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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-8ETL06STRRHM3 DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division	782	RFQ	Datasheet	FRED Pt®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	8A	1.05 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 175°C
RB218RSM10STFTL1 100V 20A, TO-277A, ULTRA LOW SBD Rohm Semiconductor	4,000	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	20A	880 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5.2 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
IDW15E65D2FKSA1 DIODE GP 650V 30A TO247-3-1 Infineon Technologies	219	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	30A	2.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	47 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
SF2004PTH DIODE GEN PURP 200V 20A TO247AD Taiwan Semiconductor Corporation	900	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	20A	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004PT DIODE GEN PURP 200V 20A TO247AD Taiwan Semiconductor Corporation	897	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	200 V	20A	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PT DIODE GEN PURP 300V 20A TO247AD Taiwan Semiconductor Corporation	892	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	300 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 300 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PTH DIODE GEN PURP 300V 20A TO247AD Taiwan Semiconductor Corporation	890	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	300 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 300 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PTH DIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation	900	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	20A	1.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2008PT DIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation	899	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	20A	1.9 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SDS065J008N3-ISATH DIODE 650V-8A TO220N-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO220N	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Through Hole	TO-220N-2L	-55°C ~ 175°C
BSDH10G65E2 DIODE SIC 650V 10A TO220-2 Bourns Inc.	2,873	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	323pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DSC08A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 650 V	348pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
DSC10C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	2,495	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	230 µA @ 650 V	348pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
RB078BM10SFHHTL 100V 5A, TO-252, ULTRA LOW IR SB Rohm Semiconductor	2,480	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	100 V	5A	740 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6.4 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	175°C
C3D04065E-TR DIODE SIL CARB 650V 13.5A TO252 Wolfspeed, Inc.	1,970	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	251pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
PSDH3060S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,434	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
C6D04065E-TR SIC, SCHOTTKY DIODE, 4A, 650V, T Wolfspeed, Inc.	892	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	256pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
STW80300C 300V, 80A, TO-247AD, ULTRA LOW V SMC Diode Solutions	1,740	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
CRU24715-600 SL RECTIFIER-ULTRA FAST <100 Central Semiconductor Corp	360	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-3C06EV07T-M3/I SIC-G3-SLIMDPAK 2L Vishay General Semiconductor - Diodes Division	4,377	RFQ	Datasheet	eSMP®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	47 µA @ 650 V	255pF @ 1V, 1MHz	-	-	Surface Mount	SlimDPAK	-55°C ~ 175°C

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