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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies AIDW16S65C5XKSA1

Name: AIDW16S65C5XKSA1
Brand: Infineon Technologies
SKU: AIDW16S65C5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIDW16S65C5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-247-3

Datasheet:: AIDW16S65C5XKSA1.pdf

Description:: DIODE SIL CARB 650V 16A TO247-3

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Product details

Overview

AIDW16S65C5XKSA1 from Infineon is a 650 V / 16 A silicon carbide Schottky diode in TO-247-3 package, designed as a unidirectional high-voltage freewheeling/anti-parallel diode in traction inverters and on-board chargers. It delivers zero reverse recovery charge (Q_c = 23 nC at V_R = 400 V), forward voltage of 1.7 V (T_j = 25°C, I_F = 16 A), and operates up to 175°C junction temperature - enabling high-frequency, high-efficiency power conversion in automotive EV systems.

For engineers reviewing the AIDW16S65C5XKSA1 datasheet, AIDW16S65C5XKSA1 pinout, AIDW16S65C5XKSA1 application, or AIDW16S65C5XKSA1 equivalent, this part supports critical design decisions for AEC-Q101-qualified SiC-based traction inverters, DC-DC boost converters, and PFC stages where thermal robustness, EMI reduction, and system-level size/cost optimization are mandatory.

Technical Context

This 5th-generation CoolSiC™ automotive Schottky diode uses thin-wafer SiC technology to achieve low figure-of-merit (Q_c × V_F) and temperature-independent switching behavior. Its zero reverse recovery eliminates commutation losses and associated snubbing requirements in hard-switched topologies.

Rated for 650 V repetitive peak reverse voltage (V_RRM) and 16 A continuous forward current at T_C = 129°C, it features R_thJC = 1.2–1.6 K/W and supports non-repetitive surge currents up to 637 A (t_p = 10 µs) - making it suitable for high-dV/dt (100 V/ns) environments in 800-V battery architectures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - Enables use in 800-V nominal battery systems with 20% voltage margin for transients.
I_F (T_C = 129°C)	16 A - Sustains full rated conduction without derating in compact heatsink layouts.
V_F @ 16 A, 25°C	1.7 V - Reduces conduction loss vs. Si counterparts, improving inverter efficiency by ~0.5–1.2%.
Q_c @ V_R = 400 V	23 nC - Eliminates reverse recovery loss and associated EMI generation during turn-off.
T_j,max	175 °C - Allows operation in under-hood environments without forced cooling derating.
R_thJC	1.2–1.6 K/W - Enables direct mounting to cold plates with predictable thermal path for thermal modeling.
E_C @ V_R = 400 V	5.4 µJ - Low stored capacitive energy reduces turn-on switching loss in synchronous rectification.

Pinout & Package

Supplied in PG-TO247-3-41 (TO-247-3) package with isolated tab. Pin 1: case (cathode-connected tab); Pin 2: cathode; Pin 3: anode. Cathode marked on top surface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Case)	Cathode connection	Electrically tied to cathode; enables low-inductance thermal and electrical path to heatsink.
Pin 2	Cathode	Main cathode terminal; used for PCB routing when case isolation is required.
Pin 3	Anode	High-current anode input; optimized for low parasitic inductance in half-bridge configurations.

Key Features

Feature	Design Value
Zero reverse recovery	Eliminates tail current and associated switching loss/EMI in hard-switched IGBT or SiC MOSFET bridges.
AEC-Q101 qualified	Validated for automotive powertrain applications including traction inverters and OBCs per stress test requirements.
175°C max junction temperature	Enables higher power density designs with reduced heatsink mass and fan dependency in confined enclosures.
Low Q_c × V_F FoM	Improves system efficiency across full load range - especially beneficial at partial load in PFC and DC-DC stages.
Pb-free, RoHS-compliant plating	Meets automotive environmental compliance standards and supports lead-free reflow assembly processes.

Applications

Traction Inverter

On-Board Charger (OBC)

Use Scenario: Bidirectional 800-V inverter driving permanent magnet motor in BEV powertrain.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across SiC MOSFET switches in 6-pack topology.

Use Value: Zero Q_rr prevents shoot-through risk and reduces switching loss by >30% vs. Si fast recovery diodes at 25 kHz switching frequency.

Use Scenario: Two-stage OBC with totem-pole PFC followed by phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: High-frequency output rectifier in LLC resonant DC-DC stage.

