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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N5712UB/TR SMALL-SIGNAL SCHOTTKY Microchip Technology	100	RFQ	Datasheet	-	4-SMD, No Lead	Tape & Reel (TR)	Active	Schottky	16 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Surface Mount	UB	-65°C ~ 150°C
NVDSH50120C DIODE SIL CARB 1.2KV 53A TO247-2 onsemi	40	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	53A	1.75 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	3691pF @ 1V, 100kHz	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
245NQ400-1 400V, 240A, PRM1-1, POWER MODULE SMC Diode Solutions	27	RFQ	Datasheet	-	HALF-PAK	Bulk	Active	Standard	400 V	240A	1.5 V @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	30 µA @ 400 V	1350pF @ 5V, 1MHz	-	-	Chassis Mount	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
245NQ400R-1 POWER MODULE 240A, 400V, PRM1-1 SMC Diode Solutions	27	RFQ	Datasheet	-	HALF-PAK	Bulk	Active	Standard	400 V	240A	1.5 V @ 240 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	30 mA @ 400 V	1350pF @ 5V, 1MHz	-	-	Chassis Mount	PRM1-1 (Half Pak Module)	-55°C ~ 150°C
VS-182NQ030PBF DIODE SCHOTTKY 30V 180A D-67 Vishay General Semiconductor - Diodes Division	13	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Active	Schottky	30 V	180A	590 mV @ 180 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 mA @ 30 V	7700pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
1N4148UB2R/TR SIGNAL OR COMPUTER DIODE Microchip Technology	100	RFQ	Datasheet	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Standard	75 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	-	-	Surface Mount	UB2	-65°C ~ 200°C
IDYH25G200C5XKSA1 SIC DISCRETE Infineon Technologies	56	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	77A	1.75 V @ 25 A	-	-	375 µA @ 2000 V	1140pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
1N6642UB2R/TR SIGNAL OR COMPUTER DIODE Microchip Technology	100	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IDYH40G200C5XKSA1 SIC DISCRETE Infineon Technologies	66	RFQ	-	CoolSiC™	TO-247-4 Variant	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	114A	1.75 V @ 40 A	-	-	600 µA @ 2000 V	4550pF @ 1V, 100kHz	-	-	Through Hole	PG-TO247-U04	-55°C ~ 175°C
1N5819UB1 AEROSPACE 45 V POWER SCHOTTKY RE STMicroelectronics	17	RFQ	Datasheet	-	2-SMD, No Lead	Tray	Active	Schottky	45 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 45 V	70pF @ 5V, 1MHz	-	-	Surface Mount	2-LCCB	150°C
ND89N12KHPSA1 DIODE GEN PURP 1.2KV 89A PB20-1 Infineon Technologies	16	RFQ	Datasheet	-	Module	Tray	Active	Standard	1200 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1200 V	-	-	-	Chassis Mount	BG-PB20-1	-40°C ~ 135°C
ND89N16KHPSA1 DIODE GEN PURP 1.6KV 89A PB20-1 Infineon Technologies	11	RFQ	Datasheet	-	Module	Tray	Active	Standard	1600 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-	-	-	Chassis Mount	BG-PB20-1	-40°C ~ 135°C
D1800N48TVFXPSA1 DIODE GEN PURP 4.8KV 1800A Infineon Technologies	8	RFQ	Datasheet	-	DO-200AC, K-PUK	Tray	Active	Standard	4800 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4800 V	-	-	-	Clamp On	-	-40°C ~ 160°C
DZ1070N22KHPSA3 DIODE GP 2.2KV 1100A MODULE Infineon Technologies	2	RFQ	Datasheet	-	Module	Tray	Active	Standard	2200 V	1100A	1.11 V @ 3000 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 2200 V	-	-	-	Chassis Mount	Module	-40°C ~ 150°C
D4810N22TVFXPSA1 DIODE GEN PURP 2.2KV 4810A Infineon Technologies	3	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	2200 V	4810A	1.078 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 2200 V	-	-	-	Chassis Mount	-	-40°C ~ 150°C
D1131SH65TXPSA1 DIODE GEN PURP 6.5KV 1100A Infineon Technologies	2	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	6500 V	1100A	5.6 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 6500 V	-	-	-	Chassis Mount	-	0°C ~ 140°C
D1331SH45TXPSA1 DIODE GEN PURP 4.5KV 1710A Infineon Technologies	2	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	4500 V	1710A	4.2 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 4500 V	-	-	-	Chassis Mount	-	0°C ~ 140°C
D2700U45X122XOSA1 DIODE GP 4.5KV 2900A D12026K-1 Infineon Technologies	2	RFQ	Datasheet	-	DO-200AE	Tray	Active	Standard	4500 V	2900A	-	Standard Recovery >500ns, > 200mA (Io)	-	150 mA @ 4500 V	-	-	-	Chassis Mount	BG-D12026K-1	140°C (Max)
GS1G DIODE GEN PURP 400V 1A DO214AC SURGE	190	RFQ	Datasheet	-	DO-214AC, SMA	Bag	Active	Standard	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 400 V	12pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AC (SMA)	-55°C ~ 150°C
GS1M DIODE GEN PURP 1KV 1A DO214AC SURGE	155	RFQ	Datasheet	-	DO-214AC, SMA	Bag	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 1000 V	12pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AC (SMA)	-55°C ~ 150°C

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