Infineon Technologies AIDW10S65C5XKSA1

Overview

AIDW10S65C5XKSA1 from Infineon is a 650 V / 10 A silicon carbide Schottky diode in TO-247-3 package, designed as a unidirectional high-voltage freewheeling and boost rectifier in automotive traction inverters, on-board chargers, and DC-DC converters. It delivers zero reverse recovery charge (Q_c = 15 nC @ V_R = 400 V), 175 °C maximum junction temperature, and 2.3 K/W typical junction-to-case thermal resistance.

For engineers reviewing the AIDW10S65C5XKSA1 datasheet, AIDW10S65C5XKSA1 pinout, AIDW10S65C5XKSA1 application, or AIDW10S65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, automotive-grade AEC-Q101 qualification, 650 V V_RRM, 10 A continuous forward current at T_C = 134 °C, and low EMI generation in high-frequency switching topologies.

Technical Context

This 5th-generation CoolSiC™ automotive Schottky diode uses thin-wafer SiC technology to achieve a low figure of merit (Q_c × V_F) and temperature-independent switching. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 100 V/ns dv/dt without snubbers.

The device is optimized for complementary use with Infineon's 650 V IGBTs and CoolMOS™ power switches in hard-switched and resonant converter stages. Its 1.8–2.1 V forward voltage at 10 A and 150 °C ensures reduced conduction losses across full load and temperature range.

Key Specifications

Pinout & Package

Package: TO-247-3 (PG-TO247-3-41), isolated case, Pb-free lead plating, RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC10H065D and C4D10065A, AIDW10S65C5XKSA1 offers the lowest combined Q_c × V_F and tightest V_F distribution across temperature-critical for parallel operation in multi-kW automotive modules.

Availability

AIDW10S65C5XKSA1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and high-voltage DC-DC converters requiring stable component supply, automotive qualification, and high-temperature reliability.

Supply support for AIDW10S65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolSiC™ Automotive Schottky Diode product line targets high-efficiency, high-reliability power conversion in electric vehicles-specifically engineered to replace silicon diodes in 650 V traction, charging, and auxiliary systems.

FAQ

Is AIDW10S65C5XKSA1 pin-compatible with standard TO-247-3 silicon diodes?

Yes-AIDW10S65C5XKSA1 uses the industry-standard PG-TO247-3-41 footprint with identical mechanical dimensions and screw-mounting holes. Pin 2 is cathode and Pin 3 is anode, matching conventional TO-247-3 rectifier orientation. No PCB redesign is needed for drop-in replacement of Si diodes in existing layouts.

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies I_F = 10 A at T_C = 134 °C, meaning the case must be maintained at or below 134 °C for rated continuous current. This corresponds to a junction temperature of ≤175 °C assuming R_thJC = 2.3 K/W. Exceeding 134 °C requires linear derating per Figure 2 in the official Infineon datasheet.

Does AIDW10S65C5XKSA1 require a gate resistor or snubber network?

No-this is a Schottky diode with no gate terminal. Its zero reverse recovery eliminates the need for snubbers in most topologies. However, layout parasitics (e.g., stray inductance in high-di/dt paths) should still be minimized to avoid voltage overshoot; no external RC snubber is required for dv/dt robustness up to 100 V/ns.

How does AEC-Q101 qualification differ from standard industrial qualification for this part?

AEC-Q101 certification includes extended stress testing: 1000-hour high-temperature reverse bias at 175 °C, 1000-cycle temperature cycling (-40 to 150 °C), and mechanical shock/vibration tests replicating automotive under-hood conditions. These go beyond JEDEC JESD22 standards and validate long-term reliability in safety-critical EV power systems.