STMicroelectronics 1N5819UB1
- Part No.:
- 1N5819UB1
- Manufacturer:
- STMicroelectronics
- Category:
- Single Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
1N5819UB1.pdf
- Description:
- AEROSPACE 45 V POWER SCHOTTKY RE
- Quantity:
- Payment:

- Shipping:

Inventory:17
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1N5819UB1 from STMicroelectronics is an ESCC-qualified aerospace-grade Schottky diode in a hermetic LCC-2B ceramic surface-mount package, rated for 45 V repetitive peak reverse voltage, 1 A average forward current, and 150 °C maximum junction temperature. It delivers low forward voltage drop (0.49 V at 1 A, +25 °C), ultrafast switching, and radiation hardness up to 3 Mrad(Si) high dose rate - deployed in satellite power systems for secondary rectification and OR-ing.
For engineers reviewing the 1N5819UB1 datasheet, 1N5819UB1 pinout, 1N5819UB1 application, or 1N5819UB1 equivalent, key selection criteria include radiation tolerance (150 krad/Si LDR, 3 Mrad/Si HDR), hermetic LCC-2B packaging compatibility with D5B footprints, conduction loss modeling (P = 0.285×IF(AV) + 0.165×IF²(RMS)), and ESCC 5106/021 qualification status.
Technical Context
This diode uses full planar Schottky technology enabling stable operation up to 150 °C junction temperature and negligible reverse recovery charge. Its LCC-2B package features gold-plated terminations, electrically floating metallic lid, and thermal resistance Rth(j-c) = 16 °C/W - optimized for conduction-limited aerospace power stages.
It exhibits low leakage (≤20 µA at −55 °C, VR = 45 V; ≤3.5 mA at 100 °C, VR = 45 V) and low capacitance (70 pF at VR = 5 V, 1 MHz), supporting high-frequency flyback and forward converter output rectification without snubber dependency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 45 V - defines maximum repetitive reverse blocking capability in DC motor freewheeling or polarity protection circuits |
| IF(AV) | 1 A at TC ≥ 142 °C, δ = 0.5 - specifies continuous DC current handling under thermally constrained PCB mounting |
| VF(max) | 0.49 V at IF = 1 A, Tj = 25 °C - enables <0.5 V conduction loss in 5 V output rectifiers, reducing thermal load |
| Tj(max) | 150 °C - supports operation in uncooled spacecraft enclosures with ambient up to 125 °C and power derating per Figure 3 |
| Rth(j-c) | 16 °C/W - allows direct thermal coupling to metal-core PCBs or chassis for passive dissipation without heatsinks |
| Cj | 70 pF at VR = 5 V, 1 MHz - minimizes switching node ringing in >100 kHz SMPS designs |
| Radiation TID | 3 Mrad(Si) HDR / 150 krad(Si) LDR - qualifies for long-duration Earth-orbit missions without parametric degradation |
Pinout & Package
The 1N5819UB1 is housed in a surface-mount hermetic LCC-2B ceramic package (footprint compatible with industry-standard D5B). Dimensions: 2.23 mm × 5.40 mm × 1.82 mm (L×W×H); mass: 180 mg; gold-plated terminations; electrically floating metallic lid.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Connected to input/source side in rectifier or freewheeling path; identified by internal metalization at two top corners and index mark |
| Pin 2 | Cathode | Connected to output/load side; polarity critical for reverse polarity protection and OR-ing functionality |
Key Features
| Feature | Design Value |
|---|---|
| ESCC qualification | Complies with detail specification 5106/021 - mandatory for European Space Agency flight hardware procurement |
| Hermetic LCC-2B sealing | Prevents moisture ingress and outgassing in vacuum environments; eliminates conformal coating requirements |
| Low conduction loss | 0.49 V forward drop at 1 A enables >92% efficiency in 5 V flyback secondaries at full load |
| Radiation hardness | Validated to 3 Mrad(Si) HDR ensures no parameter shift after 10+ years in geostationary orbit |
| Thermal conductivity | 16 °C/W junction-to-case resistance supports >1 W dissipation on 25 mm² copper pad without forced cooling |
Applications
| Satellite Power Rectification | Redundancy OR-ing |
|---|---|
|
Use Scenario: Secondary-side rectification in 5 V isolated flyback converters powering onboard telemetry processors. IC Role / Device Role / Timing Role: Schottky rectifier replacing silicon diodes to minimize conduction loss and thermal stress in sealed avionics modules. Use Value: 0.49 V forward drop reduces power loss by 45% vs. standard 1N5819, extending thermal margin in zero-convection space environment. |
Use Scenario: Diode-OR configuration combining two independent 28 V bus supplies feeding critical payload subsystems. IC Role / Device Role / Timing Role: Redundancy diode ensuring uninterrupted power during single-bus failure; leverages low VF to minimize voltage drop across OR path. Use Value: Sub-500 mV forward drop maintains >27.5 V at load under 1 A, preserving regulation margin for downstream DC-DC converters. |
| DC Motor Freewheeling | Reverse Polarity Protection |
|
Use Scenario: Freewheeling path for brushed DC motors driving solar array actuators in low-earth orbit satellites. IC Role / Device Role / Timing Role: Fast-recovery Schottky clamp absorbing inductive kickback during PWM turn-off; operates at >20 kHz switching frequency. Use Value: Negligible reverse recovery time prevents voltage overshoot spikes that could damage motor drivers or induce EMI in sensitive RF payloads. |
