: D2601N85TXPSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: DO-200AE

Datasheet:: D2601N85TXPSA1.pdf

Description:: DIODE GEN PURP 8.5KV 3040A

Quantity:: RFQ Add To RFQ list

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Inventory:7,416

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Product details

Overview

D2601N85TXPSA1 from Infineon Technologies is a high-power, hermetically sealed ceramic press-pack rectifier diode designed for medium-voltage drive and pulsed-power systems. It delivers 2200 A average forward current at 100 °C case temperature, 9000 V repetitive peak reverse voltage, and withstands 52 kA surge current with 7.5 K/kW junction-to-case thermal resistance.

For engineers reviewing the D2601N85TXPSA1 datasheet, D2601N85TXPSA1 pinout, D2601N85TXPSA1 application, or D2601N85TXPSA1 equivalent, key selection criteria include clamping force range (36–52 kN), dual-sided cooling capability, 121 mm maximum diameter, and verified reverse recovery performance under 10 A/µs di/dt conditions.

Technical Context

This diode employs a silicon pellet with pressure-contact construction enabling full 50/60 Hz blocking over –40 °C to +160 °C junction temperature. Its low on-state threshold voltage (0.944 V) and slope resistance (0.414 mΩ) support high-efficiency conduction in high-current DC links.

The device features two-sided thermal path design with 7.5 K/kW R_thJC (max) and transient thermal impedance optimized for pulsed loads. Reverse recovery is characterized at VR = 100 V and 1000 V, delivering Q_r = 12.5 mAs (typ.) and I_RM = 250 A (typ.) under standardized 10 A/µs commutation stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	9000 V - supports isolation in medium-voltage converters up to 6.3 kV DC bus
I_FAVM	2200 A @ T_C = 100 °C - rated continuous forward current for industrial drive rectifiers
I_FSM	52000 A @ t_P = 10 ms - handles short-circuit fault currents in crowbar protection circuits
V_T0	0.944 V - low threshold voltage minimizes conduction loss at light load
r_T	0.414 mΩ - linear slope resistance defines voltage drop linearity above threshold
R_thJC	7.5 K/kW - enables efficient heat extraction via dual-sided heatsink mounting
Q_r	25 mAs max @ VR = 1000 V - quantifies stored charge affecting snubber sizing in high-dV/dt switching

Pinout & Package

Hermetically sealed ceramic press-pack package with two axial terminals: Anode (Terminal 1) and Cathode (Terminal 2), requiring mechanical clamping force of 36–52 kN. Dimensions: Ø121 mm max, contact diameter 86 mm, height 26 mm, weight ~1200 g.

Pin/Terminal	Circuit Role	Design Meaning
Anode (1)	Forward current entry point	High-current input terminal; must be mounted to heatsink with specified clamping force for thermal and electrical integrity
Cathode (2)	Forward current exit point	High-current output terminal; symmetric thermal path enables bidirectional cooling when used with dual-sided heatsinks

Key Features

Feature	Design Value
Full 50/60 Hz blocking capability	Stable reverse blocking across –40 °C to +160 °C junction temperature without derating
High DC blocking stability	Maximum reverse leakage <100 mA at V_RRM and T_vj = 160 °C ensures reliability in long-duration DC link applications
High surge current capability	52 kA non-repetitive surge rating supports fault-clearing in medium-voltage drives and pulsed power systems
Hermetically sealed ceramic package	Eliminates moisture ingress and contamination risk in harsh industrial environments and high-humidity installations

Applications

Drive Rectifier

Medium-Voltage Converter

Use Scenario: Three-phase AC/DC front-end in high-power motor drives for mining conveyors and rolling mills.

IC Role / Device Role / Timing Role: Main power rectifier converting 3.3 kV AC input to regulated DC bus.

Use Value: 2200 A I_FAVM and 9000 V V_RRM enable direct rectification without series stacking, reducing system complexity and failure points.

Use Scenario: Grid-tied energy storage inverters operating at ±3.3 kV DC link voltage.

IC Role / Device Role / Timing Role: Uncontrolled rectifier stage in bi-directional medium-voltage converter topology.

Use Value: Dual-sided thermal resistance (7.5 K/kW) allows symmetrical heatsinking, improving thermal margin during continuous 100% load operation.

Crowbar Protection

Pulsed Power System

Use Scenario: Overvoltage protection circuit in high-energy physics accelerator power supplies.

IC Role / Device Role / Timing Role: Fast-acting crowbar switch that shorts DC bus during fault detection.

Use Value: 52 kA I_FSM and 25 mAs Q_r ensure reliable triggering and minimal post-fault recovery delay under 10 A/µs di/dt stress.

