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Infineon Technologies AIDW12S65C5XKSA1

Part No.:
AIDW12S65C5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-247-3
Datasheet:
AetrixAIDW12S65C5XKSA1.pdf
Description:
DIODE SIL CARB 650V 12A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,884

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Product details

Overview

AIDW12S65C5XKSA1 from Infineon is a 650 V / 12 A silicon carbide Schottky diode in TO-247-3 package, designed as a unidirectional high-voltage freewheeling/anti-parallel diode for traction inverters and on-board chargers. It delivers zero reverse recovery charge (Qc = 18 nC at VR = 400 V), 175 °C maximum junction temperature, and 76 W power dissipation at TC = 25 °C.

For engineers reviewing the AIDW12S65C5XKSA1 datasheet, AIDW12S65C5XKSA1 pinout, AIDW12S65C5XKSA1 application, or AIDW12S65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, automotive-grade AEC-Q101 qualification, thermal resistance RthJC = 1.5–2.0 K/W, surge current capability (IF,SM = 71 A at TC = 25 °C, 10 ms), and low forward voltage (VF = 1.7 V typ. at 12 A, 25 °C).

Technical Context

This diode leverages Infineon's 5th-generation CoolSiC™ technology with thin-wafer design to achieve low figure-of-merit (Qc × VF) and temperature-independent switching. Its static characteristics are production-tested at 25 °C (VF, IR), while dynamic parameters like Qc and C are verified by characterization at 150 °C.

It operates with no minority-carrier storage, eliminating reverse recovery losses and associated EMI. The TO-247-3 package features isolated case (Pin 2) acting as cathode terminal, enabling direct heatsink mounting without electrical isolation pads in high-power motor drive topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - supports DC-link voltages up to 650 V in EV traction inverters and industrial PFC stages
IF (TC = 133 °C)12 A - continuous forward current rating under real-world heatsink conditions
VF (12 A, 25 °C)1.7 V typical - reduces conduction loss vs. Si diodes, improving system efficiency at partial load
Qc (VR = 400 V)18 nC - zero reverse recovery enables hard-switched operation at >50 kHz without snubbers
RthJC1.5–2.0 K/W - enables direct thermal coupling to heatsink, critical for compact inverter designs
Tj,max175 °C - allows operation in under-hood automotive environments without derating
IF,SM (10 ms)71 A at TC = 25 °C - withstands short-circuit and startup surge currents in OBC and DCDC converters

Pinout & Package

Package: PG-TO247-3-41 (TO-247-3), thermally enhanced plastic housing with isolated metal tab (Pin 2). Case is electrically connected to cathode.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; bonded to die anode metallization; connects to switching node in half-bridge leg
Pin 2Cathode / CaseElectrically isolated metal tab serving as cathode terminal and primary thermal path to heatsink
Pin 3AnodeSecondary anode connection for parallel bond wire configuration; improves current sharing and reduces parasitic inductance

Key Features

FeatureDesign Value
Zero reverse recovery charge (Qc)Eliminates turn-off switching loss and associated EMI, enabling higher-frequency operation without snubbers
AEC-Q101 qualifiedValidated for automotive powertrain applications including traction inverters and on-board chargers
175 °C max junction temperatureSupports high ambient operation in engine bay or power module integration without thermal derating
Low RthJC (1.5–2.0 K/W)Enables compact thermal design with direct-mount heatsinking, reducing system size and cost
Pb-free, RoHS-compliant platingMeets automotive environmental compliance requirements and lead-free reflow soldering standards

Applications

Traction InverterOn-Board Charger (OBC)

Use Scenario: High-power bidirectional AC/DC conversion in electric vehicle drivetrains, operating at 8–20 kHz switching frequency.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across IGBTs in 3-phase inverter legs, handling regenerative braking current.

Use Value: Zero Qc eliminates reverse recovery loss, reducing inverter thermal stress and enabling 10–15% efficiency gain over Si diodes at 10 kHz.

Use Scenario: Boost PFC and DC/DC isolation stages in 11–22 kW bi-directional OBCs.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge DC/DC converter, conducting high-frequency AC current during ZVS transitions.

Use Value: Low VF and temperature-stable switching reduce conduction loss and improve thermal margin at 150 °C ambient.

