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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology 1N6641US/TR

Name: 1N6641US/TR
Brand: Microchip Technology
SKU: 1N6641US/TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1N6641US/TR

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: 1N6641US/TR.pdf

Description:: SIGNAL OR COMPUTER DIODE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1N6641US/TR from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D glass package, rated for 75 V reverse working voltage (V_RWM), 200 mA forward current (I_F), and 5.0 ns reverse recovery time (t_rr) at I_F = 10 mA, used in high-reliability military timing and pulse shaping circuits.

For engineers reviewing the 1N6641US/TR datasheet, 1N6641US/TR pinout, 1N6641US/TR application, or 1N6641US/TR equivalent, key selection criteria include its 75 V V_RWM, 5.0 ns t_rr, 1.10 V V_F @ 200 mA, -65°C to +175°C operating temperature range, and MIL-PRF-19500/609 qualification for aerospace and defense systems.

Technical Context

This diode operates as a fast-switching unidirectional rectifier with low stored charge and controlled minority-carrier lifetime, enabling clean turn-off in pulse generation and waveform clipping. Its non-cavity glass construction and metallurgical bond ensure stable junction characteristics under thermal cycling and radiation exposure.

The device exhibits 3.0 pF capacitance at zero bias and maintains ≤100 nA reverse leakage (I_R1) at 50 V and ≤100 μA (I_R2) at 150°C, supporting stable operation in high-impedance sample-and-hold and precision trigger circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in clamping and protection stages.
t_rr	5.0 ns - Reverse recovery time at I_F = 10 mA; enables use in >100 MHz pulse shaping and high-speed sampling gates.
V_F	1.10 V @ 200 mA - Forward voltage drop; determines conduction loss and self-heating in repetitive switching applications.
C_T	3.0 pF @ V_R = 0 - Junction capacitance; critical for bandwidth control in RF detector and fast-edge conditioning circuits.
I_R1	≤100 nA @ 50 V, 25°C - Low-leakage specification; ensures minimal signal corruption in high-impedance analog front-ends.
T_J Range	-65°C to +175°C - Extended junction temperature capability; supports deployment in engine-mounted avionics and downhole instrumentation.

Pinout & Package

Package: D-5D, hermetically sealed glass case per MIL-PRF-19500/609; axial leads with cathode band marking; lead finish: tin/lead; thermal resistance R_θJC = 50°C/W max (L = 0).

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential node in series-switching configurations; must withstand 2.5 A surge (8.3 ms) during transient events.
Cathode	Forward current exit / reverse blocking terminal	Banded end; referenced to system ground or return path; sustains 75 V reverse bias without avalanche conduction.

Key Features

Feature	Design Value
MIL-PRF-19500/609 Qualified	Meets screening, testing, and traceability requirements for JAN, JANTX, JANTXV, and JANS levels-enabling use in flight-critical subsystems.
Hermetic Glass Encapsulation	Prevents moisture ingress and parameter drift over 20+ years in vacuum or high-humidity environments.
Metallurgical Bond Construction	Eliminates wire bonds and interfacial delamination risks-ensuring reliability under mechanical shock (>100 g) and thermal shock (−65°C ↔ +175°C).
Controlled t_rr & C_T	5.0 ns t_rr and 3.0 pF C_T enable predictable edge fidelity in <10 ns rise-time digital timing chains.

Applications

Precision Pulse Generators	Aerospace Timing Circuits
Use Scenario: Generating sub-10 ns rise-time trigger pulses for radar modulators and laser drivers. IC Role / Device Role / Timing Role: Fast-switching diode in Schottky-clamped or Baker-clamp configurations to suppress minority-carrier tail and sharpen edges. Use Value: 5.0 ns t_rr and 1.10 V V_F minimize pulse distortion and power loss at 200 mA peak current.	Use Scenario: Signal routing and level translation in MIL-STD-1553 bus interface timing modules. IC Role / Device Role / Timing Role: High-reliability clamp diode protecting bus transceivers from ESD and inductive kickback. Use Value: Hermetic D-5D package and −65°C to +175°C rating ensure uninterrupted operation across aircraft altitude and temperature profiles.
Downhole Instrumentation	Radiation-Hardened Sampling Gates
Use Scenario: Voltage clamping and signal conditioning in oil/gas well logging tools exposed to >150°C ambient and gamma radiation. IC Role / Device Role / Timing Role: Reverse-biased protection element in analog front-end multiplexers and ADC input stages. Use Value: ≤100 nA I_R1 at 50 V and metallurgical bond integrity maintain measurement accuracy after 10 krad(Si) total ionizing dose.	Use Scenario: Gating high-speed analog signals in nuclear physics data acquisition systems. IC Role / Device Role / Timing Role: Fast turn-off switch in sample-hold and strobe circuits requiring precise aperture timing. Use Value: 3.0 pF C_T and 5.0 ns t_rr limit aperture jitter to <1 ps RMS in 100 MS/s sampling paths.

Precision Pulse Generators

Aerospace Timing Circuits

Use Scenario: Generating sub-10 ns rise-time trigger pulses for radar modulators and laser drivers.

IC Role / Device Role / Timing Role: Fast-switching diode in Schottky-clamped or Baker-clamp configurations to suppress minority-carrier tail and sharpen edges.

Use Value: 5.0 ns t_rr and 1.10 V V_F minimize pulse distortion and power loss at 200 mA peak current.

Use Scenario: Signal routing and level translation in MIL-STD-1553 bus interface timing modules.

IC Role / Device Role / Timing Role: High-reliability clamp diode protecting bus transceivers from ESD and inductive kickback.

