Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU9N20D

Name: IRFU9N20D
Brand: Infineon Technologies
SKU: IRFU9N20D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFU9N20D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU9N20D.pdf

Description:: MOSFET N-CH 200V 9.4A IPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,254

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFU9N20D from Infineon Technologies (formerly International Rectifier) is a 200V, 9.4A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency DC-DC converters and offline SMPS topologies. It features 0.38Ω R_DS(on) at V_GS = 10V, 18–27nC total gate charge, and fully characterized C_oss (74pF effective), enabling efficient hard-switching operation in forward and flyback converters.

For engineers reviewing the IRFU9N20D datasheet, IRFU9N20D pinout, IRFU9N20D application, or IRFU9N20D equivalent, key selection criteria include its 200V V_BR(DSS), 9.4A continuous drain current at T_C = 25°C, 86W power dissipation, 1.75°C/W junction-to-case thermal resistance, and body diode reverse recovery time of 130ns - all critical for telecom 48V-input SMPS design and industrial power supply layout.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized charge distribution to minimize switching losses. Its low Q_gd/Q_gs ratio (≈1.9:1 typ.) supports fast, controllable turn-off, while the fully characterized C_oss curve (40–670pF across 1.0V–160V) enables accurate snubber and resonant timing calculations in ZVS/ZCS topologies.

The device integrates a robust intrinsic body diode with 5.6A avalanche-rated capability (E_AS = 100mJ single-pulse) and 130ns t_rr at I_F = 5.6A, making it suitable for synchronous rectification and unclamped inductive switching where diode recovery behavior directly impacts EMI and voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	200V - Withstands 48V-input forward converter primary-side blocking with ≥4× safety margin against line transients.
R_DS(on) max	0.38Ω @ V_GS = 10V - Limits conduction loss to ≤3.4W at 9.4A, enabling compact heatsinking in 100kHz+ designs.
Q_g typ./max	18–27nC - Determines gate driver current requirement (≥1.8A peak for 15ns rise time) and switching energy overhead.
C_oss(eff)	74pF - Defines hard-switching turn-on loss (E_on ≈ ½·C_oss·V_DS²) and impacts zero-voltage switching threshold.
t_rr	130ns - Sets minimum dead-time requirement in half-bridge configurations to prevent shoot-through during diode commutation.
R_θJC	1.75°C/W - Enables direct thermal coupling to PCB copper pour or heatsink for 86W dissipation without forced air.

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10V drive for full R_DS(on); ±30V absolute max rating protects against gate oxide rupture.
Pin 2 (D)	Drain terminal / thermal pad	Primary high-side switching node; electrically and thermally connected to exposed copper tab - must be routed to ground plane or heatsink.
Pin 3 (S)	Source terminal	Reference node for gate drive; forms return path for load current and body diode conduction; defines local ground for driver IC placement.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	9.0–14nC - Reduces Miller-induced turn-off delay and improves immunity to dv/dt-induced false triggering in high-side switching.
Fully characterized C_oss vs. V_DS	40–670pF range - Enables precise calculation of turn-on loss and resonant tank behavior in LLC and active clamp topologies.
Lead-free construction	RoHS-compliant Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow without baking.
Avalanche-rated operation	E_AS = 100mJ (single-pulse) - Supports reliable operation under inductive fault conditions without external clamping in telecom power supplies.

Applications

Telecom 48V Forward Converter

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in isolated 48V-input forward converter delivering 12V/20A output for base station power modules.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–500kHz, handling 9.4A peak drain current and 200V blocking duty.

Use Value: Low R_DS(on) and 130ns t_rr reduce conduction loss and dead-time penalty, improving efficiency by ≥1.2% over legacy 0.5Ω MOSFETs.

Use Scenario: Secondary-side synchronous rectifier in universal-input (90–264VAC) 24V/5A adapter with active clamp flyback topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal; conducts 5.6A average current with bidirectional body diode recovery.

Use Value: 74pF C_oss(eff) and 1.3V V_SD minimize reverse recovery loss and forward conduction drop, increasing light-load efficiency by 2.8%.

Automotive DC-DC Converter

LED Driver Power Stage

Use Scenario: Step-down converter in 24V vehicle system powering infotainment ECUs, requiring -40°C to +125°C operation.

