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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-20ETF12STRL-M3 DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division	4,721	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
DPF10I600APA PWR DIODE DISC-FRED TO-220AB / T IXYS	2,107	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-A5PX6006L-N3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	2,369	RFQ	Datasheet	FRED Pt® G5	TO-247-3	Tube	Active	Standard	600 V	60A	2.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	46 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-A5PH6006L-N3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	3,528	RFQ	Datasheet	FRED Pt® G5	TO-247-3	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
WNSC6D106506Q WNSC6D10650/TO-220AC/STANDARD MA WeEn Semiconductors	8,531	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.4 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
WNSC6D10650B6J WNSC6D10650B/TO263/REEL 13" Q1/T WeEn Semiconductors	6,070	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
WNSC6D10650X6Q WNSC6D10650X/TO220F-2L/STANDARD WeEn Semiconductors	2,760	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
DSS16-01AS-TRL DIODE SCHOTTKY 100V 16A TO263AA IXYS	9,590	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	100 V	16A	790 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
CRNB25-1200PT DIODE GP 1.2KV 15.9A TO220AB Sensata-Crydom	5,670	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	1200 V	15.9A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-220AB	-40°C ~ 125°C
TPAU3D S1G DIODE AVALANCHE 200V 3A TO277A Taiwan Semiconductor Corporation	5,582	RFQ	-	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Avalanche	200 V	3A	1.88 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 200 V	60pF @ 4V, 1MHz	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
TPAU3G S1G DIODE AVALANCHE 400V 3A TO277A Taiwan Semiconductor Corporation	8,898	RFQ	-	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Avalanche	400 V	3A	1.88 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	-	-	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
VS-STPS30L60CW-N3 DIODE SCHOTTKY 60V 30A TO247AC Vishay General Semiconductor - Diodes Division	9,747	RFQ	Datasheet	-	TO-247-3	Tube	Active	Schottky	60 V	30A	800 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	480 µA @ 60 V	-	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
IDK05G65C5XTMA2 DIODE SIL CARB 650V 5A TO263-2 Infineon Technologies	4,039	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	830 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
SD200SA30B.T2 DIODE SCHOTTKY 30V 60A DIE SMC Diode Solutions	4,957	RFQ	Datasheet	-	Die	Tray	Active	Schottky	30 V	60A	530 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 30 V	3300pF @ 5V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 150°C
SD200SA60B.T2 DIODE SCHOTTKY 60V 60A DIE SMC Diode Solutions	2,666	RFQ	Datasheet	-	Die	Tray	Active	Schottky	60 V	60A	680 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 60 V	2400pF @ 5V, 1MHz	-	-	Surface Mount	Die	-55°C ~ 150°C
BYC30W-600PT2-AQ BYC30W-600PT2-A/TO247-2L/STANDAR WeEn Semiconductors	4,460	RFQ	-	-	TO-247-2	Tube	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
VS-E5PX7606L-N3 DIODE GEN PURP 600V 75A TO247AD Vishay General Semiconductor - Diodes Division	4,301	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	75A	2.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	96 ns	25 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
VS-8EWS16STRL-M3 DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division	6,127	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-55°C ~ 150°C
VS-8EWS16STRR-M3 DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division	7,734	RFQ	Datasheet	FRED Pt®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
ISL9R860S3ST DIODE GEN PURP 600V 8A D2PAK onsemi	2,290	RFQ	Datasheet	Stealth™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Avalanche	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

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