Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFHM9331TR2PBF

Part No.:
IRFHM9331TR2PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixIRFHM9331TR2PBF.pdf
Description:
MOSFET P-CH 30V 11A 3X3 PQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,344

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFHM9331TR2PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in a 3 mm × 3 mm PQFN package, rated for -30 V VDS, 14.6 mΩ RDS(on) at VGS = -10 V, and -11 A continuous drain current at TA = 25°C. It serves as a high-efficiency load or system switch in low-voltage DC-DC power distribution circuits.

For engineers reviewing the IRFHM9331TR2PBF datasheet, IRFHM9331TR2PBF pinout, IRFHM9331TR2PBF application, or IRFHM9331TR2PBF equivalent, key selection criteria include its low thermal resistance to PCB (<6.0°C/W), MSL1 consumer qualification, RoHS-compliant halogen-free construction, and verified avalanche energy rating of 300 mJ at IAS = -9 A.

Technical Context

This device operates as a single N-type channel depletion-mode–inverted P-channel power switch with gate-controlled conduction. Its static characteristics are defined by a gate threshold voltage range of -1.3 V to -2.4 V, a typical forward transconductance of 16 S, and a total gate charge of 32 nC at VDS = -15 V and ID = -9.0 A.

Dynamic behavior includes turn-on delay of 11 ns, rise time of 27 ns, turn-off delay of 72 ns, and fall time of 60 ns under standard test conditions (RG = 6.8 Ω, VDD = -15 V). Input capacitance (Ciss) is 1543 pF, output capacitance (Coss) is 310 pF, and reverse transfer capacitance (Crss) is 208 pF at VDS = -24 V.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-30 V - Maximum blocking voltage before avalanche breakdown
RDS(on) max14.6 mΩ @ VGS = -10 V - On-resistance directly impacts conduction loss in load-switching applications
ID continuous-11 A @ TA = 25°C - Continuous current capability under natural convection on standard PCB
Qg typical32 nC - Total gate charge determines driver strength requirement and switching loss
RθJA76 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board
EAS300 mJ - Single-pulse avalanche energy rating at IAS = -9 A, enabling robust unclamped inductive switching
VSD-1.2 V - Body diode forward voltage at IF = -2.8 A, critical for synchronous rectification or reverse-current protection

Pinout & Package

IRFHM9331TR2PBF uses a thermally enhanced 8-pin PQFN (Power Quad Flat No-lead) package measuring 3 mm × 3 mm with exposed drain pad for optimal heat transfer to PCB. Pin 1 is marked by a dot or notch on the top surface.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)Drain (D)All eight pins connect internally to the drain terminal and exposed metal pad - primary current path and thermal interface
Pin 1 (marked)Source (S)Leftmost pin in top-left corner - source connection for gate control reference and return path
Pin 2Source (S)Adjacent to Pin 1 - redundant source bond for lower loop inductance
Pin 3Gate (G)Isolated gate input - requires controlled drive to avoid oscillation and ensure clean turn-on/turn-off
Pin 4Source (S)Third source connection - reduces source inductance in high-di/dt switching

Key Features

FeatureDesign Value
Low RθJC6.0°C/W - Enables direct thermal coupling to PCB copper, reducing junction temperature rise under load
MSL1 qualificationMoisture Sensitivity Level 1 - Allows unlimited floor life and reflow without baking, simplifying SMT assembly
RoHS & halogen-freeNo lead, bromide, or halogen - Complies with environmental directives and supports green manufacturing
Body diode performancetrr = 64–96 ns, Qrr = 25–38 nC - Supports fast recovery in bidirectional current paths without external diode

Applications

Battery Protection CircuitUSB Type-C Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in lithium-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main power path between battery and system rail.

Use Value: Low RDS(on) minimizes voltage drop during discharge; avalanche rating withstands inductive kickback from protection FET drivers.

Use Scenario: VBUS enable/disable in USB-C port controllers supporting 20 V/5 A PD profiles.

IC Role / Device Role / Timing Role: System-level power switch isolating downstream devices from upstream VBUS during fault or disconnect events.

Use Value: MSL1 and PQFN footprint support compact layout; low gate charge enables fast response to PD controller GPIO signals.

Industrial PLC I/O ModuleAutomotive Body Control Module (BCM)

Use Scenario: Solid-state replacement for electromechanical relays driving solenoids and indicator lamps.

IC Role / Device Role / Timing Role: Low-side or high-side switching element in 24 V DC output stages.

