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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDV05S60CXKSA1 DIODE SIL CARB 600V 5A TO220FP Infineon Technologies	5,855	RFQ	Datasheet	CoolSiC™+	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2 Full Pack	-55°C ~ 175°C
HFA08PB60 DIODE GP 600V 8A TO247AC Vishay General Semiconductor - Diodes Division	2,155	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 150°C
VS-30CPF10PBF DIODE GEN PURP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	7,208	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
KSF30A20B DIODE GEN PURP 200V 30A TO247 KYOCERA AVX	3,577	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	30A	980 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	25 µA @ 200 V	-	-	-	Through Hole	TO-247	-40°C ~ 150°C
CDLL1A20 DIODE SCHOTTKY 20V 1A DO213AB Microchip Technology	2,262	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	20 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	0.9pF @ 5V, 1MHz	-	-	Surface Mount	DO-213AB	-
1N411B DIODE GEN PURP 50V 100A DO205AA Microchip Technology	6,581	RFQ	Datasheet	-	DO-205AA, DO-8, Stud	Bulk	Active	Standard	50 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 50 V	-	-	-	Stud Mount	DO-205AA (DO-8)	-65°C ~ 200°C
IDK09G65C5XTMA2 DIODE SIL CARB 650V 9A TO263-2 Infineon Technologies	8,118	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	9A	1.8 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	1.6 mA @ 650 V	270pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
LSIC2SD120A05 DIODE SIC 1.2KV 17.5A TO220AC Littelfuse Inc.	2,849	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	17.5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
MBR2515L DIODE SCHOTTKY 15V 25A TO220-2 onsemi	3,889	RFQ	Datasheet	SWITCHMODE™	TO-220-2	Tube	Obsolete	Schottky	15 V	25A	450 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 mA @ 15 V	-	-	-	Through Hole	TO-220-2	-65°C ~ 125°C
VS-C12ET07T-M3 DIODE SIL CARB 650V 12A TO220AC Vishay General Semiconductor - Diodes Division	8,901	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	65 µA @ 650 V	515pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
40EPS12 DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	6,835	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	1200 V	40A	1.1 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
HSM8100J/TR13 DIODE SCHOTTKY 100V 8A DO214AB Microchip Technology	5,476	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Schottky	100 V	8A	780 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	-	-	Surface Mount	DO-214AB	-55°C ~ 175°C
VS-90APS08L-M3 DIODE GEN PURP 800V 90A TO247AD Vishay General Semiconductor - Diodes Division	4,874	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	800 V	90A	1.2 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
MBRM3100-13-F DIODE SCHOTTKY 100V 3A PWRMITE3 Diodes Incorporated	5,945	RFQ	Datasheet	-	Powermite®3	Tape & Reel (TR)	Obsolete	Schottky	100 V	3A	760 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	100pF @ 4V, 1MHz	-	-	Surface Mount	Powermite 3	-55°C ~ 125°C
BYT12P-1000 DIODE GEN PURP 1KV 12A TO220AC STMicroelectronics	5,101	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	1000 V	12A	1.9 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	155 ns	50 µA @ 1000 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
SCS206AGHRC DIODE SIL CARB 650V 6A TO220AC Rohm Semiconductor	5,670	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
UFS520GE3/TR13 DIODE GEN PURP 200V 5A DO215AB Microchip Technology	3,047	RFQ	Datasheet	-	DO-215AB, SMC Gull Wing	Tape & Reel (TR)	Active	Standard	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 200 V	-	-	-	Surface Mount	DO-215AB	-55°C ~ 175°C
VS-6F20 DIODE GEN PURP 200V 6A DO203AA Vishay General Semiconductor - Diodes Division	4,225	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	200 V	6A	1.1 V @ 19 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
BYT12PI-1000RG DIODE GP 1KV 12A TO220AC ISOL STMicroelectronics	9,984	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Obsolete	Standard	1000 V	12A	1.9 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	155 ns	50 µA @ 1000 V	-	-	-	Through Hole	TO220AC Isolated	-40°C ~ 150°C
SCS210AGC DIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor	3,248	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)

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