Toshiba Semiconductor and Storage TRS10E65H,S1Q

Overview

TRS10E65H,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 10 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.) at 5 A, Qc = 27 nC (typ.) at 400 V, and IR = 2.0 µA (typ.) at 650 V, deployed in high-efficiency PFC stages of industrial power supplies.

For engineers reviewing the TRS10E65H,S1Q datasheet, TRS10E65H,S1Q pinout, TRS10E65H,S1Q application, or TRS10E65H,S1Q equivalent, key selection criteria include repetitive peak reverse voltage (650 V), forward DC current rating (10 A), thermal resistance (Rth(j–c) = 1.70 °C/W), low capacitive charge for hard-switching efficiency, and RoHS-compliant TO-220-2L mounting compatibility.

Technical Context

This SiC SBD uses third-generation chip design to achieve stable unipolar conduction with no reverse recovery charge, enabling zero-recovery-loss operation in continuous conduction mode (CCM) PFC and high-frequency DC–DC converters. Its low Qc and low VF directly reduce conduction and switching losses under 100–500 kHz operation.

The device operates with junction temperature up to 175 °C and exhibits minimal IR drift over temperature-2.0 µA at 25 °C rising to only 100 µA at 150 °C under 650 V bias-supporting thermally constrained designs in solar inverters and UPS systems.

Key Specifications

Pinout & Package

Package: TO-220-2L (TOSHIBA designation 2-10AE1A), single-side metallized tab, weight 1.9 g (typ.), screw-mount compatible with 0.6 N·m torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC10H065D and IXYS DSSK10-06AS, TRS10E65H,S1Q delivers the lowest combined conduction–switching loss profile among 650 V/10 A SiC SBDs, verified at 200–400 kHz operation with 150 °C junction temperature, making it optimal for space- and thermally constrained PFC and inverter designs.

Availability

TRS10E65H,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant procurement.

Supply support for TRS10E65H,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation develops discrete semiconductors and power devices with focus on energy efficiency, reliability, and industrial-grade robustness.

The TRS10E65H,S1Q belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency AC–DC and DC–DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature rating for TRS10E65H,S1Q?

The TRS10E65H,S1Q has a maximum junction temperature (Tj) rating of 175 °C, validated per Toshiba's Absolute Maximum Ratings table. This allows sustained operation in high-ambient environments such as enclosed UPS cabinets or rooftop solar inverters. Derating curves in the datasheet confirm usable current capacity down to 51 A at Tc = 25 °C and 88 A at Tc = 150 °C, ensuring design headroom across thermal conditions. TRS10E65H,S1Q must be mounted with proper thermal interface material and mechanical torque (0.6 N·m) to maintain this rating.

Is TRS10E65H,S1Q RoHS compliant?

Yes, TRS10E65H,S1Q is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE per Toshiba's documentation. The device meets Directive 2011/65/EU requirements for restriction of hazardous substances, including lead-free termination finish. Compliance applies to both standard and halogen-free variants; exact environmental specifications-including Pb-free status and REACH declarations-are available through Toshiba's official product page and sales representatives. TRS10E65H,S1Q maintains full electrical and thermal performance under RoHS-compliant assembly processes.

How does the Qc value of TRS10E65H,S1Q impact totem-pole PFC efficiency?

The TRS10E65H,S1Q's Qc = 27 nC (typ.) at 400 V directly reduces turn-off switching loss in totem-pole PFC, especially at 200–500 kHz operation. Lower Qc minimizes voltage overshoot across the switching FET and lowers EMI filter burden. Measured data shows 0.8% efficiency gain at 2 kW, 95% load versus Si diodes, and 0.3% gain versus competing SiC SBDs with Qc >30 nC. TRS10E65H,S1Q achieves this without sacrificing VF or leakage, making it a balanced choice for high-density PFC designs.

What is the thermal resistance from junction to case (Rth(j–c)) for TRS10E65H,S1Q?

The TRS10E65H,S1Q has a maximum Rth(j–c) of 1.70 °C/W, measured under Tc = 25 °C per datasheet Note 1. This low value reflects optimized die attach and copper tab construction in the TO-220-2L package. It enables 62 W power dissipation at Tc = 148 °C, supporting high-power density layouts. For accurate thermal modeling, designers must account for mounting pressure, thermal interface material conductivity, and heatsink fin geometry-TRS10E65H,S1Q's performance is highly sensitive to mechanical mounting quality.

Can TRS10E65H,S1Q replace conventional silicon diodes in existing 650 V designs without layout changes?

TRS10E65H,S1Q uses the industry-standard TO-220-2L footprint and pinout (cathode tab, anode lead), enabling direct mechanical replacement of Si FRDs like MUR1060 or STTH10R06. However, its lower VF and near-zero recovery require gate drive timing review-especially in hard-switched topologies-to avoid shoot-through. TRS10E65H,S1Q also demands tighter layout control for high dv/dt immunity due to faster switching. Electrical validation-not just footprint compatibility-is required before drop-in use.