Use Scenario: Input protection for 5 V power management ICs in CubeSat command & data handling units. IC Role / Device Role / Timing Role: Series-connected cathode-to-input diode blocking reverse connection of external battery or ground-referenced test equipment. Use Value: 45 V VRRM withstands transient surges during launch vibration; hermetic seal prevents corrosion-induced leakage in humid integration labs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5819U01B | Same die, ESCC 5106/021/02 flight model with serialized traceability and full ESCC qualification documentation | Required for flight hardware; includes serial numbers, diffusion lot traceability, and ESCC maintenance lot reference | Select for mission-critical subsystems where full ESCC audit trail and lot-level radiation test reports are mandated |
| 1N5819U02B | Same die, ESCC 5106/021/03 flight model with SnPb 63/37 solder dip leads instead of gold plating | Compatible with legacy Pb-based reflow processes; slightly higher contact resistance than gold | Select when integrating into existing Pb-based assembly lines or when cost-sensitive non-mission-critical subsystems allow SnPb finish |
Compared with 1N5819UB1 (engineering model), 1N5819U01B adds full ESCC flight certification traceability for orbital deployment, while 1N5819U02B trades gold plating for SnPb finish to support Pb-based reflow - both retain identical electrical and radiation performance.
Availability
1N5819UB1 is available at Aetrix Electronics and suitable for satellite power rectification, redundancy OR-ing, and DC motor freewheeling requiring stable component supply across extended development cycles and low-volume production runs.
Supply support for 1N5819UB1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and aerospace-grade components for industrial, automotive, and space applications.
The 1N5819U series belongs to ST's ESCC-qualified radiation-hardened discrete portfolio, engineered specifically for high-reliability power conversion in low-Earth and geostationary orbit missions.
FAQ
Is the 1N5819UB1 suitable for use in flight hardware?
No - the 1N5819UB1 is an engineering model qualified to ESCC 5106/021 but lacking full flight certification documentation. For flight hardware, ST specifies 1N5819U01B (gold-plated, ESCC 5106/021/02) or 1N5819U02B (SnPb-plated, ESCC 5106/021/03), which include serialized traceability, diffusion lot records, and ESCC maintenance lot validation.
What is the thermal resistance from junction to case (Rth(j-c)) for the LCC-2B package?
The junction-to-case thermal resistance is 16 °C/W, measured under standard test conditions per DS6395 Rev 7. This value assumes direct thermal contact between the package base and a copper plane; actual system-level Rth(j-a) depends on PCB copper area, layer count, and airflow - Figure 3 provides derating curves for ambient temperature.
How does the radiation hardness of 1N5819UB1 compare to commercial Schottky diodes?
1N5819UB1 is characterized to 3 Mrad(Si) high dose rate and 150 krad(Si) low dose rate - exceeding ECSS-Q-ST-60-15C1 requirements by 10×. Commercial Schottky diodes typically fail above 10–50 krad(Si) due to interface trap buildup; this device maintains VF and IR stability post-irradiation per ESCC 22900 testing protocol.
Can the metallic lid of the LCC-2B package be grounded?
Yes - the metallic lid is electrically floating and not internally connected to any pin. Grounding it has no effect on electrical characteristics, but doing so may improve EMI shielding in high-frequency power stages. ST confirms no performance impact whether grounded or left floating, as verified in radiation and thermal characterization tests.
1N5819UB1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 2-SMD, No Lead
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 45 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 450 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 20 µA @ 45 V
- Capacitance @ Vr, F:
- 70pF @ 5V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 2-LCCB
- Operating Temperature - Junction:
- 150°C
1N5819UB1 FAQ
1.How can I place an order for 1N5819UB1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1N5819UB1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1N5819UB1 reliable?
The price and inventory of 1N5819UB1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N5819UB1 is usually 5 days.
3.What payment methods are accepted for 1N5819UB1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N5819UB1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1N5819UB1?
1N5819UB1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1N5819UB1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1N5819UB1?
For technical support, including 1N5819UB1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N5819UB1 requirements.
6.How does Aetrix verify that 1N5819UB1 is sourced from the original manufacturer or authorized distributors?
All 1N5819UB1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N5819UB1 meets industry standards.
7.What is the process for return or replacement of 1N5819UB1?
All 1N5819UB1 units undergo pre-shipment inspection (PSI). If there is an issue with 1N5819UB1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1N5819UB1 part is unused and in its original packaging.
Return procedure for 1N5819UB1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1N5819UB1 Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
