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Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-1N1183

VS-1N1183

DIODE GEN PURP 50V 35A DO203AB

Vishay General Semiconductor - Diodes Division

96 0.00
RFQ
VS-1N1183

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 50 V 35A 1.7 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 50 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
ADS120J020H3-ASATH

ADS120J020H3-ASATH

DIODE 1200V-20A TO247-2L, AUTOMO

Luminus Devices Inc.

100 0.00
RFQ
ADS120J020H3-ASATH

Datasheet

Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 63A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1565pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2L -55°C ~ 175°C
VS-42HFR80

VS-42HFR80

DIODE GP REV 800V 40A DO203AB

Vishay General Semiconductor - Diodes Division

76 0.00
RFQ
VS-42HFR80

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-42HF80

VS-42HF80

DIODE GEN PURP 800V 40A DO203AB

Vishay General Semiconductor - Diodes Division

51 0.00
RFQ
VS-42HF80

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-95PFR120

VS-95PFR120

DIODE GP REV 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

85 0.00
RFQ
VS-95PFR120

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1200 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PF80

VS-95PF80

DIODE GEN PURP 800V 95A DO203AB

Vishay General Semiconductor - Diodes Division

93 0.00
RFQ
VS-95PF80

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 800 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
VS-95PF120

VS-95PF120

DIODE GEN PURP 1.2KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

64 0.00
RFQ
VS-95PF120

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N5194UR/TR

1N5194UR/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

85 0.00
RFQ
1N5194UR/TR

Datasheet

Sigma Bond™ DO-213AA Tape & Reel (TR) Active Standard 70 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 70 V - - - Surface Mount DO-213AA -55°C ~ 200°C
TRS10H120H,S1Q

TRS10H120H,S1Q

1200V 3RDGEN SIC-SBD 10A TO-247-

Toshiba Semiconductor and Storage

60 0.00
RFQ
TRS10H120H,S1Q

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 38A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 1200 V 1148pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
1N6641US/TR

1N6641US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

70 0.00
RFQ
1N6641US/TR

Datasheet

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
1N3595AUS/TR

1N3595AUS/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

99 0.00
RFQ

-

- DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V 8pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 175°C
1N5418USE3/TR

1N5418USE3/TR

UFR,FRR

Microchip Technology

70 0.00
RFQ
1N5418USE3/TR

Datasheet

- SQ-MELF, B Tape & Reel (TR) Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
STPSC20G12WL

STPSC20G12WL

1200 V, 20 A HIGH SURGE SILICON

STMicroelectronics

96 0.00
RFQ
STPSC20G12WL

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 1200 V 1548pF @ 0V, 1MHz - - Through Hole DO-247 LL -55°C ~ 175°C
1N3595AUR-1/TR

1N3595AUR-1/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

85 0.00
RFQ
1N3595AUR-1/TR

Datasheet

- DO-213AA Tape & Reel (TR) Active Standard 125 V 150mA 920 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 3 µs 2 nA @ 125 V - - - Surface Mount DO-213AA -65°C ~ 175°C
VS-95PF160

VS-95PF160

DIODE GEN PURP 1.6KV 95A DO203AB

Vishay General Semiconductor - Diodes Division

54 0.00
RFQ
VS-95PF160

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard 1600 V 95A 1.4 V @ 267 A Standard Recovery >500ns, > 200mA (Io) - - - - - Chassis, Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
1N5415US/TR

1N5415US/TR

UFR,FRR

Microchip Technology

97 0.00
RFQ
1N5415US/TR

Datasheet

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 50 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
TRS15H120H,S1Q

TRS15H120H,S1Q

1200V 3RDGEN SIC-SBD 15A TO-247-

Toshiba Semiconductor and Storage

60 0.00
RFQ
TRS15H120H,S1Q

Datasheet

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.45 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 1673pF @ 1V, 1MHz - - Through Hole TO-247-2L 175°C
S3D60065H2

S3D60065H2

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

100 0.00
RFQ
S3D60065H2

Datasheet

- TO-247-2 Tube Active - - - - - - - - - - Through Hole TO-247AC -
VS-40HFR160

VS-40HFR160

DIODE GEN PURP 1.6KV 40A DO203AB

Vishay General Semiconductor - Diodes Division

37 0.00
RFQ
VS-40HFR160

Datasheet

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 1600 V 40A 1.5 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 4.5 mA @ 1600 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 160°C
JANTXV1N5617

JANTXV1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

64 0.00
RFQ
JANTXV1N5617

Datasheet

- A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 175°C
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