Infineon Technologies IDV05S60CXKSA1

Overview

IDV05S60CXKSA1 from Infineon is a 2nd Generation thinQ!™ silicon carbide (SiC) Schottky diode in TO-220 FullPAK package, rated for 600 V DC blocking voltage and 5 A continuous forward current at T_C < 100 °C. It delivers near-zero reverse recovery charge (Q_C = 12 nC), no minority-carrier reverse recovery time, and thermal resistance R_thJC = 5 K/W - enabling high-efficiency CCM PFC stages and solar inverters operating up to 175 °C junction temperature.

For engineers reviewing the IDV05S60CXKSA1 datasheet, IDV05S60CXKSA1 pinout, IDV05S60CXKSA1 application, or IDV05S60CXKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, 50 V/ns dv/dt ruggedness, 44 A surge rating at 25 °C, and isolated TO-220 FullPAK package with diffusion-soldered chip-to-leadframe interface for optimized thermal performance.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery losses and associated EMI. Its capacitive switching behavior is defined by Q_C = 12 nC (at V_R = 400 V, di_F/dt = 200 A/µs, T_j = 150 °C) and t_c < 10 ns, independent of load current, temperature, or di/dt.

The TO-220 FullPAK package integrates electrical isolation while maintaining R_thJC = 5 K/W - matching non-isolated TO-220 thermal performance via Infineon's diffusion soldering process. It supports mounting with M2.5 screws (50 Ncm torque) and wave soldering only on leads (260 °C, 10 s at 1.6 mm from case).

Key Specifications

Pinout & Package

Package: PG-TO220 FullPAK - fully isolated, lead-frame-mounted SiC die using diffusion soldering for minimal thermal interface resistance. Mounting via M2.5 screws (50 Ncm torque); wave soldering permitted only on leads (260 °C, 10 s at 1.6 mm from case).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05060E and STPSC5H065, IDV05S60CXKSA1 uniquely combines internal isolation, 600 V rating, and diffusion-soldered thermal performance - making it optimal for certified industrial PFC and solar modules where safety and thermal predictability are co-constrained.

Availability

IDV05S60CXKSA1 is available at Aetrix Electronics and suitable for CCM PFC boost converters, solar inverter DC-link stages, motor drive freewheeling paths, and UPS output rectification requiring stable component supply across extended product lifecycles.

Supply support for IDV05S60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDV05S60CXKSA1 belongs to the 2nd Generation thinQ!™ SiC Schottky Diode family, engineered specifically for high-frequency, high-temperature power conversion in industrial PFC, solar, and UPS systems where zero-recovery behavior and certified isolation are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDV05S60CXKSA1 is rated for continuous operation up to 175 °C junction temperature, validated per JEDEC JESD22-A108. This enables deployment in sealed, fanless enclosures such as outdoor solar inverters and industrial UPS systems where ambient temperatures exceed 70 °C.

Does this diode require a gate resistor or snubber network?

No - as a majority-carrier SiC Schottky diode, IDV05S60CXKSA1 exhibits no reverse recovery charge or minority carrier tail current. Its purely capacitive turn-off behavior (Q_C = 12 nC, t_c < 10 ns) eliminates the need for snubbers or gate resistors typically used with Si fast recovery diodes in high-dv/dt environments.

Can the isolated tab (Pin 3) be electrically connected to system ground?

Yes - Pin 3 is an electrically isolated metal tab designed for mechanical mounting and thermal transfer. It may be connected to system ground, left floating, or tied to a defined potential depending on isolation requirements. Its isolation voltage rating exceeds 2500 V_RMS, supporting reinforced insulation per IEC 60950-1 in PFC and UPS applications.

How does the diffusion soldering process improve thermal performance over standard soldering?

Diffusion soldering creates a void-free, high-conductivity metallurgical bond between the SiC die and copper leadframe, reducing interfacial thermal resistance. This achieves R_thJC = 5 K/W in the isolated FullPAK - matching non-isolated TO-220 performance and eliminating the typical 20–30% thermal penalty of conventional isolation methods like ceramic substrates or insulating washers.