Diodes Incorporated DSC10C065D1-13

Overview

DSC10C065D1 from Diodes Incorporated is a silicon carbide Schottky diode rated for 650 V peak repetitive reverse voltage, 10 A average rectified output current, and 1.7 V maximum forward voltage at 10 A and +25°C. It serves as a high-efficiency rectifier or freewheeling diode in power conversion stages of industrial motor drives and UPS systems.

For engineers reviewing the DSC10C065D1 datasheet, DSC10C065D1 pinout, DSC10C065D1 application, or DSC10C065D1 equivalent, key selection criteria include its 1.2 µA typical reverse leakage at 650 V/+25°C, 3 °C/W junction-to-case thermal resistance, fast reverse recovery behavior, and TO252 (Type WX) package suitability for high-temperature switching topologies.

Technical Context

This SiC Schottky diode operates with zero minority-carrier injection, eliminating reverse recovery charge (Qrr) and enabling high-frequency operation without tail current. Its positive temperature coefficient on VF ensures inherent current sharing in parallel configurations.

Designed for continuous operation up to +175°C junction temperature, it delivers stable leakage performance-230 µA at 650 V and +175°C-and supports surge currents up to 47 A (10 ms half-sine), making it suitable for transient-heavy industrial power inverters and PFC boost stages.

Key Specifications

Pinout & Package

Package: TO252 (Type WX), surface-mount, 3-terminal plastic molded package with exposed cathode pad for thermal and electrical performance. Dimensions per Diodes DS45172 Rev. 5–2: D = 6.10 mm, E = 6.60 mm, H = 10.10 mm, L = 1.50 mm, b3 = 5.33 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D10120D and NDSH10170A, the DSC10C065D1 offers balanced VF/IR/thermal performance in TO252 packaging, with proven manufacturability in high-volume industrial SMT lines and documented reliability at 175°C junction temperature.

Availability

DSC10C065D1 is available at Aetrix Electronics and suitable for power factor correction, industrial motor drivers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for DSC10C065D1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DSC10C065D1 belongs to Diodes' high-voltage SiC Schottky diode product line, engineered specifically for efficiency-critical 650 V power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum junction temperature rating for the DSC10C065D1?

The DSC10C065D1 is rated for continuous operation up to +175°C junction temperature, verified per JESD-51 thermal testing with aluminum fin heatsink (100 mm × 42 mm × 26 mm). Derating begins above +25°C case temperature per Figure 1 in DS45172 Rev. 5–2, reaching 10 A at TC = +25°C and 0 A at TC = +175°C.

Does the DSC10C065D1 require a gate resistor or snubber circuit?

No. As a majority-carrier SiC Schottky diode, it exhibits zero reverse recovery charge (Qrr) and no minority-carrier tail current. This eliminates voltage overshoot and ringing during turn-off, removing the need for snubbers or gate resistors typically required with silicon fast recovery diodes in high-dV/dt applications.

How does the DSC10C065D1 perform at elevated temperatures?

At +175°C junction temperature, VF increases to 2.5 V (max) at 10 A, while IR rises to 230 µA at 650 V. Its positive VF temperature coefficient ensures stable current sharing in parallel configurations, and RθJC remains 3 °C/W-enabling predictable thermal design even under sustained high-temperature operation.

Is the DSC10C065D1 qualified for automotive applications?

The DSC10C065D1 is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing-available only upon direct engagement with their automotive team. Standard DSC10C065D1 is intended for industrial, computing, and renewable energy applications.