IC Role / Device Role / Timing Role: High-efficiency buck switch rated for 175°C junction temperature, operating at 300kHz with 6.7A derated current at T_C = 100°C.

Use Value: 0.23V/°C V_BR(DSS) tempco ensures stable breakdown margin across automotive ambient extremes, preventing premature failure.

Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 36–72V input and 48V/1.5A output.

IC Role / Device Role / Timing Role: High-side switch controlling inductor current in discontinuous conduction mode (DCM), subjected to repetitive 38A pulsed drain current.

Use Value: 38A I_DM rating and 100mJ E_AS withstand inrush and short-circuit events without desaturation, eliminating need for external current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK20ZFP	200V, 9A, R_DS(on) = 0.42Ω, TO-220FP package, no C_oss characterization	Through-hole mounting only; higher R_DS(on) increases conduction loss by 10.5% at 9.4A	Select when board space allows through-hole assembly and thermal mass of TO-220FP suffices for 86W dissipation.
IXTP9N20P	200V, 9A, R_DS(on) = 0.39Ω, TO-220 package, 22nC Q_g, no avalanche rating	Lacks E_AS spec; unsuitable for unclamped inductive loads or telecom surge testing	Prefer for fixed-frequency hard-switched inverters where avalanche stress is absent and TO-220 mechanical stability is required.

Compared with STP9NK20ZFP and IXTP9N20P, IRFU9N20D offers superior thermal performance via D-Pak's 1.75°C/W R_θJC, verified C_oss data for resonant design, and guaranteed 100mJ avalanche energy - making it the only choice for compact, high-reliability 48V telecom SMPS where layout density and transient robustness are non-negotiable.

Availability

IRFU9N20D is available at Aetrix Electronics and suitable for telecom power supplies, industrial AC-DC adapters, automotive DC-DC converters, and LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for IRFU9N20D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line was originally developed by International Rectifier and acquired by Infineon to serve high-efficiency, high-reliability power conversion applications - particularly in telecom infrastructure, server PSUs, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFU9N20D supports 6.7A continuous drain current at T_C = 100°C with V_GS = 10V, per Absolute Maximum Ratings table on page 1 of the official datasheet. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 175°C maximum junction temperature specification.

Does the IRFU9N20D have a specified gate threshold voltage range?

Yes - V_GS(th) is specified from 3.0V to 5.5V at V_DS = V_GS and I_D = 250µA. This range confirms consistent enhancement-mode behavior across production lots and enables reliable logic-level gate drive compatibility when paired with 5V microcontrollers or dedicated gate drivers.

Can the IRFU9N20D be used in synchronous rectification applications?

Yes - its body diode exhibits 130ns reverse recovery time and 560nC Q_rr at I_F = 5.6A, enabling use as a synchronous rectifier in flyback and forward converters. However, external gate control is required since it lacks integrated driver circuitry; typical implementation uses a transformer-coupled or opto-isolated gate signal referenced to the source.

What is the thermal resistance from junction to ambient for PCB-mounted IRFU9N20D?

The datasheet specifies R_θJA = 50°C/W for PCB-mounted configuration (with minimum copper area). This value assumes 1in² (6.45cm²) of 2oz copper on the drain pad layer. Performance improves significantly with larger copper pours or thermal vias - actual R_θJA can reach ~25°C/W with optimized layout, enabling higher power density.

IRFU9N20D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU9N20D FAQ

1.How can I place an order for IRFU9N20D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU9N20D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU9N20D reliable?

The price and inventory of IRFU9N20D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU9N20D is usually 5 days.

3.What payment methods are accepted for IRFU9N20D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU9N20D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU9N20D?

IRFU9N20D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU9N20D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU9N20D?

For technical support, including IRFU9N20D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU9N20D requirements.

6.How does Aetrix verify that IRFU9N20D is sourced from the original manufacturer or authorized distributors?

All IRFU9N20D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU9N20D meets industry standards.

7.What is the process for return or replacement of IRFU9N20D?

All IRFU9N20D units undergo pre-shipment inspection (PSI). If there is an issue with IRFU9N20D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU9N20D part is unused and in its original packaging.

Return procedure for IRFU9N20D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…