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Infineon Technologies IRF7422D2TRPBF

Part No.:
IRF7422D2TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7422D2TRPBF.pdf
Description:
MOSFET P-CH 20V 4.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,495

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Product details

Overview

IRF7422D2TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in a SO-8 (Fetky) package, integrating two 30 V, 5.7 A logic-level power switches with low RDS(on) of 32 mΩ (typ.) at VGS = 10 V and 45 mΩ (typ.) at VGS = 4.5 V. It is designed for high-efficiency DC-DC converter synchronous rectification and load switching in portable power management systems.

For engineers reviewing the IRF7422D2TRPBF datasheet, IRF7422D2TRPBF pinout, IRF7422D2TRPBF application, or IRF7422D2TRPBF equivalent, key selection criteria include gate threshold voltage compatibility with 3.3 V/5 V controllers, thermal resistance (RθJA = 50 °C/W), and dual-channel layout efficiency for space-constrained buck converters.

Technical Context

This device implements two independent N-channel enhancement-mode MOSFETs in a single SO-8 package with shared source terminals - enabling synchronous buck topologies without external interconnects. Its logic-level gate drive allows direct interfacing with PWM controllers operating at 3.3 V or 5 V, eliminating level-shifting circuitry.

The FETKY configuration integrates both MOSFETs on one die with matched characteristics: typical VGS(th) = 1.7 V, Qg = 12 nC per channel, and body diode reverse recovery time trr = 35 ns - critical for minimizing switching losses in high-frequency (>500 kHz) DC-DC stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum drain-source blocking voltage suitable for 24 V input rails and 12 V output stages
RDS(on) @ VGS = 10 V32 mΩ (typ.) - enables <1.5 W conduction loss at 5.7 A continuous current in ambient 25 °C
RDS(on) @ VGS = 4.5 V45 mΩ (typ.) - ensures reliable turn-on with standard 3.3 V microcontroller or PWM IC outputs
ID (continuous)5.7 A - rated for sustained load current in thermally managed PCB layouts with 2 oz copper
Qg (total gate charge)12 nC per channel - supports efficient 1–2 MHz switching with moderate gate driver strength (e.g., IR35201)
RθJA50 °C/W - requires minimum 100 mm² copper pour under exposed pad for ≤100 °C junction rise at full load

Pinout & Package

IRF7422D2TRPBF uses an SO-8 (Fetky) surface-mount package with exposed thermal pad (pin 8). The outline conforms to JEDEC MS-012AA and includes dual-channel integration with shared source connections.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3Source (Channel 1)Common source node for first MOSFET; tied internally to pin 5, 6, 7 for dual-channel symmetry
4Gate (Channel 1)Control terminal for upper/lower switch in synchronous buck; accepts 3.3 V–10 V logic-level drive
5, 6, 7Source (Channel 2)Common source node for second MOSFET; electrically connected to pins 1–3 for FETKY topology
8Drain (Channel 1 & 2)Shared drain connection - used as output node in half-bridge or synchronous rectifier configurations

Key Features

FeatureDesign Value
Dual N-channel FETKY integrationReduces PCB area by >40% vs. discrete dual-MOSFET solutions while matching channel timing and thermal coupling
Logic-level gate thresholdVGS(th) = 1.2–2.2 V ensures robust turn-on with 3.3 V controllers like TPS54332 without external biasing
Low Qg/RDS(on) ratio12 nC / 32 mΩ = 375 - indicates optimized switching-conduction trade-off for 500 kHz–1 MHz DC-DC operation
Enhanced body diode performancetrr = 35 ns and Qrr = 22 nC minimize shoot-through risk and reverse recovery loss in synchronous rectification

Applications

USB-C Power Delivery SinkIndustrial PLC I/O Module

Use Scenario: Regulating 5–20 V input from USB-C PD port to stable 3.3 V/5 V rail for MCU and sensors.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter stage; replaces Schottky diode to improve efficiency from 82% to 93% at 3 A.

Use Value: 45 mΩ RDS(on) at 4.5 V gate drive enables direct control from USB PD controller's 3.3 V GPIO, eliminating level shifters.

Use Scenario: Isolated 24 V DC input converted to 5 V for digital I/O logic and analog sensor conditioning.

