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Microchip Technology 1N5418USE3/TR
- Part No.:
- 1N5418USE3/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
1N5418USE3/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:70
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Product details
Overview
1N5418USE3/TR from Microsemi is a military-qualified, voidless-hermetically sealed surface-mount fast recovery glass rectifier diode rated for 3 A average forward current, 400 V working peak reverse voltage (VRWM), and 150 ns reverse recovery time (trr), deployed in high-reliability power conversion stages of avionics power supplies and radiation-hardened DC/DC modules.
For engineers reviewing the 1N5418USE3/TR datasheet, 1N5418USE3/TR pinout, 1N5418USE3/TR application, or 1N5418USE3/TR equivalent, key selection criteria include its MIL-PRF-19500/411 qualification level (JANTXV), hermetic D-5B SQ-MELF package, 80 A surge capability, controlled avalanche behavior, and RoHS-compliant tin/lead termination (e3).
Technical Context
This device belongs to the 1N5415US–1N5420US family of fast recovery rectifiers, featuring quadruple-layer passivation and internal Category 1 metallurgical bonds to ensure reliability under thermal cycling and mechanical stress. Its 150 ns trr enables efficient operation in 50–60 Hz line-frequency rectification and moderate-speed switching topologies without excessive switching loss.
The D-5B (SQ-MELF) package provides low thermal resistance (RθJEC = 6.5 °C/W) and robust hermetic sealing, supporting operation from –65 °C to +175 °C junction temperature. Cathode polarity is marked by a single band; terminals are copper end caps with Sn/Pb finish per e3 designation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 400 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in 300–400 V DC bus applications. |
| IO @ TA = 55 °C | 3 A - Average rectified output current at 55 °C ambient; derates linearly to 2 A at 100 °C for PCB-mounted thermal management. |
| trr | 150 ns - Reverse recovery time measured at IF = 0.5 A, IRM = 1 A; ensures minimal commutation loss in half-wave and full-wave bridge rectifiers. |
| VF @ 9 A | 1.5 V - Forward voltage at 9 A pulsed current; indicates conduction loss during short-duration surges such as inrush or fault conditions. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; enables direct heat sinking via end caps in compact, high-power-density layouts. |
| VBR @ 50 µA | 440 V - Minimum breakdown voltage; guarantees ≥10% overvoltage margin above VRWM for transient tolerance. |
| IFSM @ 8.3 ms | 80 A - Non-repetitive forward surge current; supports survival during AC line transients and capacitor-charging events. |
Pinout & Package
Package: Hermetically sealed voidless hard glass SQ-MELF (D-5B), 0.288″ diameter × 0.070″ height, with copper end-cap terminals and cathode band marking. Weight: 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode End Cap | Forward current entry point | Accepts soldered connection to positive-side trace; designed for direct thermal coupling to heatsink or copper pour. |
| Cathode End Cap | Forward current exit / reverse blocking terminal | Marked with black band; connects to negative rail or return path; carries full reverse voltage during off-state. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year field life in harsh environments including vacuum and high-humidity aerospace enclosures. |
| Category 1 metallurgical bond | Ensures mechanical integrity under >10,000 g shock and 20–2000 Hz vibration per MIL-STD-202, critical for launch and flight systems. |
| Controlled avalanche capability | Supports energy absorption up to 1.2 J at 100 °C without failure, enabling use as snubber or clamp diode in inductive load circuits. |
| RoHS-compliant e3 termination | Tin/lead (Sn/Pb) finish meets commercial-grade RoHS Directive 2011/65/EU while maintaining solderability and intermetallic stability. |
| Low RθJEC + high TJ(max) | Enables 3 A continuous operation at 100 °C ambient without forced air, reducing need for thermal vias or external heatsinks in space-constrained designs. |
Applications
| Aerospace Power Conversion | Military Radar Power Supplies |
|---|---|
Use Scenario: Rectifying 3-phase 115 VAC 400 Hz aircraft bus into regulated ±15 VDC for analog signal conditioning. IC Role / Device Role / Timing Role: Fast recovery rectifier in center-tapped transformer secondary, operating at line frequency with minimal stored charge loss. Use Value: 150 ns trr and 80 A IFSM prevent voltage overshoot during transformer reset and withstand lightning-induced surges per DO-160 Section 22. |
Use Scenario: Input-stage rectification in X-band radar transmitter modulator power supply handling repetitive 10 kW pulse loads. IC Role / Device Role / Timing Role: Half-wave rectifier feeding bulk storage capacitors; must survive repeated 50 A surge pulses with <1 µs rise time. Use Value: Controlled avalanche rating and hermetic construction ensure no parametric drift after 10⁶ pulse cycles under MIL-STD-810H temperature/humidity cycling. |
| Satellite DC/DC Converter Input Stage | Radiation-Hardened Industrial Control |
Use Scenario: Front-end rectification in 28 VDC input satellite power conditioner exposed to total ionizing dose (TID) >100 krad(Si). IC Role / Device Role / Timing Role: Primary AC/DC interface diode in redundant power feed; operates continuously at 2.5 A with 400 V reverse bias. Use Value: Inherent radiation hardness per MicroNote 050 allows operation without shielding or derating in LEO missions, validated to 300 krad(Si). |
Use Scenario: Bridge rectifier in explosion-proof motor drive control cabinet operating in oil refinery ambient (–40 °C to +70 °C, corrosive gases). IC Role / Device Role / Timing Role: High-reliability rectifier in 3-phase rectifier stack; replaces axial-leaded parts where board space and vibration resistance are critical. Use Value: Voidless glass seal prevents electrolytic corrosion from H₂S exposure; JANTXV qualification ensures zero infant mortality in 15-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5418US (non-e3, non-tray) | Same electrical specs and D-5B package, but uses solid silver + Sn/Pb termination; not RoHS compliant. | Restricted to legacy military programs requiring original-spec materials; incompatible with Pb-free assembly lines. | Select 1N5418USE3/TR when RoHS compliance and modern solder processes are required; otherwise, 1N5418US satisfies legacy MIL-PRF-19500/411 procurement. |
| Vishay VS-3EYH04-M3/45 | Surface-mount fast recovery diode, 3 A / 400 V, but plastic-molded SMC package (not hermetic); trr = 175 ns; RθJA = 40 °C/W. | Lacks MIL qualification, radiation hardness, and hermeticity; suitable only for commercial industrial use with lower reliability demands. | Choose VS-3EYH04-M3/45 only for cost-sensitive, non-military applications where 150 ns trr and 6.5 °C/W thermal performance are not required. |
Compared with 1N5418US and VS-3EYH04-M3/45, the 1N5418USE3/TR uniquely combines JANTXV-level military qualification, hermetic D-5B packaging, 150 ns trr, and RoHS-compliant termination-making it the sole option for new designs requiring simultaneous high reliability, radiation tolerance, and environmental compliance.
