Infineon Technologies IDK09G65C5XTMA2

Overview

IDK09G65C5XTMA2 from Infineon is a 650 V, 9 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 14 nC capacitive charge at 400 V, 1.5–2.2 V forward voltage (9 A, 25–150°C), and 175°C max junction temperature. It replaces silicon diodes in high-frequency PFC and solar inverters where thermal stability and efficiency are critical.

For engineers reviewing the IDK09G65C5XTMA2 datasheet, IDK09G65C5XTMA2 pinout, IDK09G65C5XTMA2 application, or IDK09G65C5XTMA2 equivalent, key selection criteria include its SiC-specific dv/dt ruggedness (100 V/ns), low Qc × Vf figure of merit, and validated avalanche robustness under 10 ms pulses.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer construction to achieve lower thermal resistance (RthJC typ. 1.1 K/W) and improved surge capability (IF,SM = 75 A at TC = 25°C). Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C with stable VF and IR across temperature.

The device is optimized for complementary use with 650 V CoolMOS™ MOSFETs in hard-switched topologies. Its 650 V VRRM rating, 28 A²s i²t value, and 100 V/ns dv/dt ruggedness support reliable operation in fast-rising edge environments like boost PFC and three-phase inverters.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab and anode lead.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D09065A and STPSC9H065D, IDK09G65C5XTMA2 delivers the lowest combined Qc × Vf figure of merit (21.6 nC·V), best thermal resistance (1.1 K/W typ.), and full JESD22-A115 avalanche validation-making it optimal for thermally constrained, high-reliability PFC and solar applications.

Availability

IDK09G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, uninterruptible power supplies, and industrial SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IDK09G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

IDK09G65C5XTMA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable case temperature for continuous 9 A operation?

The datasheet specifies IF = 9 A is rated for TC < 145°C. At TC = 145°C, the device delivers full 9 A with Tj ≤ 175°C using RthJC max = 1.8 K/W. Exceeding 145°C case temperature requires derating per Figure 7 (IF vs. TC curve), where current drops to 6.2 A at TC = 155°C.

Does IDK09G65C5XTMA2 require a gate resistor or snubber network?

No-IDK09G65C5XTMA2 is a passive diode with no gate terminal. Unlike SiC MOSFETs, it does not require gate resistors. Snubbers are unnecessary due to zero reverse recovery and 100 V/ns dv/dt ruggedness, though small RC networks may still be used for EMI filtering in ultra-high-noise environments.

How does its avalanche rating compare to standard silicon diodes?

IDK09G65C5XTMA2 is 100% tested under 10 ms avalanche stress per JESD22-A115, a requirement not applied to standard silicon diodes. This validates safe energy absorption (28 A²s at 25°C) during inductive turn-off events-where conventional Si FRDs would fail catastrophically without clamping.

Can this diode replace a silicon fast recovery diode in an existing design without layout changes?

Yes-the PG-TO263-2 package matches standard D²PAK footprints. However, thermal pad area must be ≥6 cm² (70 µm Cu) to sustain 9 A, and PCB layout should minimize loop inductance given its 100 V/ns dv/dt capability. No schematic change is needed, but verify peak reverse voltage margins since VRRM is fixed at 650 V.