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Infineon Technologies AUIRFR3504TRL
- Part No.:
- AUIRFR3504TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AUIRFR3504TRL.pdf
- Description:
- MOSFET N-CH 40V 56A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,167
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Product details
Overview
AUIRFR3504 from Infineon is an automotive-grade N-channel D-Pak HEXFET® Power MOSFET with 40 V V(BR)DSS, 7.8 mΩ typ. RDS(on) at VGS = 10 V and ID = 30 A, 175°C maximum junction temperature, and fully rated repetitive avalanche capability up to TJmax. It serves as a high-efficiency main or synchronous rectifier switch in DC-DC converters, motor drivers, and load switches for 12 V automotive systems.
For engineers reviewing the AUIRFR3504 datasheet, AUIRFR3504 pinout, AUIRFR3504 application, or AUIRFR3504 equivalent, key selection criteria include package-limited 56 A continuous drain current, 48 nC total gate charge, 1.09 °C/W junction-to-case thermal resistance, and body diode recovery performance (trr = 53 ns, Qrr = 86 nC) critical for hard-switched topologies.
Technical Context
This MOSFET employs Infineon's Stripe Planar HEXFET architecture optimized for low RDS(on) per silicon area and robust avalanche ruggedness. Its gate threshold voltage (2.0–4.0 V) enables direct drive from standard 3.3 V/5 V logic controllers, while fast switching (td(on) = 11 ns, tf = 22 ns) supports high-frequency operation up to 500 kHz in buck converters.
The device integrates a monolithic p-n body diode with 1.3 V forward voltage at 30 A and 25°C, and is characterized for unclamped inductive switching with EAS = 480 mJ (tested) and EAR = 240 mJ (thermally limited). Thermal design must account for RθJA = 50 °C/W on 1"² FR-4 PCB and linear derating of 0.92 W/°C above 25°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Withstands up to 40 V drain-source blocking voltage before avalanche conduction begins. |
| RDS(on) typ. | 7.8 mΩ @ VGS = 10 V, ID = 30 A - Enables <1.5 W conduction loss at 50 A in high-current automotive loads. |
| ID (Package Limited) | 56 A @ TC = 25°C - Maximum continuous current constrained by D-Pak thermal limits, not silicon. |
| Qg | 48 nC (typ.) - Determines gate driver power requirement and switching speed in hard-switched circuits. |
| EAS (Tested) | 480 mJ - 100% production-tested single-pulse avalanche energy, supporting reliable unclamped inductive turn-off. |
| trr / Qrr | 53 ns / 86 nC - Defines body diode reverse recovery behavior critical for synchronous rectification efficiency. |
| TJ max | +175°C - Enables operation in under-hood environments without derating at ambient temperatures up to 125°C. |
Pinout & Package
Supplied in industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal transfer. Pin assignment follows standard G-S-D layout: Gate (Pin 1), Source (Pin 2), Drain (Pin 3, tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (Pin 1) | Control input | Receives gate drive signal; requires ≤±20 V rating and low-impedance drive due to 48 nC Qg. |
| Source (Pin 2) | Reference node | Serves as return path for load current and gate drive reference; connects to PCB ground plane for noise immunity. |
| Drain (Pin 3 / Tab) | Power output | High-current path to load; tab must be soldered to large copper pour for thermal management (RθJC = 1.09 °C/W). |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified for engine control units, transmission modules, and ADAS power stages. |
| Fully avalanche rated | Repetitive avalanche allowed up to TJmax with validated EAS = 480 mJ (tested) and EAR = 240 mJ (thermal limit). |
| Low RDS(on) density | 7.8 mΩ typ. at 10 V drive enables compact 12 V battery-fed motor drives with <2 W conduction loss at 40 A. |
| Fast switching | td(on)/tf = 11 ns/22 ns supports >300 kHz PWM in automotive DC-DC converters without excessive switching loss. |
| High-temperature operation | Rated for continuous operation at TJ = 175°C, enabling placement near heat sources in power distribution modules. |
Applications
| Engine Start-Stop System | Automotive DC-DC Converter |
|---|---|
Use Scenario: Controls battery-to-bus power delivery during engine cranking and restart cycles in 12 V micro-hybrid vehicles. IC Role / Device Role / Timing Role: High-side load switch managing bidirectional energy flow between starter battery and vehicle electrical system. Use Value: 56 A package-limited current and 480 mJ tested avalanche energy ensure reliable operation during repeated cranking surges without thermal runaway. | Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter powering infotainment and telematics ECUs. IC Role / Device Role / Timing Role: Low-side switching element operating at 250–500 kHz with body diode conducting freewheeling current. Use Value: 53 ns trr and 86 nC Qrr minimize reverse recovery losses, improving conversion efficiency by ≥1.2% versus standard MOSFETs. |
| Electric Power Steering (EPS) | Body Control Module (BCM) Load Switch |
