FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7422D2TRPBFMOSFET P-CH 20V 4.3A 8SO Infineon Technologies |
9,495 | 0.00 |
|
Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 610 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IPD079N06L3GBTMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
5,561 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 7.9mOhm @ 50A, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | ±20V | 4900 pF @ 30 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRFH5206TRPBFMOSFET N-CH 60V 16A/89A 8PQFN Infineon Technologies |
9,001 | 0.00 |
|
Datasheet |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Ta), 89A (Tc) | 10V | 6.7mOhm @ 50A, 10V | 4V @ 100µA | 60 nC @ 10 V | ±20V | 2490 pF @ 25 V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRF6645MOSFET N-CH 100V 5.7A DIRECTFET Infineon Technologies |
9,901 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric SJ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20 nC @ 10 V | ±20V | 890 pF @ 25 V | - | 3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SJ |
|
IRF9520NSTRRMOSFET P-CH 100V 6.8A D2PAK Infineon Technologies |
9,861 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IQE036N08NM6CGATMA1TRENCH 40<-<100V Infineon Technologies |
6,571 | 0.00 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IQE036N08NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
4,100 | 0.00 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPB075N04LGATMA1MOSFET N-CH 40V 50A D2PAK Infineon Technologies |
3,855 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2V @ 20µA | 36 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRFHM9331TR2PBFMOSFET P-CH 30V 11A 3X3 PQFN Infineon Technologies |
6,344 | 0.00 |
|
Datasheet |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 24A (Tc) | - | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48 nC @ 10 V | - | 1543 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
|
IRFH7914TRPBFMOSFET N-CH 30V 15A/35A 8PQFN Infineon Technologies |
2,153 | 0.00 |
|
Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1160 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