Use Value: Hermetic D-5D package and −65°C to +175°C rating ensure uninterrupted operation across aircraft altitude and temperature profiles.

Downhole Instrumentation

Radiation-Hardened Sampling Gates

Use Scenario: Voltage clamping and signal conditioning in oil/gas well logging tools exposed to >150°C ambient and gamma radiation.

IC Role / Device Role / Timing Role: Reverse-biased protection element in analog front-end multiplexers and ADC input stages.

Use Value: ≤100 nA I_R1 at 50 V and metallurgical bond integrity maintain measurement accuracy after 10 krad(Si) total ionizing dose.

Use Scenario: Gating high-speed analog signals in nuclear physics data acquisition systems.

IC Role / Device Role / Timing Role: Fast turn-off switch in sample-hold and strobe circuits requiring precise aperture timing.

Use Value: 3.0 pF C_T and 5.0 ns t_rr limit aperture jitter to <1 ps RMS in 100 MS/s sampling paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1N6640US/TR	V_RWM = 50 V, t_rr = 4.0 ns, V_F = 0.87 V @ 200 mA	Lower voltage rating limits use in 75 V rail clamping; faster t_rr benefits ultra-high-speed gating.	Select when circuit V_R < 50 V and sub-4 ns recovery is required; not suitable for 75 V designs.
1N6639US/TR	V_RWM = 100 V, t_rr = 4.0 ns, V_F = 0.62 V @ 500 mA	Higher V_RWM and current rating increase margin in surge-prone power rails but add 0.1 V V_F overhead at 200 mA.	Choose for 100 V systems or where 500 mA surge handling is needed; larger V_F increases conduction loss at 200 mA.

Compared with 1N6640US/TR and 1N6639US/TR, the 1N6641US/TR uniquely balances 75 V V_RWM, 5.0 ns t_rr, and 1.10 V V_F for mid-voltage, high-fidelity pulse applications-making it optimal where 50 V is insufficient and 100 V overdesign introduces unnecessary loss.

Availability

1N6641US/TR is available at Aetrix Electronics and suitable for precision pulse generators, aerospace timing circuits, and downhole instrumentation requiring stable component supply, full MIL-PRF-19500/609 traceability, and extended temperature performance.

Supply support for 1N6641US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-tolerant, and military-grade discrete and analog components.

The 1N6641US/TR belongs to Microsemi's legacy MIL-PRF-19500/609 qualified switching diode family, designed specifically for mission-critical timing, pulse conditioning, and protection in aerospace, defense, and energy exploration systems.

FAQ

What is the maximum reverse working voltage (V_RWM) for the 1N6641US/TR?

The 1N6641US/TR has a maximum reverse working voltage (V_RWM) of 75 V, verified per MIL-PRF-19500/609 test conditions. This rating defines the highest continuous DC or peak AC reverse voltage the 1N6641US/TR can block without entering breakdown, and is validated at T_J = +25°C with specified leakage limits. Exceeding 75 V may cause irreversible avalanche conduction.

What is the reverse recovery time (t_rr) of the 1N6641US/TR and under what conditions is it measured?

The 1N6641US/TR has a reverse recovery time (t_rr) of 5.0 ns, measured at I_F = 10 mA, I_R = 10 mA, and di/dt = 100 A/μs per MIL-PRF-19500/609. This value reflects the time required for the 1N6641US/TR to transition from forward conduction to reverse blocking state, directly impacting edge sharpness in high-frequency pulse applications.

Is the 1N6641US/TR suitable for operation at elevated temperatures such as +150°C?

Yes, the 1N6641US/TR is rated for continuous operation from −65°C to +175°C, with reverse leakage (I_R2) specified at ≤100 μA at +150°C. Its hermetic D-5D package and metallurgical bond construction ensure parametric stability and mechanical integrity at +150°C, making the 1N6641US/TR appropriate for downhole and engine bay deployments.

Does the 1N6641US/TR have a defined junction capacitance (C_T) and how is it measured?

Yes, the 1N6641US/TR has a junction capacitance (C_T) of 3.0 pF, measured at V_R = 0 V and f = 1 MHz per MIL-PRF-19500/609. This low capacitance minimizes loading effects in high-impedance timing nodes and enables predictable frequency response in RF detector and fast-edge conditioning circuits using the 1N6641US/TR.

What packaging standard and physical form does the 1N6641US/TR follow?

The 1N6641US/TR uses the D-5D hermetically sealed glass package per MIL-PRF-19500/609, with axial leads, cathode band marking, and tin/lead lead finish. Dimensions are D = 1.78–2.16 mm, G = 4.19–4.95 mm, and F = 0.48–0.71 mm-ensuring compatibility with legacy military board layouts and automated handling equipment designed for this 1N6641US/TR form factor.

1N6641US/TR Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 50 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 50 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

1N6641US/TR FAQ

1.How can I place an order for 1N6641US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6641US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6641US/TR reliable?

The price and inventory of 1N6641US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6641US/TR is usually 5 days.

3.What payment methods are accepted for 1N6641US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6641US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6641US/TR?

1N6641US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6641US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6641US/TR?

For technical support, including 1N6641US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6641US/TR requirements.

6.How does Aetrix verify that 1N6641US/TR is sourced from the original manufacturer or authorized distributors?

All 1N6641US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6641US/TR meets industry standards.

7.What is the process for return or replacement of 1N6641US/TR?

All 1N6641US/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N6641US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6641US/TR part is unused and in its original packaging.

Return procedure for 1N6641US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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