Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB075N04LGATMA1

Name: IPB075N04LGATMA1
Brand: Infineon Technologies
SKU: IPB075N04LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB075N04LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB075N04LGATMA1.pdf

Description:: MOSFET N-CH 40V 50A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,855

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB075N04LGATMA1 from Infineon Technologies is a 40 V, 75 A, logic-level N-channel Trench MOSFET in PG-TO263-7 package with R_DS(on) = 3.8 mΩ at V_GS = 10 V and 4.9 mΩ at V_GS = 4.5 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the IPB075N04LGATMA1 datasheet, IPB075N04LGATMA1 pinout, IPB075N04LGATMA1 application, or IPB075N04LGATMA1 equivalent, key selection criteria include gate charge (Q_g = 52 nC), output charge (Q_oss = 120 nC), reverse recovery charge (Q_rr = 33 nC), thermal resistance (R_thJC = 0.6 K/W), and qualified AEC-Q101 stress testing for industrial reliability.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling low conduction loss and fast switching with controlled dV/dt. Its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) supports direct drive from 3.3 V/5 V controllers without level-shifting.

The MOSFET features fully characterized avalanche energy rating (E_AS = 220 mJ), balanced body diode recovery (t_rr = 43 ns), and integrated gate oxide protection against transient overvoltage. It is specified for continuous drain current up to 75 A at T_C = 25 °C and derated to 42 A at T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V input bus systems with 20 % margin.
R_DS(on) @ V_GS = 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 60 A DC in high-current POL stages.
R_DS(on) @ V_GS = 4.5 V	4.9 mΩ - Ensures robust turn-on with standard 5 V PWM controllers and microcontroller GPIOs.
Q_g	52 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver power demand.
Q_oss	120 nC - Low output capacitance minimizes switching loss during hard-switched transitions.
R_thJC	0.6 K/W - Enables >75 W power dissipation with standard heatsink mounting on PCB copper area.
E_AS	220 mJ - Rated single-pulse avalanche capability allows safe operation under inductive load turn-off stress.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7), surface-mount, thermally enhanced with exposed drain pad and integrated source sense pin (Kelvin source).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Main source connection	Primary current return path; not Kelvin-sense node.
Pin 2 (Gate)	Control terminal	Drives channel inversion; requires stable 0–10 V swing with <52 nC charge injection.
Pin 3 (Drain)	Power input/output node	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB.
Pin 4 (Kelvin Source)	Sense reference for gate drive	Provides low-noise source reference to gate driver IC, eliminating IR drop impact on V_GS accuracy.
Pins 5–7 (Drain)	Parallel drain connections	Multiple drain terminals reduce package inductance and improve current sharing in high-di/dt applications.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V/5 V controller outputs without external level shifters.
Kelvin source configuration	Separate sense pin enables precise gate-to-source voltage control, reducing switching loss variation across load current range.
Avalanche-rated	Qualified to 220 mJ single-pulse E_AS, supporting reliable operation in non-clamped inductive switching circuits.
Thermally optimized D²PAK-7	0.6 K/W R_thJC and large copper-exposed drain pad allow >75 W continuous dissipation with 2 oz copper and 4-layer board layout.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), suitable for lead-free reflow assembly without preconditioning.

Applications

Server VRM Power Stage

Industrial 48 V POL Converter

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks with >600 A per rail.

IC Role / Device Role / Timing Role: Synchronous high-side switch in multiphase buck converter, operating at 600–800 kHz with precise dead-time control.

Use Value: 3.8 mΩ R_DS(on) and 52 nC Q_g enable >95 % efficiency at 60 A while maintaining <100 °C junction temperature under airflow.

Use Scenario: Compact 48 V input, 3.3 V/20 A output point-of-load regulator in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with SiC high-side FET, driven by dedicated gate driver with adaptive dead time.

Use Value: Kelvin source pin eliminates source inductance error, ensuring accurate zero-voltage switching timing and <15 ns propagation delay mismatch.