DC/DC ConverterIndustrial Motor Drive

Use Scenario: High-efficiency 400 V–800 V isolated DC/DC conversion for battery management and auxiliary power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side output stage, operating at 100–300 kHz.

Use Value: Absence of reverse recovery enables clean hard-switching waveforms, lowering EMI filter cost by ~30%.

Use Scenario: Regenerative braking and four-quadrant operation in HVAC compressors and industrial servo drives.

IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based 3-level NPC inverters, handling reactive energy return to DC bus.

Use Value: 175 °C Tj,max and robust surge rating (71 A, 10 ms) ensure reliability during frequent overload events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STPSC12065DSame 650 V / 12 A rating; Qc = 21 nC (VR = 400 V); RthJC = 2.3 K/WSlightly higher conduction loss (VF = 1.8 V typ.) and lower thermal performance limit peak power densityPreferred where ST ecosystem integration or dual-source strategy is required; verify layout for higher RthJC
Wolfspeed C4D12065AIdentical VRRM/IF; Qc = 19 nC; VF = 1.75 V; RthJC = 1.8 K/WSame automotive qualification level (AEC-Q101), but different gate drive compatibility assumptions in hybrid modulesBest for designs already using Wolfspeed SiC MOSFETs; requires validation of cathode-tab mounting interface

Compared with STPSC12065D and C4D12065A, AIDW12S65C5XKSA1 offers the lowest RthJC (1.5 K/W min) and smallest Qc (18 nC), delivering superior thermal headroom and highest-frequency hard-switching capability in space-constrained traction inverters.

Availability

AIDW12S65C5XKSA1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and industrial DC/DC converters requiring stable component supply, automotive qualification, and high-temperature reliability.

Supply support for AIDW12S65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolSiC™ Automotive Schottky Diode 650 V G5 product line, engineered specifically for high-efficiency, high-power-density electrified powertrain systems demanding zero-recovery performance and AEC-Q101 reliability.

FAQ

Is AIDW12S65C5XKSA1 pin-compatible with standard TO-247-3 silicon diodes?

Yes - it uses the industry-standard PG-TO247-3-41 footprint with identical mechanical dimensions and screw-mounting holes. Pin 1 (anode), Pin 2 (cathode/case), and Pin 3 (anode) align with JEDEC TO-247-3 layouts. However, its isolated metal tab requires verification of heatsink insulation requirements in legacy Si designs.

What is the maximum recommended dv/dt rating for this diode?

The datasheet specifies diode dv/dt ruggedness of 100 V/ns at VR = 0–480 V. This value is validated under test conditions per JESD22-A114 and reflects immunity to false turn-on during high-speed switching transients in hard-switched inverters.

Does AIDW12S65C5XKSA1 require a gate resistor or external snubber network?

No - as a Schottky diode with no minority carriers, it has no gate and requires no snubber. Its zero reverse recovery eliminates voltage overshoot and ringing during turn-off, simplifying PCB layout and reducing component count in high-frequency converters.

How does the 175 °C junction rating impact system-level thermal design?

The 175 °C Tj,max allows sustained operation at higher case temperatures (e.g., TC = 133 °C), reducing heatsink size and fan requirements. When combined with RthJC ≤ 2.0 K/W, it enables >20% smaller thermal solution volume versus 150 °C-rated Si diodes in same power class.

AIDW12S65C5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 12 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
70 µA @ 650 V
Capacitance @ Vr, F:
363pF @ 1V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q100/101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41
Operating Temperature - Junction:
-40°C ~ 175°C

AIDW12S65C5XKSA1 FAQ

1.How can I place an order for AIDW12S65C5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIDW12S65C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIDW12S65C5XKSA1 reliable?

The price and inventory of AIDW12S65C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIDW12S65C5XKSA1 is usually 5 days.

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AIDW12S65C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIDW12S65C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIDW12S65C5XKSA1?

For technical support, including AIDW12S65C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIDW12S65C5XKSA1 requirements.

6.How does Aetrix verify that AIDW12S65C5XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIDW12S65C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIDW12S65C5XKSA1 meets industry standards.

7.What is the process for return or replacement of AIDW12S65C5XKSA1?

All AIDW12S65C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIDW12S65C5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIDW12S65C5XKSA1 part is unused and in its original packaging.

Return procedure for AIDW12S65C5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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