Use Scenario: Pulse-forming network (PFN) charging in electromagnetic launchers and laser drivers.

IC Role / Device Role / Timing Role: High-current charging diode isolating PFN from primary supply during discharge phase.

Use Value: Low r_T (0.414 mΩ) and V_T0 (0.944 V) minimize conduction loss and voltage droop during multi-kiloampere charging pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DD900N16K	1600 V V_RRM, 900 A I_FAVM, TO-247 package - lower voltage/current rating, not press-pack	Designed for lower-power industrial SMPS and UPS, not suitable for medium-voltage drive rectification	Select only for retrofit into legacy 1.2 kV systems where footprint and clamping constraints prohibit press-pack adoption
SKKH 105/16 E	1600 V V_RRM, 1050 A I_FAVM, press-pack with integrated heatsink interface	Optimized for modular converter building blocks; lacks 9 kV rating and 52 kA surge capacity	Prefer for scalable MV converter designs requiring standardized module interfaces, not for single-device 6.3 kV DC link solutions

Compared with DD900N16K and SKKH 105/16 E, D2601N85TXPSA1 uniquely supports 9 kV blocking and 2200 A continuous conduction in a field-proven press-pack form factor-critical for crowbar and drive rectifier applications where series-stacking introduces reliability and timing risks.

Availability

D2601N85TXPSA1 is available at Aetrix Electronics and suitable for medium-voltage converters, industrial drive rectifiers, crowbar protection systems, and pulsed power applications requiring stable component supply and long-term lifecycle continuity.

Supply support for D2601N85TXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

D2601N85TXPSA1 belongs to Infineon's high-power press-pack diode product line, engineered specifically for reliability-critical rectification in medium-voltage industrial drives, traction systems, and pulsed energy applications.

FAQ

What is the recommended clamping force for D2601N85TXPSA1 installation?

The datasheet specifies a mechanical clamping force range of 36–52 kN for reliable thermal and electrical contact. Force below 36 kN risks increased R_thCH and localized heating; above 52 kN may deform ceramic housing or damage internal Si pellet bonding. Use calibrated torque-controlled presses and follow Infineon's mounting procedure in Application Note AN2013-07.

Does D2601N85TXPSA1 support single-sided cooling?

Yes, but with reduced thermal performance: R_thJC degrades to 13.3 K/kW (anode-side) or 17.2 K/kW (cathode-side) versus 7.5 K/kW for dual-sided cooling. Single-sided use requires derating I_FAVM by ≥25% at T_C = 100 °C and verification of hotspot temperature via infrared thermography per IEC 60747-6.

How does reverse recovery behavior change between VR = 100 V and VR = 1000 V test conditions?

At VR = 100 V, Q_r = 12.5 mAs (typ.) and I_RM = 250 A (typ.); at VR = 1000 V, Q_r rises to 25 mAs (max.) and I_RM to 400 A (max.). This reflects higher stored charge extraction and faster carrier sweep-out under higher reverse bias-critical for snubber design in high-dV/dt applications like crowbar circuits.

Can D2601N85TXPSA1 be paralleled with identical units for higher current handling?

Parallel operation is feasible only with matched units (same date code, v_F binning, and thermal mounting symmetry) and external current-sharing inductors ≥1 µH per branch. Without these, current imbalance exceeds 15% due to parameter spread in V_T0 (±0.07 V) and r_T (±0.04 mΩ), risking thermal runaway at >1800 A total load.

D2601N85TXPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DO-200AE

Packaging:: Tray

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 8500 V

Current - Average Rectified (Io):: 3040A

Voltage - Forward (Vf) (Max) @ If:: -

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 100 mA @ 8500 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: -

Operating Temperature - Junction:: -40°C ~ 160°C

D2601N85TXPSA1 FAQ

1.How can I place an order for D2601N85TXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for D2601N85TXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for D2601N85TXPSA1 reliable?

The price and inventory of D2601N85TXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D2601N85TXPSA1 is usually 5 days.

3.What payment methods are accepted for D2601N85TXPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D2601N85TXPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for D2601N85TXPSA1?

D2601N85TXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your D2601N85TXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for D2601N85TXPSA1?

For technical support, including D2601N85TXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D2601N85TXPSA1 requirements.

6.How does Aetrix verify that D2601N85TXPSA1 is sourced from the original manufacturer or authorized distributors?

All D2601N85TXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D2601N85TXPSA1 meets industry standards.

7.What is the process for return or replacement of D2601N85TXPSA1?

All D2601N85TXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with D2601N85TXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The D2601N85TXPSA1 part is unused and in its original packaging.

Return procedure for D2601N85TXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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