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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR12N25D

Name: IRFR12N25D
Brand: Infineon Technologies
SKU: IRFR12N25D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR12N25D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR12N25D.pdf

Description:: MOSFET N-CH 250V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR12N25D from Infineon Technologies (formerly International Rectifier) is a 250 V, 14 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters and SMPS applications. It features R_DS(on) = 0.26 Ω at V_GS = 10 V, Q_g = 23 nC (typ), and 250 mJ single-pulse avalanche energy - enabling robust switching with low conduction and gate-drive losses in compact power stages.

For engineers reviewing the IRFR12N25D datasheet, IRFR12N25D pinout, IRFR12N25D application, or IRFR12N25D equivalent, key selection criteria include its 250 V V_BR(DSS), 0.26 Ω on-resistance at 10 V gate drive, 1.04 °C/W junction-to-case thermal resistance, body diode reverse recovery time of 140 ns, and D-Pak surface-mount compatibility for thermally demanding board-level power designs.

Technical Context

This MOSFET employs planar vertical DMOS structure with optimized charge balance for fast switching and rugged unclamped inductive switching performance. Its low Q_gd/Q_g ratio (≈52%) and fully characterized C_oss (130 pF typ at V_DS = 25 V) support predictable hard-switching behavior in flyback, forward, and active-clamp topologies.

The device integrates a co-packaged, low-V_SD (1.5 V max at 8.4 A) body diode with controlled trr (140 ns) and Q_rr (710 nC), enabling reliable synchronous rectification and freewheeling operation without external diode supplementation in medium-power SMPS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	250 V - Withstands up to 250 V drain-source blocking voltage before avalanche onset; suitable for 200 V bus designs with margin.
R_DS(on) max	0.26 Ω @ V_GS = 10 V, I_D = 8.4 A - Enables <1.5 W conduction loss at 10 A continuous current in PCB-mounted thermal conditions.
Q_g typ	23 nC - Low total gate charge reduces driver power requirement and enables >500 kHz switching in gate-driven topologies.
E_AS	250 mJ - Single-pulse avalanche capability supports reliable operation during transient overvoltage events in inductive loads.
R_θJC	1.04 °C/W - Junction-to-case thermal resistance allows direct heatsinking via PCB copper pour or clip-on heatsink for 144 W P_D dissipation.
trr	140 ns - Body diode reverse recovery time enables stable freewheeling in discontinuous conduction mode (DCM) converters.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal transfer. Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source; Pin 4: Drain (secondary tab connection). The dual-drain configuration improves current sharing and thermal spreading across the PCB footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level gate drive; threshold voltage 3.0–5.0 V ensures reliable turn-on with standard PWM controllers.
2 & 4 (Drain)	Main high-side current path	Electrically tied internally; both pins connect to the MOSFET's drain region and thermal pad - must be soldered to large copper area for thermal management.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive loop; low-inductance layout critical to minimize switching oscillation and EMI.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	≈52% (12/23 nC) - Reduces Miller-induced switching delay and improves controllability during dV/dt transitions.
Fully characterized C_oss	130 pF (typ, V_DS = 25 V) - Enables accurate snubber design and predictive zero-voltage switching (ZVS) timing in resonant converters.
High dv/dt immunity	9.3 V/ns peak diode recovery dv/dt - Resists false turn-on during fast voltage transients across drain-source terminals.
Rugged avalanche rating	250 mJ single-pulse, 14 mJ repetitive - Supports reliable operation under inductive load dump or startup surge without derating.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-efficiency 12 V input → 1.2 V/100 A output buck converter in server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with precise gate timing control.

Use Value: 0.26 Ω R_DS(on) minimizes conduction loss at high DC current; low Q_g enables fast edge rates compatible with digital multiphase controllers.

Use Scenario: 48 V to 12 V isolated forward converter in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 250 V blocking and 14 A peak current.

Use Value: 250 V V_BR(DSS) provides margin above reflected 48 V bus spikes; 250 mJ E_AS absorbs clamp energy without failure.