Use Value: Low V_F and temperature-stable Q_c maintain >97% efficiency across -40°C to 125°C ambient, reducing thermal management complexity.

DC-DC Boost Converter

Industrial Motor Drive

Use Scenario: 400-V to 800-V bidirectional boost converter in vehicle-to-grid (V2G) interface.

IC Role / Device Role / Timing Role: High-side boost diode operating at 100 kHz with 50% duty cycle.

Use Value: 100 V/ns dv/dt ruggedness ensures reliable operation during fast voltage transitions without snubber networks.

Use Scenario: High-reliability servo drive for robotic joint actuators in automated manufacturing.

IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based 3-phase inverter output stage.

Use Value: Extended T_j rating allows continuous operation at 150°C case temperature, eliminating need for active cooling in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC12065DLF	12 A rating, same 650 V V_RRM, Q_c = 25 nC (V_R = 400 V), V_F = 1.75 V @ 12 A	Limited to lower-power OBC/PFC stages; not AEC-Q101 qualified	Select when cost sensitivity outweighs automotive qualification and 16 A current headroom.
WOLFSPEED C4D10120A	10 A rating, 1200 V V_RRM, Q_c = 22 nC (V_R = 400 V), V_F = 1.8 V @ 10 A	Over-specified voltage rating increases cost and capacitance; unsuitable for 650-V optimized designs	Choose only if system requires 1200-V margin or dual-voltage platform reuse.

Compared with STPSC12065DLF and C4D10120A, AIDW16S65C5XKSA1 uniquely balances 16 A current capability, AEC-Q101 validation, and optimized 650 V rating - delivering best-in-class thermal performance and system-level cost savings in volume automotive power modules.

Availability

AIDW16S65C5XKSA1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and DC-DC boost converters requiring stable component supply, automotive-grade reliability, and long-term production continuity.

Supply support for AIDW16S65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

AIDW16S65C5XKSA1 belongs to the CoolSiC™ Automotive Schottky Diode 650 V G5 product line, engineered specifically to replace silicon diodes in high-efficiency, high-temperature EV powertrain systems while complementing Infineon's IGBT and CoolMOS™ portfolios.

FAQ

Is AIDW16S65C5XKSA1 pin-compatible with previous-generation CoolSiC diodes?

No. AIDW16S65C5XKSA1 uses the standard TO-247-3 footprint but differs electrically from G3/G4 variants due to revised doping profile and thinner wafer design. While mechanical mounting is identical, layout changes may be needed for optimal thermal and EMI performance in high-frequency designs.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies I_F = 16 A at T_C = 129°C with D = 1 (100% duty cycle). Operation above 129°C requires current derating per Figure 2 in the official Infineon datasheet (V3.0, 2018), and thermal design must ensure T_j ≤ 175°C under worst-case ambient and power dissipation conditions.

Does this diode require a gate driver or external control signal?

No. As a passive uncontrolled Schottky diode, AIDW16S65C5XKSA1 conducts automatically when forward-biased and blocks when reverse-biased. It has no gate terminal and requires no drive circuitry - unlike actively controlled devices such as MOSFETs or IGBTs.

Can AIDW16S65C5XKSA1 be used in non-automotive industrial applications?

Yes. Though AEC-Q101 qualified, its 175°C T_j,max, robust dv/dt rating (100 V/ns), and low Q_c make it suitable for industrial UPS, solar inverters, and high-end server PSUs - provided system-level reliability and thermal requirements align with its specifications.

AIDW16S65C5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 16A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 16 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 90 µA @ 650 V

Capacitance @ Vr, F:: 471pF @ 1V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q100/101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

Operating Temperature - Junction:: -40°C ~ 175°C

AIDW16S65C5XKSA1 FAQ

1.How can I place an order for AIDW16S65C5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIDW16S65C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIDW16S65C5XKSA1 reliable?

The price and inventory of AIDW16S65C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIDW16S65C5XKSA1 is usually 5 days.

3.What payment methods are accepted for AIDW16S65C5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIDW16S65C5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIDW16S65C5XKSA1?

AIDW16S65C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIDW16S65C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIDW16S65C5XKSA1?

For technical support, including AIDW16S65C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIDW16S65C5XKSA1 requirements.

6.How does Aetrix verify that AIDW16S65C5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIDW16S65C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIDW16S65C5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIDW16S65C5XKSA1?

All AIDW16S65C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIDW16S65C5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIDW16S65C5XKSA1 part is unused and in its original packaging.

Return procedure for AIDW16S65C5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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