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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
YQ20NL10SEFHTL TRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	20A	860 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	150°C
YQ30NL10SDFHTL TRENCH MOS STRUCTURE, 100V, 30A Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	30A	990 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	95 µA @ 100 V	-	Automotive	AEC-Q101	Surface Mount	TO-263L	150°C
S6D10065I DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	1,000	RFQ	Datasheet	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	33A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	769pF @ 0V, 1MHz	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
S6D10065D1 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	280	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	33A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	769pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SDS065J012C3-ISATH DIODE 650V-12A TO220-2L Luminus Devices Inc.	100	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	651pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
DSC10A065 SILICON CARBIDE RECTIFIER TO220A Diodes Incorporated	58	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 650 V	436pF @ 100mV, 1MHz	-	-	Through Hole	TO220AC (Type WX)	-55°C ~ 175°C
S3D15065F DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	100	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	-	-	-	-	-	-	-	-	-	-	Through Hole	ITO-220AC (TO-220-2F)	-
TRS10E65H,S1Q G3 SIC-SBD 650V 10A TO-220-2L Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
DSEP29-06B DIODE GEN PURP 600V 30A TO220AC IXYS	54	RFQ	Datasheet	HiPerFRED™	TO-220-2	Tube	Active	Standard	600 V	30A	2.52 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
FFSH2065B-F155 650V 20A SIC SBD GEN 1.5 onsemi	95	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	22.3A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SDS065J020C3-ISATH DIODE 650V-20A TO220-2L Luminus Devices Inc.	100	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
ADS120J005D3-ASARH DIODE 1200V-5A TO252-2L, AUTOMOT Luminus Devices Inc.	90	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	22A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	400pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-252-2L	-55°C ~ 175°C
VS-16F10 DIODE GEN PURP 100V 16A DO203AA Vishay General Semiconductor - Diodes Division	58	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	100 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
VS-16FR20 DIODE GEN PURP 200V 16A DO203AA Vishay General Semiconductor - Diodes Division	79	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	200 V	16A	1.23 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 200 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 175°C
ADS065J020H3-ASATH DIODE 650V-20A TO247-2L, AUTOMOT Luminus Devices Inc.	100	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247-2L	-55°C ~ 175°C
GP3D020A065B DIODE SIL CARB 650V 20A TO247-2 SemiQ	99	RFQ	Datasheet	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	835pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
VS-50PF40W DIODE GEN PURP 400V 50A DO203AB Vishay General Semiconductor - Diodes Division	56	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	50A	1.4 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
ADS065J020C3-ASATH DIODE 650V-20A TO220-2L, AUTOMOT Luminus Devices Inc.	100	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220-2L	-55°C ~ 175°C
ADS065J020E3-ASARH DIODE 650V-20A TO263-2L, AUTOMOT Luminus Devices Inc.	100	RFQ	-	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	650 V	20A	-	-	-	-	-	Automotive	-	Surface Mount	TO-263-2L	-
FFSB10120A DIODE SIL CARB 1.2KV 21A D2PAK-3 onsemi	80	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	21A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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