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Microchip Technology 1N5712UB/TR
- Part No.:
- 1N5712UB/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- 4-SMD, No Lead
- Datasheet:
-
1N5712UB/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:100
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Product details
Overview
1N5712UB/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JANTXV level, rated for 16 V working peak reverse voltage, 75 mA average rectified output current, and 1.0 V forward voltage at 35 mA. It serves in high-reliability RF detector, sample-and-hold, and low-leakage clamping circuits across aerospace and defense systems.
For engineers reviewing the 1N5712UB/TR datasheet, 1N5712UB/TR pinout, 1N5712UB/TR application, or 1N5712UB/TR equivalent, key selection criteria include its 150 nA max reverse leakage at 16 V, 2.0 pF junction capacitance at 0 V, ceramic hermetic package, military-grade temperature range (–65 °C to +150 °C), and unidirectional polarity configuration.
Technical Context
This Schottky diode leverages platinum-silicon or similar low-barrier metallization to achieve fast switching with negligible minority-carrier storage-reverse recovery time is not specified but implied sub-nanosecond due to 100 ps effective minority carrier lifetime. Its ceramic package provides hermetic sealing and stable thermal resistance of 100 °C/W junction-to-solder pad.
The device operates as a unidirectional rectifier with gold-plated nickel terminals, marked per MIL-STD-130, and supports tape-and-reel delivery per EIA-418D. It is ESD-sensitive (Class 1) and RoHS-compliant by design, with no halogenated flame retardants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16 V - Maximum continuous reverse voltage before significant leakage or breakdown in normal operation. |
| IO (avg) | 75 mA - Sustained DC output current capability with 180° conduction angle and 50/60 Hz sine input. |
| VF @ IF | 1.0 V @ 35 mA - Forward drop defining power loss and signal threshold in detector/clamp applications. |
| IR @ VR | 150 nA @ 16 V - Low leakage critical for precision analog sampling and high-impedance bias networks. |
| CT @ 0 V | 2.0 pF - Junction capacitance limiting high-frequency response; enables >1 GHz small-signal detection. |
| TJ Range | –65 °C to +150 °C - Full military temperature range enabling deployment in extreme environmental conditions. |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 2-terminal unidirectional configuration. Dimensions: 2.92–3.25 mm length × 2.16–2.74 mm width × 1.17–1.42 mm height. Gold-plated nickel terminals; metallized base pad (Pad 1) and top electrode (Pad 2) form anode-cathode pair.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode | Primary current entry point; metallized ceramic base used for thermal and electrical connection. |
| Pad 2 (Top Electrode) | Cathode | Top-surface terminal; configured for low-inductance routing in RF detector layouts. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 Qualified | JANTXV-level screening ensures burn-in, temperature cycling, and hermeticity testing for mission-critical use. |
| Low Reverse Leakage | 150 nA max at VRWM enables stable DC biasing in high-Z sample-and-hold hold capacitors. |
| Ceramic Hermetic Package | Prevents moisture ingress and parameter drift over decades-critical for long-life space payloads. |
| Fast Switching | 100 ps effective minority carrier lifetime supports sub-ns transient response in pulse detection. |
Applications
| Radar Pulse Detection | RF Signal Sampling |
|---|---|
Use Scenario: Detecting short-duration RF pulses in airborne radar receivers operating at X-band frequencies. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF envelope to baseband DC pulse. Use Value: 2.0 pF capacitance and 150 nA leakage preserve pulse fidelity and minimize false-trigger risk in low-duty-cycle systems. | Use Scenario: Capturing instantaneous RF amplitude in wideband electronic warfare (EW) receivers. IC Role / Device Role / Timing Role: Peak-sampling diode in track-and-hold front-end with <1 ns rise time requirement. Use Value: Sub-nanosecond effective switching and 1.0 V VF at 35 mA enable accurate amplitude capture without droop or distortion. |
| High-Reliability Clamping | Spacecraft Power Sequencing |
Use Scenario: Protecting analog sensor inputs from ESD and transient overvoltage in avionics data acquisition units. IC Role / Device Role / Timing Role: Low-leakage clamp diode shunting transients to rail while preserving DC offset integrity. Use Value: 150 nA IR at 16 V prevents loading of high-impedance sensor bridges during quiescent operation. | Use Scenario: Controlling power-up sequencing of radiation-hardened FPGAs in LEO satellite subsystems. IC Role / Device Role / Timing Role: Precision voltage reference clamp stabilizing reset timing thresholds across –65 °C to +125 °C. Use Value: Stable VF and TJ range compliance ensure deterministic reset behavior under thermal vacuum cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UR-1 | Same electrical specs; DO-213AA plastic package instead of ceramic UB; no MIL qualification. | Lacks hermetic seal and MIL-PRF-19500 screening-unsuitable for space or extended-life military use. | Select only for commercial-grade cost-sensitive RF detector designs where long-term reliability is secondary. |
| SM1201-001 | 16 V VRWM, 100 mA IO, 0.45 V VF @ 10 mA; ceramic package; MIL-PRF-19500/513 qualified (Schottky family). | Higher current rating and lower VF improve efficiency in higher-power sampling circuits; same hermetic reliability. | Preferred when system requires >75 mA average current or tighter forward voltage tolerance. |
Compared with 1N5712UR-1 and SM1201-001, the 1N5712UB/TR delivers JANTXV-level screening and ceramic hermeticity essential for flight-critical functions, while maintaining identical core electrical performance-making it the sole choice for programs requiring MIL-qualified traceability and zero moisture permeability.
