Toshiba Semiconductor and Storage TRS4V65H,LQ

Overview

TRS4V65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 4 A silicon carbide Schottky barrier diode optimized for high-efficiency power conversion in PFC stages and DC-DC converters. It features a typ. forward voltage of 1.2 V at 4 A, typ. reverse current of 0.6 µA at 650 V/150°C, and low total capacitive charge of 12 nC, enabling reduced switching losses in hard-switched topologies.

For engineers reviewing the TRS4V65H datasheet, TRS4V65H pinout, TRS4V65H application, or TRS4V65H equivalent, key selection criteria include its DFN8x8 package with heatsink cathode, junction-to-case thermal resistance of 3.0 °C/W, and third-generation SiC chip design supporting operation up to 175°C junction temperature in solar inverters and UPS systems.

Technical Context

The TRS4V65H employs a third-generation SiC Schottky architecture with no minority-carrier injection, eliminating reverse recovery charge and enabling zero Qrr. Its low VF and low Qc are co-optimized for high-frequency, high-voltage rectification where conduction and switching losses must both be minimized.

Thermal performance is defined by a 3.0 °C/W junction-to-case resistance (Tc = 25°C), with rated continuous forward current of 4 A at Tc = 155°C and non-repetitive surge capability of 13 A (10 ms half-sine). The device operates over -55°C to +175°C storage and junction temperature ranges.

Key Specifications

Pinout & Package

TRS4V65H is housed in a surface-mount DFN8x8 package (Toshiba designation: 2-8T1A), weighing 0.175 g. The exposed cathode pad (Pin 5) serves as the primary thermal path to the PCB heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC6H065DL and IXYS DSSK60-06A, the TRS4V65H offers superior high-frequency efficiency due to lower Qc and smaller DFN8x8 footprint, while delivering best-in-class thermal resistance for surface-mount power density-ideal for space-constrained 1–5 kW converters.

Availability

TRS4V65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for TRS4V65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade robustness.

The TRS4V65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature power conversion in renewable energy and industrial UPS systems.

FAQ

What is the maximum junction temperature rating for the TRS4V65H?

The TRS4V65H has a maximum junction temperature (Tj) rating of 175°C, verified per Toshiba's Absolute Maximum Ratings table. This rating supports continuous operation in thermally demanding environments such as enclosed solar inverters or high-ambient UPS cabinets. Derating curves in the datasheet confirm stable electrical performance up to this limit when thermal design maintains Tj ≤ 175°C. The TRS4V65H must not exceed this value under any operating condition.

Does the TRS4V65H have a specified reverse recovery charge (Qrr)?

No-the TRS4V65H is a silicon carbide Schottky barrier diode and exhibits no reverse recovery charge (Qrr ≈ 0). Unlike silicon PN diodes, it lacks minority carrier storage, resulting in zero reverse recovery time and associated switching loss. This characteristic is intrinsic to its SiC Schottky structure and is confirmed across all operating conditions in the TRS4V65H datasheet.

How is thermal management implemented in the TRS4V65H package?

The TRS4V65H uses a DFN8x8 package with Pin 5 as an exposed cathode pad that serves as the primary thermal interface. With a guaranteed Rth(j-c) of 3.0 °C/W (Tc = 25°C), effective cooling requires direct soldering of this pad to a large, low-thermal-resistance PCB copper area or external heatsink. Thermal vias beneath the pad and adequate copper thickness are essential to realize the rated thermal performance in actual layouts.

What are the absolute maximum ratings for repetitive peak reverse voltage and forward DC current?

The TRS4V65H has an absolute maximum repetitive peak reverse voltage (VRRM) of 650 V and a forward DC current (IF(DC)) rating of 4 A at case temperature (Tc) = 155°C. These values define the device's safe operating envelope under continuous conditions. Exceeding either rating-even momentarily-may cause irreversible degradation or failure. Both parameters are tested and guaranteed per Toshiba's Rev. 2.0.A datasheet.

Is the TRS4V65H RoHS compliant and halogen-free?

Yes-the TRS4V65H complies with the EU RoHS Directive and is halogen-free, as confirmed by Toshiba's environmental compliance documentation. Material declarations and test reports are available upon request through Aetrix Electronics' technical support team. Customers must verify final compliance status against their specific regional regulatory requirements before design-in.