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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TSM10NC60CF 600V, 10A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,408	RFQ	-	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	750mOhm @ 2.5A, 10V	4.5V @ 250µA	33 nC @ 10 V	±30V	1652 pF @ 50 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220S
IRFR12N25D MOSFET N-CH 250V 14A DPAK Infineon Technologies	9,566	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	14A (Tc)	10V	260mOhm @ 8.4A, 10V	5V @ 250µA	35 nC @ 10 V	±30V	810 pF @ 25 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
NTB30N20 MOSFET N-CH 200V 30A D2PAK onsemi	5,605	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	30A (Ta)	10V	81mOhm @ 15A, 10V	4V @ 250µA	100 nC @ 10 V	±30V	2335 pF @ 25 V	-	2W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
NTB30N20G MOSFET N-CH 200V 30A D2PAK onsemi	5,327	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	30A (Ta)	10V	81mOhm @ 15A, 10V	4V @ 250µA	100 nC @ 10 V	±30V	2335 pF @ 25 V	-	2W (Ta), 214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
SPI80N10L MOSFET N-CH 100V 80A TO262-3 Infineon Technologies	7,820	RFQ	Datasheet	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	4.5V, 10V	14mOhm @ 58A, 10V	2V @ 2mA	240 nC @ 10 V	±20V	4540 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3-1
SPP80N10L MOSFET N-CH 100V 80A TO220-3 Infineon Technologies	5,121	RFQ	Datasheet	SIPMOS®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	80A (Tc)	4.5V, 10V	14mOhm @ 58A, 10V	2V @ 2mA	240 nC @ 10 V	±20V	4540 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
2SJ380(F) MOSFET P-CH 100V 12A TO220NIS Toshiba Semiconductor and Storage	8,145	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	12A (Ta)	4V, 10V	210mOhm @ 6A, 10V	2V @ 1mA	48 nC @ 10 V	±20V	1100 pF @ 10 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220NIS
TSM80N1R2CI C0G MOSFET N-CH 800V 5.5A ITO220AB Taiwan Semiconductor Corporation	7,360	RFQ	-	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	5.5A (Tc)	10V	1.2Ohm @ 1.8A, 10V	4V @ 250µA	19.4 nC @ 10 V	±30V	685 pF @ 100 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220AB
TSM80N950CI C0G MOSFET N-CH 800V 6A ITO220AB Taiwan Semiconductor Corporation	2,369	RFQ	-	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	6A (Tc)	10V	950mOhm @ 2A, 10V	4V @ 250µA	19.6 nC @ 10 V	±30V	691 pF @ 100 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220AB
FQA36P15_F109 MOSFET P-CH 150V 36A TO3PN onsemi	3,763	RFQ	-	QFET®	TO-3P-3, SC-65-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	150 V	36A (Tc)	10V	90mOhm @ 18A, 10V	4V @ 250µA	105 nC @ 10 V	±30V	3320 pF @ 25 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3PN
IRL2203NSTRR MOSFET N-CH 30V 116A D2PAK Infineon Technologies	9,708	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	116A (Tc)	4.5V, 10V	7mOhm @ 60A, 10V	3V @ 250µA	60 nC @ 4.5 V	±16V	3290 pF @ 25 V	-	3.8W (Ta), 180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFU9N20D MOSFET N-CH 200V 9.4A IPAK Infineon Technologies	3,254	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	9.4A (Tc)	10V	380mOhm @ 5.6A, 10V	5.5V @ 250µA	27 nC @ 10 V	±30V	560 pF @ 25 V	-	86W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
PSMN009-100P,127 MOSFET N-CH 100V 75A TO220AB Nexperia USA Inc.	9,145	RFQ	Datasheet	TrenchMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	8.8mOhm @ 25A, 10V	4V @ 1mA	156 nC @ 10 V	±20V	8250 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
TSM035NB04LCZ 40V, 157A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,964	RFQ	-	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	18A (Ta), 157A (Tc)	4.5V, 10V	3.5mOhm @ 18A, 10V	2.5V @ 250µA	111 nC @ 10 V	±20V	6350 pF @ 20 V	-	2W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220
TSM60NB600CP 600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	4,384	RFQ	-	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 2.1A, 10V	4V @ 250µA	13 nC @ 10 V	±30V	516 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)
TSM60NB600CH 600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	6,031	RFQ	-	-	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	600mOhm @ 2.1A, 10V	4V @ 250µA	13 nC @ 10 V	±30V	516 pF @ 100 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251 (IPAK)
FDB2670 MOSFET N-CH 200V 19A TO263AB onsemi	7,003	RFQ	Datasheet	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	19A (Ta)	10V	130mOhm @ 10A, 10V	4.5V @ 250µA	38 nC @ 10 V	±20V	1320 pF @ 100 V	-	93W (Tc)	-65°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
IRF7459 MOSFET N-CH 20V 12A 8SO Infineon Technologies	6,921	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	12A (Ta)	2.8V, 10V	9mOhm @ 12A, 10V	2V @ 250µA	35 nC @ 4.5 V	±12V	2480 pF @ 10 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF1010NPBF MOSFET N-CH 55V 85A TO220AB Infineon Technologies	3,597	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	85A (Tc)	10V	11mOhm @ 43A, 10V	4V @ 250µA	120 nC @ 10 V	±20V	3210 pF @ 25 V	-	180W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRF6603 MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies	3,222	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MT	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	27A (Ta), 92A (Tc)	4.5V, 10V	3.4mOhm @ 25A, 10V	2.5V @ 250µA	72 nC @ 4.5 V	+20V, -12V	6590 pF @ 15 V	-	3.6W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MT

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