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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH7936TRPBFMOSFET N-CH 30V 20A/54A 8PQFN Infineon Technologies |
9,218 | 0.00 |
|
Datasheet |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26 nC @ 4.5 V | ±20V | 2360 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IRFR9014NMOSFET P-CH 60V 5.1A DPAK Infineon Technologies |
7,037 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
SPD06N60C3ATMA1MOSFET N-CH 600V 6.2A TO252-3 Infineon Technologies |
5,186 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IRF5803D2TRMOSFET P-CH 40V 3.4A 8SO Infineon Technologies |
9,202 | 0.00 |
|
Datasheet |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
AUIRFR3504TRLMOSFET N-CH 40V 56A DPAK Infineon Technologies |
6,167 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IRLR3715TRMOSFET N-CH 20V 54A DPAK Infineon Technologies |
9,706 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17 nC @ 4.5 V | ±20V | 1060 pF @ 10 V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSP171PL6327HTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
3,729 | 0.00 |
|
Datasheet |
SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
|
BSC889N03MSGATMA1MOSFET N-CH 30V 12A 44A TDSON Infineon Technologies |
8,430 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
SPU07N60S5MOSFET N-CH 600V 7.3A TO251-3 Infineon Technologies |
4,778 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
|
IRL7833PBFMOSFET N-CH 30V 150A TO220AB Infineon Technologies |
3,486 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47 nC @ 4.5 V | ±20V | 4170 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
