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Diodes Incorporated SBR12U45LH1-13R

Part No.:
SBR12U45LH1-13R
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
PowerDI™ 5SP
Datasheet:
AetrixSBR12U45LH1-13R.pdf
Description:
DIODE SBR 45V 12A POWERDI5SP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,980

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Product details

Overview

SBR12U45LH1-13R from Diodes Incorporated is a 12A Super Barrier Rectifier (SBR®) in POWERDI®5SP-B package, rated for 45V peak repetitive reverse voltage, 0.38V typical forward voltage at 12A/125°C, and 0.3mA max reverse leakage at 45V/125°C; designed specifically as a bypass diode in photovoltaic module strings to prevent hot-spot damage under partial shading.

For engineers reviewing the SBR12U45LH1-13R datasheet, SBR12U45LH1-13R pinout, SBR12U45LH1-13R application, or SBR12U45LH1-13R equivalent, key selection criteria include ultra-low VF for thermal efficiency in confined solar glass assemblies, +200°C junction-rated thermal robustness, low-profile 0.75mm height, and protruding 7.6mm leads enabling direct integration into laminated panel interconnects.

Technical Context

This SBR employs patented Super Barrier Rectifier technology-distinct from Schottky or standard PN junctions-to achieve lower forward voltage than conventional Schottkys while maintaining superior high-temperature reverse leakage performance. Its architecture enables stable operation up to +200°C junction temperature with guaranteed 2-hour endurance.

The device operates under DC blocking conditions up to 45V, supports 12A average rectified current with 300A non-repetitive surge capability, and exhibits <0.3mA IR at full VRRM and +125°C-critical for minimizing power loss in series-connected solar strings where reverse bias across shaded cells drives leakage current.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM45 V - Maximum DC blocking voltage applied across cathode-anode without breakdown; defines safe operating limit in reverse-biased bypass configuration.
IO(AV)12 A - Continuous forward current rating at TA=25°C on FR-4 PCB; derates to ~6.5A at +100°C ambient per Figure 5.
VF(typ)0.38 V @ 12A, +125°C - Ultra-low forward drop minimizes I²R heating in high-current solar string bypass paths.
IR(max)0.3 mA @ 45V, +125°C - Very low reverse leakage preserves panel output under partial shading and high-temperature operation.
TJ(max)+200°C - Selectively rated junction temperature ensures reliability during sustained thermal stress in enclosed PV modules.
RθJA66 °C/W - Thermal resistance from junction to ambient on standard 2oz copper FR-4; informs heatsinking requirements in compact layouts.
PackagePOWERDI®5SP-B - Surface-mount, low-profile (0.75mm), lead-protruding package optimized for lamination into solar glass panels.

Pinout & Package

Encapsulated in POWERDI®5SP-B: surface-mount, single-row, 2-terminal package with cathode bar marking on top surface and cathode notch on lead; overall dimensions 4.40 × 21.0 × 0.75 mm (W × L × H), featuring 7.6mm protruding leads for mechanical anchoring in laminated glass.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to negative side of shaded solar cell substring; conducts current around blocked cell during reverse bias.
CathodeForward current exit / reverse voltage referenceMarked with bar and notch; ties to positive rail of substring, defining polarity-sensitive placement in series string layout.

Key Features

FeatureDesign Value
Ultra-low VF at high temperature0.38 V @ 12A/+125°C reduces forward conduction loss by >15% vs. comparable Schottkys, directly improving system-level energy harvest.
+200°C junction ratingGuaranteed 2-hour operation at +200°C enables reliable use in thermally constrained PV module interiors where ambient exceeds +100°C.
Low-profile, lead-protruding package0.75mm height + 7.6mm lead length allows secure embedding between solar glass layers without air gaps or delamination risk.
Low reverse leakage at elevated temperature0.3 mA @ 45V/+125°C prevents excessive power dissipation and localized heating in bypass mode under real-world field conditions.

Applications

Photovoltaic Bypass ProtectionSolar Panel String Management

Use Scenario: Installed across individual solar cells or substrings within crystalline silicon modules to shunt current when cells are shaded or damaged.

IC Role / Device Role / Timing Role: Discrete power diode performing unidirectional current steering during reverse-bias fault conditions.

Use Value: Prevents hot-spot formation and permanent cell degradation by limiting reverse voltage across shaded cells to ≤45V while sustaining 12A bypass current.

Use Scenario: Integrated into junction boxes of commercial rooftop and utility-scale PV panels for redundancy across multiple parallel substrings.

IC Role / Device Role / Timing Role: High-reliability discrete rectifier providing fail-safe current path during mismatched illumination or thermal gradients.

Use Value: Maintains string-level power output under partial shading with minimal self-heating due to 0.38V VF and +200°C TJ rating.

High-Temperature Solar EnclosuresLaminated Glass-Integrated PV Modules

Use Scenario: Deployed in desert or rooftop installations where ambient temperatures exceed +85°C and module backsheet temperatures reach +120°C.

IC Role / Device Role / Timing Role: Thermally robust discrete diode ensuring long-term stability in harsh thermal cycling environments.