Telecom AC-DC Adapter

Motor Drive Half-Bridge

Use Scenario: 380 V PFC front-end followed by 380 V → 12 V LLC resonant converter in telecom rectifier units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in LLC half-bridge output stage.

Use Value: Fast 140 ns trr and low V_SD (1.5 V) reduce body diode conduction loss during dead-time; D-Pak thermal performance sustains 100% duty cycle.

Use Scenario: 24 V/48 V BLDC motor drive in HVAC fan module with integrated gate driver.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg controlling phase current commutation.

Use Value: Dual-drain pinout (Pins 2 & 4) lowers source inductance and improves shoot-through immunity; 9.7 A continuous current at T_C = 100 °C supports sustained torque delivery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK25Z	250 V, 12 A, R_DS(on) = 0.28 Ω, TO-220 package, no dual-drain configuration	Requires through-hole mounting and external heatsink; higher R_DS(on) increases conduction loss at >8 A	Preferred where mechanical robustness and serviceability outweigh board space constraints
IXTP12N25P	250 V, 12 A, R_DS(on) = 0.27 Ω, TO-220FP package, lower Q_g (18 nC), but no avalanche rating specified	Lacks documented E_AS rating; unsuitable for unclamped inductive switching without external protection	Selected when gate drive efficiency is prioritized and circuit topology guarantees clamped switching

Compared with STP12NK25Z and IXTP12N25P, IRFR12N25D uniquely combines D-Pak surface-mount compatibility, dual-drain thermal enhancement, 250 mJ avalanche energy, and 14 A continuous current - making it optimal for space-constrained, high-reliability SMPS where thermal density and transient robustness are critical.

Availability

IRFR12N25D is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, industrial SMPS, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRFR12N25D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon-based power semiconductors.

IRFR12N25D belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low gate charge, rugged avalanche performance, and thermal reliability are essential.

FAQ

Is IRFR12N25D suitable for logic-level gate drive?

No - IRFR12N25D is not a logic-level MOSFET. Its gate threshold voltage range is 3.0–5.0 V, and full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) = 0.26 Ω. Driving it with 3.3 V or 5 V microcontroller outputs will result in incomplete turn-on and excessive conduction loss. A dedicated gate driver or level-shifting circuit is required.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 9.7 A, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area for thermal conduction and accounts for linear derating from 14 A at 25°C using the 0.96 W/°C factor.

Can IRFR12N25D replace IRFU12N25D in existing designs?

Yes - IRFR12N25D and IRFU12N25D share identical electrical specifications and die, differing only in package: IRFR12N25D uses D-Pak (TO-252AA), while IRFU12N25D uses I-Pak (TO-251AA). The pinout is identical (G-D-S-D), and thermal performance is comparable, though D-Pak offers slightly better PCB thermal spreading due to larger exposed drain pad area.

Does IRFR12N25D require a gate resistor for stability?

Yes - a gate resistor (typically 6.8 Ω, per datasheet test condition) is recommended to dampen parasitic oscillation caused by gate loop inductance and device capacitance. Omitting it may cause ringing, increased switching loss, and potential gate oxide stress, especially at >200 kHz switching frequencies.

IRFR12N25D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR12N25D FAQ

1.How can I place an order for IRFR12N25D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR12N25D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR12N25D reliable?

The price and inventory of IRFR12N25D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR12N25D is usually 5 days.

3.What payment methods are accepted for IRFR12N25D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR12N25D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR12N25D?

IRFR12N25D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR12N25D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR12N25D?

For technical support, including IRFR12N25D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR12N25D requirements.

6.How does Aetrix verify that IRFR12N25D is sourced from the original manufacturer or authorized distributors?

All IRFR12N25D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR12N25D meets industry standards.

7.What is the process for return or replacement of IRFR12N25D?

All IRFR12N25D units undergo pre-shipment inspection (PSI). If there is an issue with IRFR12N25D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR12N25D part is unused and in its original packaging.

Return procedure for IRFR12N25D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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