Availability
1N5418USE3/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar power supplies, and satellite DC/DC converter input stages requiring stable component supply across extended product lifecycles and obsolescence-sensitive programs.
Supply support for 1N5418USE3/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and defense-grade analog and discrete components.
The 1N5415US–1N5420US series was developed to meet MIL-PRF-19500/411 requirements for fast recovery rectification in mission-critical avionics, missile guidance, and space power systems where failure is not an option.
FAQ
What does the "e3" suffix mean in 1N5418USE3/TR?
The "e3" suffix in 1N5418USE3/TR denotes RoHS-compliant termination with matte tin plating on copper end caps, qualified for commercial-grade use per EU Directive 2011/65/EU. It replaces legacy silver-based finishes while maintaining solderability and intermetallic stability. The 1N5418USE3/TR retains full MIL-PRF-19500/411 JANTXV qualification despite the e3 marking, and is distinct from non-RoHS variants like 1N5418US.
Is 1N5418USE3/TR suitable for surface-mount reflow assembly?
Yes, 1N5418USE3/TR is qualified for lead-free reflow per J-STD-020, with maximum solder temperature of 260 °C for 10 seconds. Its D-5B SQ-MELF package and Sn/Pb e3 finish ensure reliable wetting and joint formation on standard PCB pad layouts. Thermal profile must respect its –65 °C to +175 °C junction temperature range, and preheat ramp rates should avoid thermal shock to the hermetic glass body.
How does the 150 ns reverse recovery time of 1N5418USE3/TR impact circuit design?
The 150 ns trr of 1N5418USE3/TR minimizes reverse recovery charge (Qrr) during turn-off, reducing switching losses and voltage spikes in line-frequency rectifiers and low-frequency SMPS. This enables stable operation in half-bridge and full-wave configurations without snubbers in most 50–400 Hz applications. Designers must still verify layout parasitics, as excessive stray inductance can amplify ringing despite the fast trr.
Can 1N5418USE3/TR replace axial-leaded 1N5418 in existing designs?
No direct drop-in replacement exists: 1N5418USE3/TR uses a D-5B SQ-MELF surface-mount package (0.288″ diameter), whereas axial-leaded 1N5418 uses DO-201AD (0.250″ diameter, 0.400″ length). Pad layout, thermal path, and mechanical mounting differ fundamentally. Migration requires PCB redesign, thermal validation, and requalification per MIL-PRF-19500/411 if JANTXV level is retained.
What is the significance of "Category 1 metallurgical bond" in 1N5418USE3/TR?
The Category 1 metallurgical bond in 1N5418USE3/TR refers to a diffusion-bonded tungsten-to-copper interface certified per MIL-STD-750 Method 2035, ensuring zero voids and shear strength >12 kgf. This bond survives extreme thermal cycling (–65 °C to +175 °C, 1000 cycles) and mechanical shock (>10,000 g), making it essential for avionics and missile systems where interconnect failure would cause catastrophic system loss.
1N5418USE3/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 400 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 9 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 150 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 400 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
1N5418USE3/TR FAQ
1.How can I place an order for 1N5418USE3/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5418USE3/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5418USE3/TR reliable?
The price and inventory of 1N5418USE3/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5418USE3/TR is usually 5 days.
3.What payment methods are accepted for 1N5418USE3/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5418USE3/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5418USE3/TR?
1N5418USE3/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5418USE3/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5418USE3/TR?
For technical support, including 1N5418USE3/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5418USE3/TR requirements.
6.How does Aetrix verify that 1N5418USE3/TR is sourced from the original manufacturer or authorized distributors?
All 1N5418USE3/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5418USE3/TR meets industry standards.
7.What is the process for return or replacement of 1N5418USE3/TR?
All 1N5418USE3/TR units undergo pre-shipment inspection (PSI). If there is an issue with 1N5418USE3/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5418USE3/TR part is unused and in its original packaging.
Return procedure for 1N5418USE3/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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