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Home > Products  > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
UGF12JDH

UGF12JDH

DIODE GEN PURP 600V 12A ITO220AC

Taiwan Semiconductor Corporation

 1,000 0.00
RFQ
UGF12JDH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 600 V 12A 3.1 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 500 nA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 175°C
VS-3C04EV07T-M3/I

VS-3C04EV07T-M3/I

SIC-G3-SLIMDPAK 2L

Vishay General Semiconductor - Diodes Division

 4,120 0.00
RFQ
VS-3C04EV07T-M3/I

Datasheet

 		eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 175pF @ 1V, 1MHz - - Surface Mount SlimDPAK -55°C ~ 175°C
C3D03065E-TR

C3D03065E-TR

DIODE SCHOTTKY 650V 11A TO252-2

Wolfspeed, Inc.

 2,450 0.00
RFQ
C3D03065E-TR

Datasheet

 		Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.8 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 155pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
RR601BGE4STL

RR601BGE4STL

DIODE GEN PURP 400V 6A TO252GE

Rohm Semiconductor

 1,485 0.00
RFQ
RR601BGE4STL

Datasheet

 		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 400 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - - - Surface Mount TO-252GE 150°C
YQ10RSM10SDTFTL1

YQ10RSM10SDTFTL1

TRENCH MOS STRUCTURE, 100V, 10A,

Rohm Semiconductor

 3,675 0.00
RFQ
YQ10RSM10SDTFTL1

Datasheet

 		- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 10A 670 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V - Automotive AEC-Q101 Surface Mount TO-277A 150°C
SBR12U45LH1-13R

SBR12U45LH1-13R

DIODE SBR 45V 12A POWERDI5SP

Diodes Incorporated

 5,980 0.00
RFQ
SBR12U45LH1-13R

Datasheet

 		SBR® PowerDI™ 5SP Tape & Reel (TR) Active Super Barrier 45 V 12A 500 mV @ 12 A Standard Recovery >500ns, > 200mA (Io) - 300 µA @ 45 V - - - Surface Mount PowerDI5SP™ -65°C ~ 150°C
NRTS30100MFST3G

NRTS30100MFST3G

DIODE SCHOTTKY 100V 30A 5DFN

onsemi

 4,770 0.00
RFQ
NRTS30100MFST3G

Datasheet

 		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 100 V 30A 760 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 2540pF @ 1V, 1MHz - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
RB218RSM10STL1

RB218RSM10STL1

100V 20A, TO-277A, ULTRA LOW I

Rohm Semiconductor

 4,000 0.00
RFQ
RB218RSM10STL1

Datasheet

 		- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 20A 880 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - - - Surface Mount TO-277A 175°C
RB208RSM10STL1

RB208RSM10STL1

100V 15A, TO-277A, ULTRA LOW SUB

Rohm Semiconductor

 4,000 0.00
RFQ
RB208RSM10STL1

Datasheet

 		- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 15A 850 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 5.2 µA @ 100 V - - - Surface Mount TO-277A 175°C
ESW6006

ESW6006

DIODE GEN PURP 600V 60A TO247

Diotec Semiconductor

 444 0.00
RFQ
ESW6006

Datasheet

 		- TO-247-2 Tube Active Standard 600 V 60A 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 50 µA @ 600 V - - - Through Hole TO-247 -50°C ~ 175°C
1N914UR/TR

1N914UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

 104 0.00
RFQ
1N914UR/TR

Datasheet

 		- DO-213AA Tape & Reel (TR) Active Standard 75 V 200mA 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V 4pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
P2500W

P2500W

DIODE AVALANCHE 1600V 25A P600

Diotec Semiconductor

 266 0.00
RFQ
P2500W

Datasheet

 		- P600, Axial Cut Tape (CT) Active Avalanche 1600 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1600 V - - - Through Hole P-600 -50°C ~ 175°C
VS-10ETS10STRR-M3

VS-10ETS10STRR-M3

DIODE GEN PURP 1KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

 7,970 0.00
RFQ
VS-10ETS10STRR-M3

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1000 V 10A 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1000 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-10ETF12STRL-M3

VS-10ETF12STRL-M3

DIODE GEN PURP 1.2KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

 6,548 0.00
RFQ
VS-10ETF12STRL-M3

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 10A 1.33 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 310 ns 100 µA @ 1200 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VB20150SG-E3/8W

VB20150SG-E3/8W

DIODE SCHOTTKY 150V 20A TO263AB

Vishay General Semiconductor - Diodes Division

 5,825 0.00
RFQ
VB20150SG-E3/8W

Datasheet

 		TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 150 V 20A 1.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 150 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
P2500T

P2500T

DIODE AVALANCHE 1300V 25A P600

Diotec Semiconductor

 936 0.00
RFQ
P2500T

Datasheet

 		- P600, Axial Cut Tape (CT) Active Avalanche 1300 V 25A 1.1 V @ 25 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1300 V - - - Through Hole P-600 -50°C ~ 175°C
TRS4V65H,LQ

TRS4V65H,LQ

G3 SIC-SBD 650V 4A DFN8X8

Toshiba Semiconductor and Storage

 4,648 0.00
RFQ
TRS4V65H,LQ

Datasheet

 		- 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.34 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 263pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
DSC06A065D1-13

DSC06A065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

 2,117 0.00
RFQ
DSC06A065D1-13

Datasheet

 		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.5 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 650 V 278pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
SFAF1604GH

SFAF1604GH

35NS, 16A, 200V, SUPER FAST RECO

Taiwan Semiconductor Corporation

 1,000 0.00
RFQ
SFAF1604GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 130pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
VS-C4PH3006L-N3

VS-C4PH3006L-N3

DIODE GEN PURP 600V 15A TO247AD

Vishay General Semiconductor - Diodes Division

 496 0.00
RFQ
VS-C4PH3006L-N3

Datasheet

 		FRED Pt® TO-247-3 Tube Active Standard 600 V 15A 1.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 15 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
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