Taiwan Semiconductor Corporation SF2008PT

Overview

SF2008PT from Taiwan Semiconductor is a 600 V, 20 A dual-die super fast rectifier in TO-247AD (TO-3P) package, featuring 1.900 V forward voltage at 20 A and 35 ns reverse recovery time. It serves as a high-efficiency freewheeling or snubber diode in high-voltage DC/DC converters and switching inverters.

For engineers reviewing the SF2008PT datasheet, SF2008PT pinout, SF2008PT application, or SF2008PT equivalent, key selection criteria include its 600 V repetitive peak reverse voltage, dual-center-tap configuration, low thermal resistance (2.5 °C/W), AEC-Q101 qualification option (SF2008PTH), and suitability for automotive-grade power conversion designs requiring robust surge handling (180 A IFSM).

Technical Context

The SF2008PT integrates two independent silicon die in a single TO-247AD package with positive center-tap configuration, enabling dual-channel rectification without external interconnection. Its glass-passivated junctions support operation up to 150 °C junction temperature and deliver stable reverse leakage (<400 µA at 125 °C) under high-voltage stress.

Designed for high-frequency switching topologies, the device achieves 35 ns reverse recovery time with controlled soft-recovery behavior, minimizing EMI generation during commutation. Its low R_θJC of 2.5 °C/W enables direct heatsink mounting for sustained 20 A conduction without derating below 100 °C case temperature.

Key Specifications

Pinout & Package

Package: TO-247AD (TO-3P), 3-terminal molded plastic case with matte tin-plated leads, UL 94V-0 rated compound, polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH30L06TV1 and IXYS MUR2060CT, the SF2008PT offers identical voltage/current ratings and recovery speed but uniquely combines dual-die integration, lowest V_F (1.900 V), and best thermal resistance (2.5 °C/W) in a single TO-247AD footprint-enabling compact, high-efficiency designs without layout compromise.

Availability

SF2008PT is available at Aetrix Electronics and suitable for DC/DC converters, switching inverters, and lighting ballasts requiring stable component supply, long-lifecycle support, and automotive-qualified alternatives (SF2008PTH).

Supply support for SF2008PT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and automotive markets since 1979.

The SF200xPT series targets high-reliability power conversion systems demanding fast recovery, high voltage blocking, and rugged packaging-designed specifically for next-generation SMPS, EV charging modules, and renewable energy inverters.

FAQ

What is the maximum junction temperature rating for the SF2008PT?

The SF2008PT has a maximum junction temperature (T_J) rating of +150 °C, with operational storage temperature ranging from −55 to +150 °C. This rating allows reliable operation in under-hood automotive environments and high-ambient industrial settings. Thermal design must ensure junction temperature remains within this limit using the specified R_θJC of 2.5 °C/W and appropriate heatsinking. The SF2008PT datasheet confirms this value across all test conditions and versions.

Does the SF2008PT have AEC-Q101 qualification?

The SF2008PT itself is not AEC-Q101 qualified; however, the pin-compatible variant SF2008PTH is explicitly qualified per AEC-Q101 Rev D. That version uses identical die and TO-247AD packaging but undergoes additional stress testing including temperature cycling, HTRB, and ESD. For automotive applications requiring qualification, SF2008PTH-not SF2008PT-is the designated part. Both share identical electrical specifications and thermal performance.

What is the forward voltage of the SF2008PT at 10 A and 25 °C?

The SF2008PT exhibits a typical forward voltage (V_F) of 1.700 V at 10 A and 25 °C, as confirmed in the Electrical Specifications table of the official Taiwan Semiconductor datasheet (Version I2103). This value applies per diode under pulsed test conditions (PW = 0.3 ms). At full-rated 20 A and 25 °C, V_F rises to 1.900 V, reflecting its low-loss silicon design optimized for high-current switching applications.

How does the SF2008PT differ from the SF2001PT in terms of voltage rating?

The SF2008PT is rated for 600 V repetitive peak reverse voltage (V_RRM), whereas the SF2001PT is rated for 50 V V_RRM. This 12× voltage difference reflects distinct silicon process optimization: SF2008PT uses thicker drift regions and enhanced edge termination to sustain higher electric fields. All other parameters-including I_F (20 A), I_FSM (180 A), package (TO-247AD), and t_rr (35 ns)-are identical across the SF2001PT–SF2008PT family, enabling consistent thermal and layout design across voltage grades.

Is the SF2008PT suitable for use in snubber circuits?

Yes, the SF2008PT is explicitly recommended for snubber applications per Taiwan Semiconductor's official documentation. Its 600 V V_RRM, 35 ns t_rr, and low stored charge enable fast, low-loss clamping of voltage spikes across switching devices. In RCD snubbers, it handles transient energy without significant reverse recovery oscillation. The SF2008PT's glass-passivated junction also ensures stability under repeated high-dV/dt stress, making it suitable for high-reliability snubber networks in industrial and automotive power systems.