Use Value: Verified -55°C to +150°C operating range ensures reliability across industrial ambient extremes; low thermal resistance sustains full current in confined enclosures.

Use Scenario: Door lock actuator and interior lighting control in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO to resistive/inductive loads.

Use Value: Avalanche energy rating protects against inductive flyback from motor windings; RoHS/halogen-free compliance meets automotive material restrictions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7157DP-T1-GE3RDS(on) = 12.5 mΩ @ VGS = -10 V; Qg = 27 nC; same PQFN 3×3 packageSlightly lower conduction loss but reduced avalanche rating (EAS = 120 mJ)Preferred where efficiency dominates over ruggedness; verify layout compatibility with different pin 1 marking
DMT3006LPS-13RDS(on) = 15.5 mΩ @ VGS = -10 V; Qg = 35 nC; 3.3 mm × 3.3 mm TDFNLarger footprint and higher gate charge increase board area and driver demandConsider only if supply chain constraints require Diodes Inc. sourcing; thermal performance less optimized than IRFHM9331TR2PBF

Compared with Si7157DP-T1-GE3 and DMT3006LPS-13, IRFHM9331TR2PBF offers superior avalanche ruggedness and lower thermal resistance to PCB-critical for unclamped inductive loads and space-constrained thermal designs-while maintaining competitive RDS(on) and gate drive requirements.

Availability

IRFHM9331TR2PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, and industrial PLC I/O modules requiring stable component supply and long-term design-in support.

Supply support for IRFHM9331TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-reliability, low-voltage DC power switching in portable, industrial, and automotive systems where thermal efficiency and ruggedness are essential.

FAQ

What is the maximum safe operating temperature for IRFHM9331TR2PBF?

The device has a specified junction temperature range of -55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and operation above this value risks permanent degradation. Thermal design must ensure that steady-state power dissipation, combined with RθJA = 76°C/W and ambient conditions, keeps actual TJ below 150°C-verified using the transient thermal impedance curve (Fig 11) for pulsed loads.

Can IRFHM9331TR2PBF be used in synchronous rectification?

Yes-it features a low VSD of -1.2 V at -2.8 A and fast body diode recovery (trr = 64–96 ns, Qrr = 25–38 nC), making it suitable for low-voltage synchronous rectification in buck converters or OR-ing applications. However, its P-channel topology requires gate drive referenced to the source, limiting use to high-side configurations unless paired with level-shifting circuitry.

Is IRFHM9331TR2PBF pin-compatible with earlier IRFHM9331TRPBF?

Yes-both share identical 8-pin PQFN 3 mm × 3 mm package dimensions, pinout configuration, and marking layout. The TR2PBF variant differs only in tape-and-reel packaging quantity (400 units vs. 4000 for TRPbF) and reflects updated EOL status per notice #259; electrical and thermal specifications remain unchanged.

Does IRFHM9331TR2PBF require a gate resistor for stability?

A gate resistor (typically 5–22 Ω) is recommended to dampen parasitic oscillation caused by gate-drain capacitance and PCB trace inductance. Test data shows stable switching with RG = 6.8 Ω (Fig 19a); omitting it may cause ringing, increased EMI, and premature gate oxide stress-especially at high di/dt or when driving inductive loads.

IRFHM9331TR2PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-PowerTDFN
Packaging:
Cut Tape (CT)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id:
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1543 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PQFN (3x3)

IRFHM9331TR2PBF FAQ

1.How can I place an order for IRFHM9331TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM9331TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM9331TR2PBF reliable?

The price and inventory of IRFHM9331TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM9331TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFHM9331TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM9331TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM9331TR2PBF?

IRFHM9331TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM9331TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM9331TR2PBF?

For technical support, including IRFHM9331TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM9331TR2PBF requirements.

6.How does Aetrix verify that IRFHM9331TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFHM9331TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM9331TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFHM9331TR2PBF?

All IRFHM9331TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM9331TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM9331TR2PBF part is unused and in its original packaging.

Return procedure for IRFHM9331TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFHM9331TR2PBF Tags

  • IRFHM9331TR2PBF
  • IRFHM9331TR2PBF PDF
  • IRFHM9331TR2PBF Datasheet
  • IRFHM9331TR2PBF Specifications
  • IRFHM9331TR2PBF Images
  • Infineon Technologies
  • Infineon Technologies IRFHM9331TR2PBF
  • Buy IRFHM9331TR2PBF
  • IRFHM9331TR2PBF Price
  • IRFHM9331TR2PBF Distributor
  • IRFHM9331TR2PBF Supplier
  • IRFHM9331TR2PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER