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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP80N10L

Name: SPP80N10L
Brand: Infineon Technologies
SKU: SPP80N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP80N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP80N10L.pdf

Description:: MOSFET N-CH 100V 80A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP80N10L from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power transistor in PG-TO220-3-1 package, rated for 100 V V_DS, 14 mΩ R_DS(on) at V_GS = 10 V and I_D = 58 A, with 175 °C maximum junction temperature and avalanche energy rating of 700 mJ. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the SPP80N10L datasheet, SPP80N10L pinout, SPP80N10L application, or SPP80N10L equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V, robust dv/dt immunity (6 kV/µs), and integrated avalanche-rated body diode for inductive load handling.

Technical Context

This device employs Infineon's SIPMOS™ trench-gate technology to achieve low on-resistance and fast switching with controlled gate charge (Q_g = 160–240 nC). Its logic-level gate enables direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The MOSFET features a fully rated reverse diode (I_S = 80 A continuous, t_rr = 95–140 ns) and is characterized for operation up to 175 °C with thermal resistance R_thJC = 0.6 K/W - enabling high-power density designs in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V bus systems with margin for transients and ringing
R_DS(on) @ V_GS = 10 V	14 mΩ max - delivers ≤ 65 W conduction loss at 80 A, enabling high-efficiency power stages
I_D (continuous, T_C = 25 °C)	80 A - suitable for high-current switching in UPS, welders, and battery-powered inverters
E_AS	700 mJ - withstands single-pulse inductive energy without failure, critical for relay/motor snubbing
dv/dt rating	6 kV/µs - resists false turn-on in noisy high-speed switching applications like half-bridge topologies
V_GS(th)	1.2–2.0 V - ensures reliable turn-on with standard logic-level drivers (e.g., STM32 GPIO, PIC PWM outputs)
Q_g	160–240 nC - determines gate driver current requirement (~2 A peak for 100 ns rise time)

Pinout & Package

PG-TO220-3-1 package: through-hole, isolated tab (drain-connected), vertical mounting with heatsink interface. Standard TO-220 footprint with 2.54 mm lead pitch and 4.5 mm lead spacing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; sensitive to ESD
Pin 3 (Drain)	Power output / heat sink interface	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) ≤ 2.0 V enables direct drive from 3.3 V/5 V MCUs without gate driver ICs
Avalanche-rated	700 mJ single-pulse E_AS allows safe operation in inductive switching without external clamping
High-temperature operation	Rated to 175 °C T_j supports compact thermal design in sealed enclosures or high-ambient environments
Low gate charge	Q_g ≤ 240 nC reduces switching losses and eases gate driver selection for >100 kHz operation
Robust body diode	t_rr = 95–140 ns and Q_rr = 330–500 nC minimize commutation losses in synchronous rectification

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in automated machinery.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off (t_f = 20–30 ns) and low R_DS(on) to minimize conduction loss during PWM cycles.

Use Value: Enables >97 % efficiency at 50 A load with minimal heatsink area due to R_thJC = 0.6 K/W.

Use Scenario: Primary-side switch in 1 kW isolated forward converter for factory automation PLC power supply.

IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 50% duty cycle and 80 A peak current.

Use Value: Avalanche rating absorbs leakage inductance spikes without snubber, reducing component count and board space.

Uninterruptible Power Supply (UPS)

Battery Protection Circuit

Use Scenario: Bidirectional power path switch in online UPS output stage managing AC line and battery backup transitions.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch supporting 80 A continuous and 320 A pulsed load currents.

Use Value: 175 °C rating ensures reliability under sustained overload and ambient temperatures up to 70 °C in enclosed cabinets.

Use Scenario: Main discharge FET in 48 V Li-ion battery pack protection module with overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-hardened switch that interrupts fault current within microseconds using internal current sensing.

Use Value: Integrated body diode with t_rr < 140 ns prevents voltage overshoot during rapid current reversal during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 12.5 mΩ @ 10 V, but V_GS(th) = 2.0–4.0 V - less consistent logic-level turn-on	Higher gate threshold increases risk of partial turn-on in 3.3 V systems; requires stronger gate drive	Prefer when higher V_GS margin is acceptable and lower R_DS(on) justifies added drive complexity
STP80NF10	R_DS(on) = 14 mΩ @ 10 V, but no specified avalanche rating and T_jmax = 175 °C not validated per JEDEC	Lacks documented E_AS performance - unsuitable for unclamped inductive loads	Select only in non-inductive, low-dv/dt applications where thermal derating is conservative

Compared with IRFB4115PBF and STP80NF10, SPP80N10L uniquely combines guaranteed logic-level operation, 700 mJ avalanche capability, and full 175 °C qualification - making it the preferred choice for safety-critical, high-reliability industrial switching where gate drive simplicity and ruggedness are jointly required.

Availability

SPP80N10L is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for SPP80N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPP80N10L belongs to Infineon's SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-temperature switching in industrial motor control, power conversion, and battery systems where gate drive simplicity and ruggedness are essential.

FAQ

Is SPP80N10L suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and R_DS(on) = 15–24 mΩ at V_GS = 4.5 V, SPP80N10L achieves full enhancement using standard 3.3 V GPIO outputs. Verified test data shows <58 A conduction capability at 4.5 V, confirming robust logic-level operation without external level shifters.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 58 A at T_C = 100 °C. This is derived from thermal derating curves and reflects actual usable current under sustained thermal conditions with adequate heatsinking. At T_C = 100 °C, power dissipation is limited to ~145 W, consistent with R_thJC = 0.6 K/W and ΔT = 75 K.

Does SPP80N10L have a qualified avalanche rating?

Yes. The device is explicitly rated for single-pulse avalanche energy E_AS = 700 mJ (I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω) and periodic avalanche energy E_AR = 25 mJ. These values are measured and published in the official Infineon datasheet Rev. 2.1, confirming ruggedness for inductive switching.

Can SPP80N10L replace SPI80N10L in existing designs?

Yes - SPP80N10L and SPI80N10L share identical electrical specifications, thermal characteristics, and PG-TO220-3-1 / PG-TO262-3-1 packaging options. The only difference is package variant: SPP80N10L uses PG-TO220-3-1, while SPI80N10L uses PG-TO262-3-1. Mechanical compatibility depends solely on PCB footprint and mounting constraints.

SPP80N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP80N10L FAQ

1.How can I place an order for SPP80N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP80N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP80N10L reliable?

The price and inventory of SPP80N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N10L is usually 5 days.

3.What payment methods are accepted for SPP80N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP80N10L?

SPP80N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP80N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP80N10L?

For technical support, including SPP80N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N10L requirements.

6.How does Aetrix verify that SPP80N10L is sourced from the original manufacturer or authorized distributors?

All SPP80N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N10L meets industry standards.

7.What is the process for return or replacement of SPP80N10L?

All SPP80N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP80N10L part is unused and in its original packaging.

Return procedure for SPP80N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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