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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI80N10L

Name: SPI80N10L
Brand: Infineon Technologies
SKU: SPI80N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI80N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI80N10L.pdf

Description:: MOSFET N-CH 100V 80A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,820

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Product details

Overview

SPI80N10L from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET rated for 100 V drain-source voltage, 14 mΩ R_DS(on) at V_GS = 10 V and I_D = 58 A, and 80 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C - deployed in high-current DC-DC primary-side switching and motor phase-leg drivers.

For engineers reviewing the SPI80N10L datasheet, SPI80N10L pinout, SPI80N10L application, or SPI80N10L equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (700 mJ), thermal resistance (R_thJC = 0.6 K/W), and TO-262-3-1 package compatibility with high-power PCB heatsinking.

Technical Context

This MOSFET uses Infineon's SIPMOS® trench-gate technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V). Its 100 V V_(BR)DSS supports 48 V industrial bus and 24 V automotive systems with margin, while the 700 mJ E_AS enables robustness against inductive switching transients.

The device integrates a fast-recovery body diode (t_rr = 95–140 ns, Q_rr = 330–500 nC) and exhibits low gate charge (Q_g = 160–240 nC), supporting efficient hard-switching at frequencies up to 100 kHz in synchronous rectification and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V nominal bus with ≥2× overvoltage margin for surge and flyback spikes
R_DS(on) @ V_GS = 10 V	14 mΩ max - enables ≤1.1 W conduction loss at 80 A, critical for thermal management in compact enclosures
I_D continuous @ T_C = 25 °C	80 A - defines maximum steady-state current with external heatsink at ambient case temperature
E_AS	700 mJ - withstands single inductive energy dump without failure, e.g., motor phase short-circuit events
dv/dt rating	6 kV/µs - prevents spurious turn-on during fast voltage transients in high-noise motor drives
T_j max	175 °C - allows operation in sealed industrial enclosures with limited airflow and high ambient temperatures
Q_g	160–240 nC - determines gate driver power requirement and switching speed trade-off in PWM control

Pinout & Package

Package: PG-TO262-3-1 - surface-mount variant of TO-220 with isolated drain tab, optimized for automated assembly and high-current PCB copper planes.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to exposed metal tab; must be soldered to ≥6 cm² copper pour for thermal and current handling
Source	Reference node for gate drive and current return	Low-inductance connection point for shunt sensing and gate driver ground reference
Gate	Control terminal for channel modulation	High-impedance input requiring <20 V absolute max; sensitive to ESD and ringing without proper RC snubbing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting
Avalanche-rated	Guaranteed single-pulse ruggedness to 700 mJ - eliminates need for external clamping in many inductive loads
High dv/dt immunity	6 kV/µs rating - suppresses false triggering in noisy half-bridge and motor phase-leg environments
Enhanced body diode	t_rr = 95–140 ns, Q_rr = 330–500 nC - reduces switching losses and voltage overshoot in synchronous rectification
Thermal performance	R_thJC = 0.6 K/W - enables >200 W dissipation with modest heatsink, critical for space-constrained power stages

Applications

Motor Drive Phase Leg

Industrial DC-DC Primary Switch

Use Scenario: High-current BLDC motor inverter stage operating at 48 V bus with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge, conducting peak currents up to 320 A pulsed.

Use Value: 14 mΩ R_DS(on) minimizes I²R losses during 80 A continuous conduction; 175 °C rating sustains operation under forced-air-limited enclosure conditions.

Use Scenario: 1 kW isolated forward converter in factory automation power supply.

IC Role / Device Role / Timing Role: Primary-side switching transistor driven by UC3845-based controller at 100 kHz.

Use Value: 700 mJ E_AS absorbs leakage inductance energy without snubber; 6 kV/µs dv/dt rating prevents shoot-through during transformer reset.

UPS Inverter Output Stage

EV Onboard Charger AC-DC Front End

Use Scenario: 3 kVA online UPS delivering clean sine-wave output via full-bridge inverter.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge output stage, switching bidirectionally.