Use Value: Eliminates premature failure from thermal runaway thanks to <0.3mA IR at +125°C and validated +200°C short-duration operation.

Use Scenario: Embedded directly between front and rear glass layers in bifacial or building-integrated PV (BIPV) panels.

IC Role / Device Role / Timing Role: Mechanically anchored discrete rectifier with protruding leads enabling solder-free compression bonding during lamination.

Use Value: Enables hermetic integration without voids or delamination, leveraging 0.75mm profile and 7.6mm lead length for structural retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar solar bypass diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SBRT12U45-13Same SBR technology and electrical specs, but in TO-277A package (3.5mm height); higher RθJA (80°C/W).Requires external heatsinking in confined spaces; unsuitable for laminated glass integration due to height.Select when board-level mounting with thermal vias is preferred over embedded lamination.
MBR1245CTGStandard Schottky; VF = 0.55V @ 12A/25°C, IR = 1.5mA @ 45V/125°C; no +200°C rating.Higher conduction loss and leakage reduce energy yield in high-temp shading; limited to lower-temperature enclosures.Choose only for cost-sensitive, non-laminated, low-ambient-temperature deployments with relaxed thermal margins.

Compared with SBRT12U45-13 and MBR1245CTG, the SBR12U45LH1-13R uniquely combines ultra-low VF, sub-mA high-temp leakage, +200°C capability, and laminable 0.75mm profile-making it the only option qualified for next-generation thin-glass and BIPV bypass integration.

Availability

SBR12U45LH1-13R is available at Aetrix Electronics and suitable for photovoltaic bypass protection, solar panel string management, and high-temperature solar enclosures requiring stable component supply and long-term field reliability.

Supply support for SBR12U45LH1-13R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The SBR® product line delivers high-efficiency, high-reliability rectifiers using proprietary barrier technology-specifically engineered for solar bypass, OR-ing, and high-temperature power conversion applications where low VF and low IR are critical.

FAQ

What is the maximum continuous forward current rating for SBR12U45LH1-13R at +100°C ambient?

At +100°C ambient temperature on a standard FR-4 PCB with 2oz copper, the SBR12U45LH1-13R is rated for approximately 6.5A average forward current, based on the derating curve in Figure 5 of DS36233 Rev. 7–2. This reflects thermal limitation from its 66°C/W junction-to-ambient resistance and +200°C max junction temperature capability.

Can SBR12U45LH1-13R be used in place of a standard Schottky diode in solar bypass applications?

Yes-SBR12U45LH1-13R replaces standard Schottkys with measurable advantages: 0.38V VF at 12A/125°C versus typical 0.55–0.65V, and 0.3mA IR at 45V/125°C versus 1–3mA. These differences directly reduce power loss and hot-spot risk in real-world solar string operation, especially under elevated temperature and partial shading.

Is the POWERDI®5SP-B package compatible with standard reflow soldering profiles?

Yes-the POWERDI®5SP-B package is qualified for standard lead-free reflow profiles (J-STD-020 Level 1). Its molded plastic case meets UL 94V-0 flammability rating, and the device has been characterized for thermal cycling reliability in PV module lamination processes, including exposure to 150°C pre-heat and 240°C peak reflow zones.

Does SBR12U45LH1-13R meet halogen-free and RoHS requirements?

Yes-SBR12U45LH1-13R features a lead-free finish and complies with RoHS 2 (2011/65/EU), containing <900ppm bromine, <900ppm chlorine (<1500ppm total Br+Cl), and <1000ppm antimony compounds. It is certified "Green" per Diodes Incorporated's environmental policy and carries appropriate marking per JEDEC standards.

SBR12U45LH1-13R Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
SBR®
Package/Case:
PowerDI™ 5SP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Super Barrier
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 12 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 45 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI5SP™
Operating Temperature - Junction:
-65°C ~ 150°C

SBR12U45LH1-13R FAQ

1.How can I place an order for SBR12U45LH1-13R through Aetrix?

Please submit a Request for Quotation (RFQ) for SBR12U45LH1-13R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SBR12U45LH1-13R reliable?

The price and inventory of SBR12U45LH1-13R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SBR12U45LH1-13R is usually 5 days.

3.What payment methods are accepted for SBR12U45LH1-13R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SBR12U45LH1-13R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SBR12U45LH1-13R?

SBR12U45LH1-13R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SBR12U45LH1-13R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SBR12U45LH1-13R?

For technical support, including SBR12U45LH1-13R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SBR12U45LH1-13R requirements.

6.How does Aetrix verify that SBR12U45LH1-13R is sourced from the original manufacturer or authorized distributors?

All SBR12U45LH1-13R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SBR12U45LH1-13R meets industry standards.

7.What is the process for return or replacement of SBR12U45LH1-13R?

All SBR12U45LH1-13R units undergo pre-shipment inspection (PSI). If there is an issue with SBR12U45LH1-13R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SBR12U45LH1-13R part is unused and in its original packaging.

Return procedure for SBR12U45LH1-13R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SBR12U45LH1-13R Tags

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