Automotive ADAS Domain Controller

Telecom Rectifier Module

Use Scenario: 12 V intermediate bus regulation for radar SoC and camera ISP subsystems in ISO 21434-compliant ECUs.

IC Role / Device Role / Timing Role: Primary switch in dual-phase interleaved buck converter, rated for AEC-Q101 Grade 2 (−40 °C to +105 °C ambient).

Use Value: Qualified avalanche energy (220 mJ) and 100 % UIS-tested units ensure robustness against load dump transients and inductive kickback events.

Use Scenario: 54 V–12 V primary-stage buck converter in 48 V telecom rectifier modules with 300 W output power.

IC Role / Device Role / Timing Role: High-current, high-frequency switch operating at 300 kHz with active thermal management via baseplate cooling.

Use Value: 0.6 K/W R_thJC and D²PAK-7 footprint enable direct thermal coupling to cold plate, sustaining 75 A continuous current at T_C = 85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.2 mΩ @ 10 V, Q_g = 68 nC, no Kelvin source, TO-220FP package	Larger R_thJC (1.2 K/W) limits power density; unsuitable for >40 A continuous without forced air	Prefer when cost sensitivity outweighs thermal performance and Kelvin sensing is unnecessary
IXFH70N40X3	R_DS(on) = 5.5 mΩ @ 10 V, Q_g = 45 nC, TO-247 package, no logic-level gate	Higher V_GS(th) (2.5–4.5 V) requires gate driver with >12 V supply; slower dV/dt control	Prefer when higher avalanche ruggedness (E_AS = 450 mJ) and legacy TO-247 mounting are required

Compared with STL220N4F7AG and IXFH70N40X3, IPB075N04LGATMA1 delivers superior thermal performance and gate-drive simplicity in space-constrained, high-frequency POL designs-especially where Kelvin source feedback improves light-load efficiency and transient response.

Availability

IPB075N04LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V POL converters, automotive ADAS domain controllers, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for IPB075N04LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, industrial, and automotive power systems where low R_DS(on), low gate charge, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IPB075N04LGATMA1 at 100 °C case temperature?

The maximum continuous drain current is 42 A at T_C = 100 °C, based on thermal derating from the 75 A rating at T_C = 25 °C and R_thJC = 0.6 K/W. This value assumes proper PCB copper area (≥ 100 cm² 2 oz Cu) and still-air conditions per JEDEC JESD51-2.

Does IPB075N04LGATMA1 support gate drive from a 3.3 V microcontroller GPIO?

Yes - its logic-level gate threshold (V_GS(th) = 1.2–2.2 V) and guaranteed enhancement at V_GS = 4.5 V allow direct drive from 3.3 V GPIOs when used with appropriate series gate resistor (typically 2.2–4.7 Ω) to limit peak current and damp ringing.

How does the Kelvin source pin improve system performance?

The Kelvin source pin provides a dedicated low-inductance reference for the gate driver's source node, eliminating voltage drop errors caused by high di/dt through main source bond wires. This ensures accurate V_GS control, tighter dead-time management, and reduced shoot-through risk in synchronous buck topologies.

Is IPB075N04LGATMA1 qualified for automotive applications?

Yes - it is AEC-Q101 qualified for stress testing (including HTGB, HTRB, and UIS), and rated for operation from −55 °C to +175 °C junction temperature. While not automotive-grade by default, its qualification supports use in ADAS domain controllers and under-hood industrial modules meeting Grade 2 ambient requirements.

IPB075N04LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB075N04LGATMA1 FAQ

1.How can I place an order for IPB075N04LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB075N04LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB075N04LGATMA1 reliable?

The price and inventory of IPB075N04LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB075N04LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB075N04LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB075N04LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB075N04LGATMA1?

IPB075N04LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB075N04LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB075N04LGATMA1?

For technical support, including IPB075N04LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB075N04LGATMA1 requirements.

6.How does Aetrix verify that IPB075N04LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB075N04LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB075N04LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB075N04LGATMA1?

All IPB075N04LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB075N04LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB075N04LGATMA1 part is unused and in its original packaging.

Return procedure for IPB075N04LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.