Use Value: Fast body diode (t_rr < 140 ns) enables efficient freewheeling during dead-time; 80 A I_D supports 200% overload for 30 s.

Use Scenario: 6.6 kW PFC + LLC stage in electric vehicle onboard charger.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC front-end.

Use Value: Low Q_g (160–240 nC) reduces gate driver losses at 65 kHz; R_DS(on) stable over −55 to +175 °C ensures consistent efficiency across vehicle thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 12.5 mΩ @ 10 V, but V_GS(th) = 2.0–4.0 V - less reliable logic-level turn-on at 3.3 V	Lacks specified avalanche rating and dv/dt immunity - requires external clamping in inductive loads	Prefer when lower R_DS(on) is prioritized and gate drive is ≥5 V; avoid in 3.3 V MCU-controlled designs
IRF3205	R_DS(on) = 8.0 mΩ @ 10 V, but V_GS(th) = 2.0–4.0 V and no avalanche rating - higher risk of failure under transient stress	Higher Q_g (140 nC typical) increases gate drive power; no guaranteed dv/dt rating	Choose only for cost-sensitive, non-critical 24 V applications with robust gate drive and minimal inductive stress

Compared with STP80NF10 and IRF3205, SPI80N10L uniquely combines guaranteed avalanche ruggedness, 6 kV/µs dv/dt immunity, and true logic-level operation down to 4.5 V - making it the preferred choice for industrial motor drives and high-reliability DC-DC converters where transient robustness is non-negotiable.

Availability

SPI80N10L is available at Aetrix Electronics and suitable for motor drive phase legs, industrial DC-DC primary switches, and UPS inverter output stages requiring stable component supply and long-term lifecycle support.

Supply support for SPI80N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

SPI80N10L belongs to the SIPMOS® logic-level power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum gate-source voltage for SPI80N10L?

The absolute maximum gate-source voltage is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to +10 V to +15 V during switching and held at 0 V when off. The device's logic-level threshold (1.2–2.0 V) allows safe use with 3.3 V or 5 V controllers, but overshoot suppression via Zener clamping is recommended in noisy environments.

Does SPI80N10L require a heatsink in standard operation?

Yes - even at 58 A continuous current, junction-to-case thermal resistance is 0.6 K/W, meaning >35 W dissipation at full load. Without a heatsink, junction temperature exceeds 175 °C within seconds. A minimum 6 cm² copper pour on FR4 PCB is required per datasheet; for sustained 80 A operation, an external aluminum heatsink with thermal interface material is mandatory.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has t_rr = 95–140 ns and V_SD = 0.9–1.3 V at 80 A, which is slower and higher-V_F than most 100 V Schottkys. However, its monolithic integration eliminates layout parasitics and enables precise timing control in synchronous rectification. For ultra-low-loss designs, external Schottky parallel placement is possible but adds complexity and cost.

Can SPI80N10L replace SPP80N10L in existing designs?

Yes - SPI80N10L and SPP80N10L share identical electrical specifications, thermal characteristics, and pinout, differing only in package: SPI80N10L uses PG-TO262-3-1 (surface-mount leadframe), while SPP80N10L uses PG-TO220-3-1 (through-hole). Mechanical mounting and PCB footprint differ, but electrical behavior, gate drive requirements, and thermal derating curves are fully interchangeable.

SPI80N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4540 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI80N10L FAQ

1.How can I place an order for SPI80N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI80N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI80N10L reliable?

The price and inventory of SPI80N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI80N10L is usually 5 days.

3.What payment methods are accepted for SPI80N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI80N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI80N10L?

SPI80N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI80N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI80N10L?

For technical support, including SPI80N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI80N10L requirements.

6.How does Aetrix verify that SPI80N10L is sourced from the original manufacturer or authorized distributors?

All SPI80N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI80N10L meets industry standards.

7.What is the process for return or replacement of SPI80N10L?

All SPI80N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPI80N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI80N10L part is unused and in its original packaging.

Return procedure for SPI80N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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