Infineon Technologies IDK05G65C5XTMA2

Overview

IDK05G65C5XTMA2 from Infineon is a 650 V, 5 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 1.5–2.2 V forward voltage (5 A, 25–150°C), 8 nC capacitive charge at 400 V, and 1.7–2.7 K/W junction-to-case thermal resistance. It operates up to 175°C junction temperature and is optimized for high-frequency PFC stages in industrial SMPS.

For engineers reviewing the IDK05G65C5XTMA2 datasheet, IDK05G65C5XTMA2 pinout, IDK05G65C5XTMA2 application, or IDK05G65C5XTMA2 equivalent, key selection criteria include its SiC-specific zero-recovery behavior, temperature-stable switching, surge current rating of 46 A (10 ms), and compatibility with 650 V CoolMOS™ half-bridges in compact, high-efficiency power converters.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or temperature-dependent switching delay.

The device is rated for 650 V repetitive peak reverse voltage and supports continuous forward current up to 5 A at case temperatures below 145°C. Its dv/dt ruggedness of 100 V/ns and 10.4 A²s i²t rating under 10 ms surge ensure robustness in hard-switching topologies like boost PFC and solar inverter DC-link freewheeling.

Key Specifications

Pinout & Package

PG-TO263-2 (D²PAK) package with isolated tab; cathode connected to exposed metal pad (Pin 1), anode to lead (Pin 2); Pin 3 not assigned.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05065E and STPSC5H065DL, IDK05G65C5XTMA2 delivers superior thermal performance (1.7 K/W min RthJC), highest surge robustness (46 A), and JEDEC-qualified reliability-making it optimal for mission-critical industrial PFC and inverter designs where long-term stability at elevated temperature is mandatory.

Availability

IDK05G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link, and uninterruptible power supply applications requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDK05G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon carbide and gallium nitride technologies.

IDK05G65C5XTMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDK05G65C5XTMA2 supports continuous forward current up to 5 A only when case temperature remains below 145°C, as specified in Table 3 of the final datasheet. Exceeding this limit risks thermal runaway due to increased reverse leakage, even though the junction can withstand 175°C. Derating curves in Figure 7 confirm that at TC = 150°C, IF must be reduced to ≤4.2 A to maintain safe junction temperature.

Does this diode require a gate driver or external control signal?

No, the IDK05G65C5XTMA2 is a passive uncontrolled diode with no gate terminal or control interface. It conducts automatically when anode voltage exceeds cathode voltage by ≥1.5 V, and blocks when reverse biased. Its zero-recovery behavior eliminates need for timing coordination with switch drivers-unlike active silicon carbide MOSFETs or IGBTs.

Can it replace a standard silicon rectifier in an existing 600 V design?

Yes, but with critical layout adjustments: the PG-TO263-2 footprint matches many Si TO-263 rectifiers, yet its lower VF and zero Qrr reduce switching stress on upstream MOSFETs. However, its higher dv/dt immunity (100 V/ns) may expose parasitic oscillations previously damped by Si diode recovery-requiring review of gate drive loop inductance and snubber placement.

Is avalanche energy rating specified for this part?

Yes-the datasheet states all devices are tested under avalanche conditions for 10 ms, and the i²t rating is explicitly provided: 10.4 A²s at TC = 25°C (Table 3). This quantifies single-pulse avalanche energy handling capability, confirming suitability for inductive load switching and fault-tolerant PFC designs where brief overvoltage events occur.