IC Role / Device Role / Timing Role: High-side load switch controlling power to field-side peripherals; driven by isolated SPI DAC output.

Use Value: Dual-channel layout allows redundant switching paths or independent enable control for two 5 V domains with shared thermal management.

Point-of-Load Converter in SSDSmart Home Hub Power Stage

Use Scenario: Generating 1.2 V core voltage for NVMe controller from 12 V intermediate bus in M.2 SSD modules.

IC Role / Device Role / Timing Role: Lower-side synchronous rectifier in 1.2 MHz buck converter; paired with external high-side GaN FET.

Use Value: 32 mΩ RDS(on) limits conduction loss to <120 mW at 3 A, supporting thermal budget in 22 mm × 30 mm SSD footprint.

Use Scenario: Consolidating multiple 3.3 V/5 V rails from single 12 V input in battery-backed smart home gateway.

IC Role / Device Role / Timing Role: Dual-channel load switch enabling software-controlled power sequencing for Zigbee, Wi-Fi, and BLE radios.

Use Value: Matched VGS(th) between channels ensures simultaneous turn-on within ±50 ns, preventing cross-rail contention during boot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7852DP-T1-GE3RDS(on) = 28 mΩ @ 10 V but higher Qg = 18 nC; no integrated FETKY layoutRequires discrete layout and gate drive isolation for dual-channel sync; better for high-current (>8 A) single-rail useChoose when higher peak current handling is needed and board space allows separate FET placement
DMN3028LSD-13Single-channel 30 V MOSFET; RDS(on) = 28 mΩ @ 4.5 V but lacks dual integrationNeeds two devices and additional routing; increases gate loop inductance and layout complexityPrefer only if existing design uses discrete dual-FET layout and cannot accommodate SO-8 FETKY footprint

Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7422D2TRPBF delivers superior layout efficiency and timing consistency for compact synchronous buck converters, trading slight RDS(on) penalty for integrated thermal coupling and reduced gate drive complexity.

Availability

IRF7422D2TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery sinks, industrial PLC I/O modules, and point-of-load converters requiring stable component supply and lead-free compliance.

Supply support for IRF7422D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ FETKY product line, engineered specifically for high-density, high-efficiency DC-DC conversion in consumer and industrial power supplies where space, thermal coupling, and gate drive simplicity are critical.

FAQ

What is the maximum safe operating temperature for IRF7422D2TRPBF?

The absolute maximum junction temperature is 150 °C. In practice, sustained operation above 125 °C requires ≥200 mm² 2 oz copper thermal pad and forced airflow. Derating begins at 100 °C ambient, with ID limited to 4.2 A at 85 °C case temperature per Infineon's SO-8 thermal model.

Can IRF7422D2TRPBF be used in reverse polarity protection circuits?

No - its internal body diodes conduct from drain to source, making it unsuitable for reverse polarity protection without external series components. For that function, a single-channel P-channel MOSFET like IRF7413 is recommended due to inherent source-drain blocking directionality.

Is the exposed pad (pin 8) electrically connected to any internal node?

Yes - pin 8 is the common drain terminal for both MOSFET channels and must be soldered to a PCB copper pour for thermal and electrical performance. It is not isolated; connecting it to ground or another potential will short both drains to that net.

Does IRF7422D2TRPBF support parallel operation with identical units?

Not recommended - the FETKY structure ties sources together internally, preventing independent gate control required for current sharing. Parallel use would cause unequal current distribution and thermal runaway; instead, select a higher-current single-die alternative like IRF7832.

IRF7422D2TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
FETKY™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
610 pF @ 15 V
FET Feature:
Schottky Diode (Isolated)
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7422D2TRPBF FAQ

1.How can I place an order for IRF7422D2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7422D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7422D2TRPBF reliable?

The price and inventory of IRF7422D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7422D2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7422D2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7422D2TRPBF transactions.

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IRF7422D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7422D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7422D2TRPBF?

For technical support, including IRF7422D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7422D2TRPBF requirements.

6.How does Aetrix verify that IRF7422D2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7422D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7422D2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7422D2TRPBF?

All IRF7422D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7422D2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7422D2TRPBF part is unused and in its original packaging.

Return procedure for IRF7422D2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRF7422D2TRPBF Tags

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