Availability
1N5712UB/TR is available at Aetrix Electronics and suitable for radar pulse detection, RF signal sampling, and high-reliability clamping requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for 1N5712UB/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5712UB/TR belongs to Microsemi's legacy MIL-qualified Schottky diode product line, engineered specifically for RF detection, precision clamping, and low-leakage signal conditioning in environments demanding hermetic packaging and extended temperature operation.
FAQ
What is the polarity configuration of the 1N5712UB/TR?
The 1N5712UB/TR is a unidirectional Schottky diode with anode on Pad 1 (base) and cathode on Pad 2 (top electrode). The "UB" suffix denotes the ceramic surface-mount package, and absence of CA/CC/D in the part number confirms unidirectional polarity-no common-anode, common-cathode, or doubler configuration.
Is the 1N5712UB/TR RoHS compliant?
Yes, the 1N5712UB/TR is RoHS compliant by design, with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances above threshold limits. Compliance is verified per EU Directive 2011/65/EU and aligns with Microsemi's commitment to environmentally responsible manufacturing for high-reliability components.
What is the thermal resistance of the 1N5712UB/TR?
The 1N5712UB/TR has a thermal resistance of 100 °C/W from junction to solder pad (RθJSP). This value reflects heat dissipation through the ceramic package base into the PCB copper, and must be accounted for when designing thermal relief pads or estimating junction temperature under 75 mA average load at elevated ambient temperatures.
Can the 1N5712UB/TR replace the 1N5712-1 axial-leaded version?
No-the 1N5712UB/TR is not a direct replacement for the 1N5712-1 due to fundamental package and mounting differences: the former is a ceramic surface-mount (UB/DO-213AA) device, while the latter is axial-leaded (DO-35). Layout, thermal path, and mechanical retention differ significantly; redesign is required for substitution.
What does "JANTXV" qualification mean for the 1N5712UB/TR?
"JANTXV" indicates that the 1N5712UB/TR meets the highest screening level under MIL-PRF-19500/444, including extended burn-in, temperature cycling, hermeticity testing, and lot traceability. This qualification ensures suitability for critical aerospace and defense applications where failure is not an option-and distinguishes it from commercial or lower-tier JAN/JANTX variants.
1N5712UB/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 4-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
- Operating Temperature - Junction:
- -65°C ~ 150°C
1N5712UB/TR FAQ
1.How can I place an order for 1N5712UB/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5712UB/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5712UB/TR reliable?
The price and inventory of 1N5712UB/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5712UB/TR is usually 5 days.
3.What payment methods are accepted for 1N5712UB/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5712UB/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5712UB/TR?
1N5712UB/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5712UB/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5712UB/TR?
For technical support, including 1N5712UB/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5712UB/TR requirements.
6.How does Aetrix verify that 1N5712UB/TR is sourced from the original manufacturer or authorized distributors?
All 1N5712UB/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5712UB/TR meets industry standards.
7.What is the process for return or replacement of 1N5712UB/TR?
All 1N5712UB/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5712UB/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5712UB/TR part is unused and in its original packaging.
Return procedure for 1N5712UB/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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