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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
ND260N08KHPSA1 DIODE GP 800V 260A PB50ND-1 Infineon Technologies	3,702	RFQ	-	-	Module	Tray	Obsolete	Standard	800 V	260A	1.32 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 800 V	-	-	-	Chassis Mount	BG-PB50ND-1	150°C (Max)
AIDW10S65C5XKSA1 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	2,709	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	303pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
AIDW12S65C5XKSA1 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	4,884	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	363pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
AIDW16S65C5XKSA1 DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies	6,294	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	471pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
AIDW20S65C5XKSA1 DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies	6,817	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	584pF @ 1V, 1MHz	Automotive	AEC-Q100/101	Through Hole	PG-TO247-3-41	-40°C ~ 175°C
D170S25BS1XPSA1 DIODE GP 2.5KV 255A DSW271-1 Infineon Technologies	9,672	RFQ	-	-	Stud	Bulk	Obsolete	Standard	2500 V	255A	2.3 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 mA @ 2500 V	-	-	-	Stud Mount	BG-DSW271-1	140°C (Max)
D56S45CS02PRXPSA1 DIODE GP 4.5KV 102A DSW272-1 Infineon Technologies	7,879	RFQ	-	-	Stud	Bulk	Obsolete	Standard	4500 V	102A	4.5 V @ 320 A	Standard Recovery >500ns, > 200mA (Io)	3.3 µs	5 mA @ 4500 V	-	-	-	Stud Mount	BG-DSW272-1	125°C (Max)
D690S26TS01XPSA1 DIODE GP 2.6KV 690A D5726K-1 Infineon Technologies	8,381	RFQ	-	-	DO-200AB, B-PUK	Bulk	Obsolete	Standard	2600 V	690A	2.7 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	9 µs	25 mA @ 2600 V	-	-	-	Clamp On	BG-D5726K-1	150°C (Max)
D841S45TS01XDLA1 DIODE GP 4.5KV 1080A D7514-1 Infineon Technologies	8,268	RFQ	-	-	DO-200AC, K-PUK	Bulk	Obsolete	Standard	4500 V	1080A	3.5 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	140 mA @ 4500 V	-	-	-	Clamp On	BG-D7514-1	125°C (Max)
SIDC14D60E6X7SA1 DIODE GEN PURP 600V 30A DIE Infineon Technologies	7,285	RFQ	-	-	Die	Bulk	Obsolete	Standard	600 V	30A	1.25 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Die	-55°C ~ 150°C

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