Use Scenario: Half-bridge high-side switch driving 12 V brushed DC motors in steering assist actuators. IC Role / Device Role / Timing Role: Fast-switching power stage subjected to PWM duty cycling and inductive kickback during torque transients. Use Value: 175°C TJ max and 1.09 °C/W RθJC allow sustained 45 A peak current without external heatsink in space-constrained EPS housings. | Use Scenario: Solid-state replacement for mechanical relays controlling lighting, HVAC, and window lift functions. IC Role / Device Role / Timing Role: Low-RDS(on) load switch with integrated avalanche protection for inductive load disconnection. Use Value: 9.2 mΩ max. RDS(on) limits resistive heating to <2.5 W at 50 A, eliminating relay coil wear and contact arcing failures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N4LH6 | 40 V, 1.2 mΩ RDS(on), PowerFLAT 5x6 package, lower Qg (35 nC), but only 150°C TJ max. | Limited to under-hood ambient ≤105°C; unsuitable for high-temperature EPS or starter applications. | Select when ultra-low RDS(on) and compact footprint outweigh thermal ruggedness requirements. |
| IRF3205PbF | 55 V, 8.0 mΩ RDS(on), TO-220 package, 175°C rated, but higher Qg (71 nC) and no AEC-Q101 certification. | Not qualified for automotive safety-critical systems; requires external avalanche snubbing in inductive loads. | Select for cost-sensitive industrial DC-DC designs where AEC-Q101 compliance is not mandated. |
Compared with STL120N4LH6 and IRF3205PbF, the AUIRFR3504 uniquely balances AEC-Q101 qualification, 175°C operation, 480 mJ tested avalanche energy, and D-Pak manufacturability-making it the preferred choice for thermally demanding, safety-compliant automotive power stages.
Availability
AUIRFR3504 is available at Aetrix Electronics and suitable for engine start-stop systems, electric power steering modules, automotive DC-DC converters, and body control module load switching requiring stable component supply across extended vehicle lifecycles.
Supply support for AUIRFR3504 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
The AUIRFR3504 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V boardnet power switching in harsh under-hood environments.
FAQ
What is the maximum continuous drain current for AUIRFR3504 at 100°C case temperature?
The AUIRFR3504 delivers 61 A continuous drain current at TC = 100°C and VGS = 10 V (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal de-rating from the 87 A rating at 25°C, governed by the device's RθJC = 1.09 °C/W and internal power dissipation limits.
Is AUIRFR3504 suitable for synchronous rectification in a 400 kHz buck converter?
Yes. With td(on) = 11 ns, tf = 22 ns, and Qg = 48 nC, the AUIRFR3504 supports efficient synchronous rectification at 400 kHz. Its 53 ns trr and 86 nC Qrr minimize body diode conduction loss, and the 7.8 mΩ RDS(on) ensures low conduction loss even at high RMS currents typical in such converters.
Does AUIRFR3504 require a gate resistor for safe operation in inductive switching?
A gate resistor is recommended to control dv/dt and prevent spurious turn-on from Miller coupling. For typical 12 V automotive gate drivers, a 6.8 Ω resistor is used in characterization (per Fig. 15 test conditions); values between 4.7 Ω and 10 Ω balance switching speed and EMI suppression in production designs.
How does the AUIRFR3504's avalanche rating compare to non-automotive equivalents?
The AUIRFR3504 is 100% production-tested to 480 mJ single-pulse avalanche energy (EAS), exceeding most commercial-grade MOSFETs. Its repetitive avalanche rating (EAR = 240 mJ) is validated up to TJmax = 175°C, whereas non-automotive parts like IRF3205PbF lack this guaranteed, tested ruggedness and formal qualification for unclamped inductive switching.
AUIRFR3504TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
AUIRFR3504TRL FAQ
1.How can I place an order for AUIRFR3504TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRFR3504TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRFR3504TRL reliable?
The price and inventory of AUIRFR3504TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFR3504TRL is usually 5 days.
3.What payment methods are accepted for AUIRFR3504TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFR3504TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRFR3504TRL?
AUIRFR3504TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRFR3504TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRFR3504TRL?
For technical support, including AUIRFR3504TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFR3504TRL requirements.
6.How does Aetrix verify that AUIRFR3504TRL is sourced from the original manufacturer or authorized distributors?
All AUIRFR3504TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFR3504TRL meets industry standards.
7.What is the process for return or replacement of AUIRFR3504TRL?
All AUIRFR3504TRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFR3504TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRFR3504TRL part is unused and in its original packaging.
Return procedure for AUIRFR3504TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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